• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.290.1-290.1
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• 2013

The electrical characterization of Au islands on TiO2 at nanometer scale (as a Schottky nanodiode) has been studied with conductive atomic force microscopy in ultra-high vacuum. The diverse sizes of the Au islands were formed by using self-assembled patterns on n-type TiO2 semiconductor film using the Langmuir-Blodgett process. Local conductance images showing the current flowing through the TiN coated AFM probe to the surface of the Au islands on TiO2 was simultaneously obtained with topography, while a positive sample bias is applied. The boundary of the Au islands revealed a higher current flow than that of the inner Au islands in current AFM images, with the forward bias presumably due to the surface plasmon resonance. The nanoscale Schottky barrier height of the Au/TiO2 Schottky nanodiode was obtained by fitting the I-V curve to the thermionic emission equation. The local resistance of the Au/TiO2 nanodiode appeared to be higher at the larger Au islands than at the smaller islands. The results suggest that conductive atomic force microscopy can be used to reveal the I-V characterization of metal size dependence and the electrical effects of surface plasmon on a metal-semiconductor Schottky diode at nanometer scale.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.586-591
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• 2019

This study describes the doping effect of $Yb_2O_3$ on microstructure, electrical and dielectric properties of $ZnO-V_2O_5-MnO_2-Nb_2O_5$ (ZVMN) ceramic semiconductors sintered at a temperature as low as $900^{\circ}C$. As the doping content of $Yb_2O_3$ increases, the ceramic density slightly increases from 5.50 to $5.54g/cm^3$; also, the average ZnO grain size is in the range of $5.3-5.6{\mu}m$. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of $Yb_2O_3$ is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% $Yb_2O_3$ reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of $2.46-7.41{\times}10^{17}cm^{-3}$ with increasing doping content of $Yb_2O_3$ and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of $Yb_2O_3$ reaches 0.1 mol%, whereas further doping increases it. The value of $tan{\delta}$ increases from 0.209 to 0.268 with the doping content of $Yb_2O_3$.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.53-58
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• 2010

In this study, we have investigated the effect of the ambient gases on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various ambient gases (Ar, $Ar+O_2$ and $Ar+H_2$) at $150^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm, respectively. All the samples show amorphous structure regardless of ambient gases. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$ while under $Ar+H_2$ atmosphere the electrical resistivity showed minimum value near 0.5sccm of $H_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made by configuration of IZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current densityvoltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Korean Journal of Materials Research
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• v.29 no.8
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• pp.463-468
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• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.

• Korean Journal of Materials Research
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• v.31 no.10
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• pp.539-545
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• 2021

The effect of Sm₂O₃ doping on the microstructure and electrical properties of the ZPCCA-based varistors is comprehensively investigated. The increase of doping content of Sm₂O₃ results in better densification (from 5.70 to 5.82 g/cm³) and smaller mean grain size (from 7.8 to 4.1 ㎛). The breakdown electric field increases significantly from 2568 to 6800 V/cm as the doping content of Sm₂O₃ increases. The doping of Sm₂O₃ remarkably improves the nonlinear properties (increasing from 23.9 to 91 in the nonlinear coefficient and decreasing from 35.2 to 0.2 µA/cm² in the leakage current density). Meanwhile, the doping of Sm₂O₃ reduces the donor concentration (the range of 2.73 × 10¹⁸ to 1.18 × 10¹⁸ cm^-3) of bulk grain and increases the barrier height (the range of 1.10 to 1.49 eV) at the grain boundary. The density of the interface states decreases in the range of of 5.31 × 10¹² to 4.08 × 10¹² cm^-2 with the increase of doping content of Sm₂O₃. The dielectric constant decreases from 1594.8 to 507.5 with the increase of doping content of Sm₂O₃.

