• 전자공학회논문지A
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• 제33A권6호
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• pp.144-150
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• 1996

The purpose of this paper is to develop a simulation program to predict resist prifile in electron-beam lithography, where the main issue is proximity effect. The simualtion program composes of monte-carlo simulation, exposure simulation and development simulation. In nonte-carlo simulation, the absorbed energy in the resist is calculated when one electron is incident into resist, using hybrid model on the basis of the rutherford differential scattering cross section and moller theory. In exposure simulation, the absorbed energy in the resist is calculated when electrons are incident in exposure pattern. In the program, the developed profile depending on time is obtained by string model. The 0.2$\mu$m and the 0.3$\mu$m line and space patterns are experimentally delineated and compared to the simulation results to check the relevance of the program.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2001년도 ICCAS
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• pp.161.6-161
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• 2001

Confocal scanning microscopy (CSM) has an important role as the three-dimensional profiler. An image distribution can be reconstructed by a correlation analysis of spots with the bandwidth of radio frequency. But it is a serious problem for the high performance to align the optical components. Especially, the parasitic motion of focus on the detector gives rise to the fatal distortion of an image profile named the extinction effect while using acousto-optical(AO) deflector. An image profile can be regenerated in CSM with many advantages of non-contact, high speed and high resolution comparatively. In addition to the axial response of the primary focus, the lateral movement of it gives a necessity of the unitary lens to the scanning system. While using the beam deflector, the pupil of beam may be fixed at the nominal position. Furthermore, the use of a deflector may result in ...

• 한국의학물리학회지:의학물리
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• 제13권3호
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• pp.129-134
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• 2002

방사선 수술시 예상되는 치료효과를 위해 종양에 미리 정의된 방사선량이 조사되도록 수술을 계획한다. 이러한 수술계획시 다양한 모양의 종양에 대해 수술 계획을 수행하는 것은 많은 시간과 숙련된 수술계획자가 요구된다. 최근 들어, 뛰어난 컴퓨터 기술의 발달로 컴퓨터를 이용한 수술계획 방법들이 많이 연구 발표되고 있으나 현재 대부분의 수술계획은 주로 시행착오를 통한 방법으로 이루어진다. 본 연구에서는 방사선 수술계획시 고려되는 많은 빔관련 변수들을 고려하고 다양한 형태의 종양들을 원통형으로 가정한 후 이 종양모델을 50％ 등선량 곡선내에 포함시킬수 있는 변수들을 찾아 이들을 비교 분석하였다. 수많은 변수들 중 본 연구에서 고려한 변수는 콜리메이터 크기, isocenter의 개수와 isocenter 간의 거리이고 이때 얻어진 선량분포는 Dose Volume Histogram(DVH)과 Dose Profile로 서로 비교하였다. 비교결과 우리가 가정한 50％ 등선량 곡선내에 종양모델을 포함시키기 위해서는 일정 개수 이상의 isocenter의 사용은 치료의 복잡성만을 증가시킬뿐 Dose Profile과 DVH에서의 변화는 눈에 뛰게 향상되지 않았다. 또한 같은 콜리메이터 크기로 같은 개수의 isoceter를 사용할 때 isocenter의 거리가 지름대비 1.0-1.2일 경우의 DVH와 Dose profile이 상대적으로 우수하게 나타났다.

• 비파괴검사학회지
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• 제30권6호
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• pp.569-577
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• 2010

Nonplanar surface geometries of components are frequently encountered in real ultrasonic inspection situations. Use of rigid array transducers can lead to beam defocusing and reduction of defect image quality due to the mismatch between the planar array and the changing surface. When a flexible array is used to fit the complex surface profile, the locations of array elements should be known to compute the delay time necessary for adaptive heam focusing. An alternative method is to employ the time reversal focusing technique that does not require a prior knowledge about the properties and structures of the specimen and the transducer. In this paper, a time reversal method is applied to simulate beam focusing of flexible arrays and imaging of point-like defects contained in specimens with nonplanar surface geometry. Quantitative comparisons are made for the performance of a number of array techniques in terms of the ability to focus and image three point-like reflectors positioned at regular intervals. The sinusoidal profile array studied here exhibits almost the same image quality as the flat, reference case.

• Steel and Composite Structures
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• 제4권4호
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• pp.303-315
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• 2004

Frame composed of concrete-filled steel tubular columns and I-shaped steel beam has been researched in order to development reasonable connection details. The present paper describes the results of an experimental program in four different connection details. The connection details considered include through-bolt between I-shaped steel beams and concrete-filled steel tubular columns and two details of welded connections. One of the welded connection details is stiffened by angles welded in the interior of the profile wall at the beam flange level. The specimens were tested in a cruciform loading arrangement with variable monotonic loading on the beams and constant compressive load on the column. For through-bolt details, the contribution of friction and bearing were investigated by embedding some of the bolts in the concrete. The results of the tests show that through-bolt connection details are very ductility and the bearing is not important to the behavior of these moment connections. The angles welded in the interior of the profile wall increase the strength and stiffness of the welded connection detail. In addition, the behavior curves of these connections are compared and some interesting conclusions are drawn. The results are summarized for the strength and stiffness of each connection.

• 한국진공학회지
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• 제12권S1호
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• pp.63-66
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• 2003

It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

• Journal of Information Display
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• 제3권4호
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• pp.8-12
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• 2002

We have carried out a simulation study on an e-beam addressed liquid crystal projection display in which the liquid crystal is switched by the electric field of the charge, produced by an electron beam, on the surface of the display. We calculated the electric field produced by the surface charge, the liquid crystal director configuration and the profile of the transmitted light. We studied the factors affecting the resolution of the display and the effect of pretilt angle on the performance of the display. The e-beam addressed liquid crystal projection display potentially has the advantages of high resolution and high brightness.

• 전자공학회논문지A
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• 제33A권7호
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• pp.198-204
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• 1996

Electron beam lithography is one of the importnat technologies which can delineate deep submicron patterns. REcently, electron beam lithography is being applied in delineating the critical layers of semiconductor device fabrication. In this paper, we present a development simulation program for electron beam lithography and study the development profiles of resist when resist is exposed by the electron beam. Experimentally, the development parameter of positive and negative resists are measured and the data is applied to input parameter of the simulation program. Also simulation results are compared of the process results in the view of resist profiles. As a result, for PMMA and SAL 601 resist, the trend of simulation to the values of process parameters agree with real process results very well, so that the process results can be predicted by the simulation.

• Radiation Oncology Journal
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• 제6권1호
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• pp.101-108
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• 1988

The beam characteristics and dosimetric measurements of the 10MV X-ray beam from a Mevatron KD linear accelerator are examined. The Percent Depth Dose (POD) table and the Tissue Maximum Ratio (TMR) table are taken from measurement as a function of the field size and the depth. The calculated TMR table from PDD table is compared with those from measurement. Other beam characteristics such as output factor, beam profile (including flatness, symmetry and penumbra), wedge, and the variation of Dmax are presented.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.25-33
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• 2007

A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.