• Bulletin of the Korean Chemical Society
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• v.25 no.7
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• pp.986-990
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• 2004

Condensation of salicylaldehyde $(2-HOC_6H_4C(O)H)$ with allylamine afforded the unsaturated salicylaldimine, $2-HOC_6H_4C(H)=NCH_2CH=CH_2$. Similar reactivity was observed with substituted salicylaldehydes. Further reaction of these Schiff bases with palladium acetate or $Na_2PdCl_4$ afforded complexes of the type $PdL_2$, where L = deprotonated Schiff base. The molecular structure of the parent salicylaldimine palladium complex $[trans-(2-OC_6H_4C(H)=NCH_2CH=CH_2)_2Pd]$ (1) was characterized by an X-ray diffraction study. Crystals of 1 were monoclinic, space group $P2_1/n,\;a\;=\;14.0005(9)\;{\AA},\;b\;=7.2964(5)\;{\AA},\;c\;=\;17.5103(12)\;{\AA},\;{\beta}\;=\;100.189(1)^{\circ}$, Z = 4. Analogous chemistry with 4-vinylaniline also gave novel palladium complexes containing a pendant styryl group. Crystals of $[trans-(2-HOC_6H_4C(H)=N-4-C_6H_4CH=CH_2)_2Pd]$ (4) were monoclinic, space group $P2_1/c$, a = 13.7710(14) ${\AA}$, b = 11.0348(11) ${\AA}$, c = 7.8192(8) ${\AA}$, ${\beta}\;=\;98.817(2)^{\circ}$, Z = 2.

• Journal of the Korean Ceramic Society
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• v.24 no.5
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• pp.453-460
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• 1987

β'-sialon(Z=2.7) specimens with <30%wt. graphite as a reducing agent were decomposed at 1350°up to 1,450℃ under the atmosphere of 90% N2-10%H2. The decomposition of β'-sialon was calculated from the change in Z-value, and the formation of new minerals was identified from X-ray diffraction patterns. The decomposition reactions of sialon were considered to yield a stable sialon close to β-silicon nitride and some aluminum compounds according to the following equations; β'-sialon(s)＋C(s)＋N2(g)→β2-sialon(metastable)＋β3-sialon(stalbe phase) β2-sialon(s)＋C(s)＋N2(g)→β3-sialon(s)＋AlN(s)＋α-Al2O3(s)＋15R(s)＋SiO(g)＋Al2O(g)＋CO(g) Z-value; β2( 3.5)>β'( 2.7)>β3( 0.5) The decomposition rate of sialon was controlled by two mechanisms ; One was characterized by the interface area of contact, corresponding to an apparent activation energy of 50.5Kcal/mol in the initial stage, and the other by the diffusion, corresponding to that of 104.3Kcal/mol in the final stage of the decomposition.

• BMB Reports
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• v.44 no.2
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• pp.118-122
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• 2011

Most widely used secondary structure assignment methods such as DSSP identify structural elements based on N-H and C=O hydrogen bonding patterns from X-ray or NMR-determined coordinates. Secondary structure assignment algorithms using limited $C{\alpha}$ information have been under development as well, but their accuracy is only ~80% compared to DSSP. We have hereby developed SABA (Secondary Structure Assignment Program Based on only Alpha Carbons) with ~90% accuracy. SABA defines a novel geometrical parameter, termed a pseudo center, which is the midpoint of two continuous $C{\alpha}s$. SABA is capable of identifying $\alpha$-helices, $3_{10}$-helices, and $\beta$-strands with high accuracy by using cut-off criteria on distances and dihedral angles between two or more pseudo centers. In addition to assigning secondary structures to $C{\alpha}$-only structures, algorithms using limited $C{\alpha}$ information with high accuracy have the potential to enhance the speed of calculations for high capacity structure comparison.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1449-1450
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• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 (vol.%) mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS) under argon atmosphere at 50MPa(P50) and 60MPa(P60) pressure. The relative density, 94.13% of P60 sample was lower than that, 94.75% of P50 sample. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The trend of flexural strength of SiC-$ZrB_2$ composites were in accordance with the relative density. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance in the temperature range from $25^{\circ}C$ to $500^{\circ}C$, and electrical resistivity of P50 and P60 sample were $6.75{\times}10^{-4}$ and $7.22{\times}10^{-4}{\Omega}{\cdot}cm$ at room temperature, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.10
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• pp.1317-1321
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• 2018

PVDF as a semicrystal polymer, having a structure with C-F dipole moments, has been widely investigated because of its excellent chemical stability, mechanical strength, and ferroelectricity. In this study, ferroelectic ${\beta}$ type - PVDF layer was prepared by using an electrostatic spray deposition method and the effects of the addition of Ni-nitrate in precursor solution on the properties of PVDF layer were evaluated. Crystallinity and chemical structure of the PVDF layer were analyzed by a X-ray diffraction and Fourier Transform Infrared Spectrophotometer. Surface structure and fractured cross section of the layer were examined by a field emission-scanning electron microscope. LCR meter was used to obtain the dielectric properties of the layer. As the addition of an inorganic metal salt in PVDF sol, ${\beta}$ type - PVDF crystals were appeared in the hydrated metal salts doped-layer since the strong hydrogen bondings $(O-H{\cdots}F-C)_n$ due to high polarity of OH- were formed.