• Journal of the Korean earth science society
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• v.42 no.6
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• pp.605-622
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• 2021

Seasonal forecasting has numerous socioeconomic benefits because it can be used for disaster mitigation. Therefore, it is necessary to diagnose and improve the seasonal forecast model. Moreover, the model performance is partly related to the ocean model. This study evaluated the hindcast performance in the upper ocean of the Global Seasonal Forecasting System version 5-Global Couple Configuration 2 (GloSea5-GC2) using a multivariable integrated evaluation method. The normalized potential temperature, salinity, zonal and meridional currents, and sea surface height anomalies were evaluated. Model performance was affected by the target month and was found to be better in the Pacific than in the Atlantic. An increase in lead time led to a decrease in overall model performance, along with decreases in interannual variability, pattern similarity, and root mean square vector deviation. Improving the performance for ocean currents is a more critical than enhancing the performance for other evaluated variables. The tropical Pacific showed the best accuracy in the surface layer, but a spring predictability barrier was present. At the depth of 301 m, the north Pacific and tropical Atlantic exhibited the best and worst accuracies, respectively. These findings provide fundamental evidence for the ocean forecasting performance of GloSea5.

• Journal of Forest and Environmental Science
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• v.38 no.2
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• pp.128-132
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• 2022

Wild boars (Sus scrofa) not only cause crop damage and human casualties, but also facilitate the spread of many infectious diseases in domestic animals and humans. To determine the efficiency of a fencing system in blocking the movement of wild boars, long-term monitoring was performed in a fenced area in Bukhansan National Park using camera traps. Upon monitoring for a period of 46 months, there was a 72.6% reduction in the number of wild boar appearances in the fence-enclosed area, compared to that in the unenclosed area. For 20 months after the fence installation, the blocking effect of the fence was effective enough to reduce the appearance of wild boars by 92.6% in the fence-enclosed area, compared to that in the unenclosed area. The blocking effect of the fence remained effective for 20 months after its installation, after which its effectiveness decreased. Maintaining a fence for a long time is likely to lead to habitat fragmentation. It can also block the movement of other wild animals, including the endangered species - the long-tailed goral. This study suggests a 20-month retention period for the fences installed to inhibit the movement of wild boars in wide forests such as Gangwon-do in South Korea. To identify how long the blocking effect of the fences lasts, further studies are needed focusing on the length and height of the fence, and the conditions of the ground surface.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.138-143
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• 2022

We analyzed the influence of post-annealing on Ga₂O₃/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga₂O₃) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga₂O₃ and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O₂-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga₂O₃ film. The O₂-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

• Korean Journal of Materials Research
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• v.34 no.6
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• pp.283-290
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• 2024

The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO₂ has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO₂ on RuO₂ with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO₂ was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10^-6 A/cm² at 1 V, and an EOT at the 0.5 nm level was achieved.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.32 no.2
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• pp.224-233
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• 1987

Most of the japonica rice varieties preferred for high eating quality are liable to lodging even under moderate rate of nitrogen application. This lodging liability has been a critical limit even for proper evaluation of physio-logical characteristics of those varieties exhibitable under higher nitrogen levels. Use of recent inhibitors of gibberellin biosynthesis such as ‘Pac1obutrazol’ may allow us to overcome this barrier. The responses of four high eating quality varieties to nitrogen application to the level of 150kg N per ha were evaluated with and without use of Paclobutrazol in comparison with a non-lodging, improved short japonica, Dongjin and a non-lodging, high yielding indica x japonica Milyang 23. The four were Damageum (the best eating quality in the 1930s), Nongrim 6 (the best in the 1960s), Chuchung (the best since 1970s), Koshihikari (the best in Japan since 1960s). As expected increased application of nitrogen increased plant height, length of the 3rd internode, and lodg-ing liability, being measured as culm breaking load, in all varieties tested and caused actual lodging in the fiel from the 50kg Nfha level in Damageum and Koshihikari and at the level of l50kg Nfha in Nongrim 6. Applica-tion of Pac1obutrazol (0.6%G) 15 days before heading reduced plant height, length of the 3rd internode and lodging liability being measured as culm breaking load in all varieties tested. However, the application of Pac1obutrazol during active tillering stage resulted in decreased culm breaking load in Damageum, Nongrim 6, and Koshihikari in spite of the decreased plant height and culm length as in the other varieties. Maximum yield was obtained with 100kg Nand 30kg Pac1obutrazol at 15 days before heading in Nongrim 6, 150kg N and 30kg Pac1obutrazol at 15 days before heading in Damageum, and 150kg N and 20kg Paclobutrazol at 20 days after transplanting plus 30kg Paclobutrazol at 15 days before heading in the variety Koshinhikari and Chuchung. Under a sensory evaluation of cooked rice, the four high eating quality varieties were not different in rank and Paclobutrazol treated rice was not distinguished from the untreated in eating quality.