• Journal of the Semiconductor & Display Technology
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• v.4 no.3 s.12
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• pp.5-9
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• 2005

The bonding structure of organic materials such as fluorinated amorphous carbon films was classified into two types due to the chemical shifts. The electrical properties of fluorinated amorphous carbon films also showed very different effect of two types notwithstanding a very little difference. Fluorinated amorphous carbon films with the cross-link break-age structure existed large leakage current resulting from effect of the electron tunneling. Increasing the cation due to the electron-deficient group increased the barrier height of the films with the cross-link amorphous structure, therefore the electric characteristic of the final materials with low dielectric constant was also improved. The lowest dielectric constant is 2.3 at the sample with the cross-link amorphous structure.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.67-72
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• 2005

The bonding structure of organic materials such as fluorinated amorphous carbon films was classified into two types due to the chemical shifts. The electrical properties of fluorinated amorphous carbon films also showed very different effect of two types notwithstanding a very little difference. Fluorinated amorphous carbon films with the cross-link breakage structure existed large leakage current resulting from effect of the electron tunneling. Increasing the cation due to the electron-deficient group increased the barrier height of the films with the cross-link amorphous structure, therefore the electric characteristic of the final materials with low dielectric constant was also improved. The lowest dielectric constant is 2.3 at the sample with the cross-link amorphous structure.

• Environmental Engineering Research
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• v.11 no.4
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• pp.201-207
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• 2006

A simple empirical model with good quantitative prediction of inter-particle and intra-particle distance in a cake layer with respect to ionic strength was developed. The model is an inverse length scale with functions of interaction energy and hydrodynamic factor and it explains that the inter-particle and intra-particle distance in a cake is directly related to the effective size of particles. Particle compressibility with respect to ionic strength was also predicted by the model. The model corroborated very well with experimental results of polystyrene microsphere latex particles microfiltation in a dead end operation. From the results of the model, specific cake resistance could be controlled by the same variables affecting the height of particle energy barrier described by the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory.

• ETRI Journal
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• v.32 no.1
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• pp.68-72
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• 2010

The coupling between the transverse and longitudinal components of the channel electron motion in NMOS devices leads to a reduction in the barrier height. Therefore, this study theoretically investigates the effects of the in-plane velocity of channel electrons on the capacitance-voltage characteristics of nano NMOS devices under inversion bias. Numerical calculation via a self-consistent solution to the coupled Schrodinger equation and Poisson equation is used in the investigation. The results demonstrate that such a coupling largely affects capacitance-voltage characteristic when the in-plane velocity of channel electrons is high. The ballistic transport ensures a high in-plane momentum. It suggests that such a coupling should be considered in the quantum capacitance-voltage modeling in ballistic transport devices.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.106-111
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• 1996

Schottky diodes are fabricated on laser annealed and unannealed polysilicon substrate and their electrical characteristics are studied and analyzed. Current of laser annealed devices are larger than that of unannealed devices because of grain growth, decrease of grain boundary and trap density, lowering of grain boundary barrier height, decrease of dopant segregation. At low forward bias (<0.7V), currents of unanealed devices are larger. Soft breakdown voltages of laser annealed devices are larger than that of unannealed devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.124-127
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• 2004

W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.

• Bulletin of the Korean Chemical Society
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• v.30 no.8
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• pp.1805-1810
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• 2009

The adsorptions of trimethygallium (TMG) and arsine (As$H_3$) on H/Si(100)-2x1 surface were theoretically investigated. In the case of TMG adsorption, methane loss reaction, surface methylation, hydrogen loss reaction and ring closing reaction channels were found. The mechanism of As$H_3$ adsorption on the surface was also identified. Among these, the methane loss reaction depositing –Ga(C$H_3)_2$ was found to be the major channel due to its low barrier height and the large exothermicity. The surface methylation reaction is the second most favorable channel. In contrast, arsine turned out to be less reactive on the surface, implying that Arsine surface reaction would be the rate limiting step in the overall ALD process.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.558-563
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• 2006

The electrical and dielectric properties of $ZnO-Pr_6O_{11}CoO-Cr_2O_3La_2O_3-based$ nonlinear resistors were investigated at different sintering temperatures in the range of $1230{\sim}1300^{|circ}C$. As the sintering temperature increased, the breakdown voltage decreased from 777.9 to 108.0V/mm, the nonlinear coefficient greatly decreased from 77.0 to 7.1, and the leakage current increased from $0.4{\mu}A\;to\;50.6{\mu}A$. On the other hand, the donor density from $0.90{\times}10^{18}\;to\;2.59{\times}10^{18}/cm^3$ and the barrier height decreased from 1.89 to 0.69 eV with increasing temperature. The dielectric dissipation factor increased from 0.0879 to 0.2839 for the increase of sintering temperature.

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.504-509
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• 2018

The influence of yttrium doping on varistor properties of zinc-vanadium-based ceramics was comprehensively investigated. The average grain size varied slightly between 5.2 and $5.5{\mu}m$ as the yttrium content increased; and similarly, the sintered density varied slightly between 5.47 and $5.51g/cm^3$. The threshold field exhibited a maximum value (5387 V/cm) when the yttrium content was 0.1 mol%. The highest nonlinear exponent (67) was obtained when the yttrium content was 0.05 mol%. The donor concentration increased in the range of $(2.46-5.56){\times}10^{17}cm^{-3}$ as the yttrium content increased, and the maximum barrier height was obtained (1.24 eV) when the yttrium content reached 0.05 mol%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.23-29
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• 2000

The agglomeration of titania particles with 30 nm in radii was simulated based on the colloidal stability. For surface potential increase from 4.5 to 16.8 mV the height of energy barrier increased. This tendency may explain the experimentally observed aggregation behavior where particles with smaller size and higher potential exhibited higher stability but form bigger and harder agglomerates with irregular shapes after drying.