• Elastomers and Composites
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• v.31 no.5
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• pp.335-340
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• 1996

In order to look into the internal structure and the properties in the silicone rubbers added reinforcing fillers; silica $additives(O{\sim}140phr)$, and to examine the behavior of charged particles, the properties of thermally stimulated current(TSC) and X-Ray diffraction are investigated, respectively. And then, from the TSC which are formed by applying the electric field of $2{\sim}5kV/mm$ to specimen at the temperature range from -150 to $260^{\circ}C$, the results are as follwing: In the case of non-filled specimen, four peaks of ${\delta},\;{\gamma},\;{\beta}\;and\;{\alpha}$ are obtained at the temperature of $-120^{\circ}C,\;-60^{\circ}C,\;20^{\circ}C\;and\;130^{\circ}C$, respectively and the case of filled specimen, three peaks of ${\delta},\;{\alpha}_2\;and\;{\alpha}_1$ are observed at the temperature of $-120^{\circ}C,\;80^{\circ}C\;and\;130^{\circ}C$, respectively. The origins of these peaks are that, the ${\delta}$ peak seems to the result from the contribution of side chain methyl radical, and the ${\gamma}$ peak from the depolarization of space charge polarization owing to be added impurity during manufacturing specimens, and the ${\beta}$ peak from the orientation of $Si-CH_3$ dipole, and the ${\alpha}_2$ near the temperature of $80^{\circ}C$ from hydroxyl in carboxylic radical, and finally, the ${\alpha}_1$ peak near the temperature of $130^{\circ}C$ from carboxyl acid that is formed by the thermal oxidation of high temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.233-239
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• 1998

SiC thin films were deposited by chemical vapor deposition method using tetramethylsilane (TMS) and hexamethyldisilane (HMDS). The chamber pressure during the deposition was kept at about 1 torr. Precursor was transported to the reaction chamber by $H_2$gas and SiC deposition was carried out at the reaction temperature of $1200^{\circ}C$. Si-wafer masked with tantalum and MgO single crystal covered with platinum and molybdenum were used as substrates. The selectivity of SiC deposition was observed by comparing the microstructure between metal (Ta, Pt, and Mo) surfaces and substrate surfaces (Si and MgO). The deposited films were identified as the $\beta-SiC$ phase by X-ray diffraction pattern. Also, the deposition -behavior of SiC on each surface was investigated by the scanning electron microscope analysis.

• Journal of the Korean Ceramic Society
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• v.22 no.4
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• pp.33-39
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• 1985

A composition containing a-$Si_3N_4$ with 5w/0 $Y_2O_3$ and 4w/0 $Al_2O_3$ was hot-pressed at 1, $650^{\circ}C$ and 350kg/$cm^2$ for 1.5hrs and specimens of the same composition were pressureless-sintered at 1, 75$0^{\circ}C$ for 1.5 and 5hrs. By X-ray diffraction it was found that hot-pressed specimens were consisted of $\alpha$-and $\beta$-$Si_3N_4$ and sintered specimens were consisted of $\beta$-$Si_3N_4$ and $Si_3N-4Y_2O_3$ which was crystallized out from the grainboundary phase. The 5-hr sintered specimens had higher degree of crystallization than the 1.5 hr sintered specimens. Among these three different specimens the 5-hr sintered specimens showed the highest strength by hot MOR test at 1, 00$0^{\circ}C$. The SPT diagram for the 5-hr sintered $Si_3N_4$ was constructed by measurements of the stress rate dependence of fracture strength.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.275-285
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• 1996

The effect of heat-treatment on catalytic crystallization in $LI_2O-Al_2O_3-SiO_2$ glass system over its glass transition temperature was investigated. Glass composition $4Li_2O{cdot}22AL_2O_3{cdot}66SiO_2{cdot}2TiO_2{cdot}2.5ZrO_2{cdot}1.5P_2O_5{cdot}1.0Na_2O{cdot}1.0As_2O_3$ (wt%) was selected and heat-treated at different heating conditions to obtain transparent glass-ceramic. Nucleation and crystallization behaviour of this composition were estimated by differential thermal analysis (DTA) and X-ray diffractometer (XRD) and its thermal expansion coefficients were measured by Dilatometer. As a result, glass transition temperature was $730^{\circ}C$ and two maximum nucleation temperatures were estimated at $730^{\circ}C$ and 82$0^{\circ}C$ using JMA(Johson-Mehl-Avrami) equation by DTA. $ZrTiO_4$ $\beta$-Quartz solid solution and $\beta$-Spodumene crystals were identified by XRD. The optimum crystallization temperature was 92$0^{\circ}C$ and three step heating schedule was expected to be useful to obtain transparent glass-ceramic.

• The Korean Journal of Ceramics
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• v.5 no.3
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• pp.224-229
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• 1999

The preparation and toughening of SiC-AIN solid solution from powder mixtures of $\beta$-SiC, AIN and $\alpha$-SiC by hot-pressing were studied in the 1870 to $2030^{\circ}C$ temperature range. The reaction of AIN and $\beta$-SiC(3C) powders causing transformation to the 2H(wurtzite) structure appeared to depend on hot-pressing temperatures and an additive of $\alpha$-SiC. For the composition of 49wt% SiC with 2 wt% $\alpha$-SiC and 47.5 wt% AIN47.5wt% SiC with 5 wt % $\alpha$-SiC at 203$0^{\circ}C$ for 1 h, th complete solid solutions with a single phase of 2H could be obtained. The appreciable amount of $\alpha$-SiC could develop the columnar inter-grains of 4H phase and the stable 2H phase with the relatively uniform composition and grain size distributions. The effect of $\alpha$-SiC on the phases present and compositional microstructures with columnar inter-grains was invetigated using X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The fracture toughness and Vickers hardness of the hot-pressed solid solutions wre examined by the indentation-fracture-test method.