• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.261-264
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• 1990

The specific contact resistance(SCR) of metal-semiconductor interface is an important design parameter for VLSI interconnecting technology. As the critical feature size of the integrated structures decrease, the physical size of ohmic contacts will also decrease and the series contact resistance will increase. Al-Si contacts on the annealing condition are studied. The propreties of the contacts depend considerably on the annealing procedures. Barrier height is measured from Capacitance-Voltage characteristics. The specific contact resistance are analyzed using a modified four point method.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2014.10a
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• pp.823-826
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• 2014

The weight of soundproof panels is an important consideration in the design of both panels and supporting structures. The soundproof panels in noise barriers have to carry their net weight in wet condition respectively the reduced weight and also the weight of the above installed panels in wet condition without showing any failing. In this study, a compression test and a flexural test were performed to determine the maximum vertical load which a wood plastic composites (WPC) panel can bear. In addition, the maximum loading number and height of WPC panels in a noise barrier were calculated for full, simple, and continuous support conditions.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.25-26
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• 2000

This paper deals with the effect of the thickness of R,G and B phosphor on the electrical and optical characteristics in the reflective type AC PDP. By analyzing various parameters, such as addressing voltage, surface discharge voltage, luminance and luminous efficiency, the optimum value of the phosphor thickness is 50 ${\mu}m$ under the condition of 150 ${\mu}m$ barrier rib height.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.234-238
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• 1987

In this paper, the used specimen composition was added basic additives ($Bi_2O_3\;lmol%$, $Sb_2O_3\;lmol%$, CoO 0.5 mol%, MnO 0.5mol%) to ZnO powder, and $TiO_2$ (1,2,3,4 mol%) to the above basic composition. It appears that there are four regions of conduction current depended upon the strength of the applied electric field ; Ohimic region, Poole-Frenkel region, Schottky region and Tunneling region. Increasing of $TiO_2mol%$, the breakdown voltages of ZnO ceramic varistors are decreased. The decrease of breakdown voltages was explained with the decrease of potential barrier height. Moreover, V-I characteristics with temperature dependence are decreased with increasing of $TiO_2mol%$.

• Journal of Electrochemical Science and Technology
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• v.7 no.3
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• pp.185-189
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• 2016

The coupled channel method via the Local Reflection (LORE) matrix is employed to investigate the quantum mechanical behavior of the sticking or adsorption and desorption of hydrogen (H) atom on bilayer graphene via the armchair edge. The sticking and desorption probabilities of H are calculated and are plotted against the initial translational energy of H. The sticking probability plot shows a barrierless reaction indicating that hydrogen is easily adsorbed on the armchair edge of graphene. The desorption probability plot, however, shows that desorption of H from the graphene sheets is an activated process with a barrier height of 4.19 eV suggesting that a strong bond exists between the adsorbed H atom and the edge carbon atom. Thus, temperatures higher than the operating temperatures (300 - 1500 K) of conventional fuel cells are necessary to release the adsorbed H atom from the armchair edge of graphene.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.322-327
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• 2002

Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/Alq$_3$/Al to understand conduction mechanism. The current-voltage characteristics were measured in the temperature range of 8K ~ 300K. We analyzed an electrical conduction mechanism of the OLEDS using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling. In the temperature range above 150k, the conduction mechanism could be explained by space charge limited current from the inversely proportional temperature dependence of exponent m. The characteristic trap energy is found to be about 0.15ev. At low temperatures below 150k, the Fowler-Nordheim tunneling conduction mechanism is dominant. We have obtained a zero field barrier height to be about 0.6~0.8eV.

• Electrical & Electronic Materials
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• v.5 no.3
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• pp.310-319
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• 1992

LPCVD 방법으로 625.deg.C와 560.deg.에서 증착한 다결정 실리콘에 As이온주입량을 lx$10^{13}$-lx$10^{16}$/$cm^{2}$로 변화시키면서 열처리 전, 후의 미세구조와 전기적 특성 변화를 조사하였다. 625.deg.C에서 증착한 시편은 columnar구조를 하고 있어 표면이 매우 거칠었으며 900.deg.C, 30분 열처리 후에는 As doping 농도에 관계없이 결정립 크기는 200-300.angs.정도였다. 560.deg.C에서 증착한 시편은 비정질 상태로열처리 후에는 1000.angs.이상의 큰 결정립을 갖는 타원형의 결정립으로 성장하였으며 표면이 매우 smooth하였다. 같은 doping 농도에서 전기 전도도와 Hall mobility는 비정질 상태로 증착한 시편이 큰 결정립으로 인하여 다결정 상태로 증착한 시편에 비해 크게 되었다. Grain boundary trapping model에 의해 계산한 potential barrier height는 As doping 농도가 증가함에 따라 감소하였으며 grain boundary trap density는 증착 온도, As doping 농도 및 결정립 크기에 크게 관계없이 3.6~5*$10^{12}$/$cm^{2}$로 측정되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.349-352
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• 1996

When the ideality factor of collector current of AIGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) is larger than unity, conventional $I_{CO}$ / $T^2$ versus 1000/T plot used in the determination of the barrier height of base-emitter junction of HBT was deviated from the straight line. We introduced the effective temperature $T_{eff}$ as nT in the Thermionic-emission equation. The modified $I_{CO}$ /TB versus 1000/ $T_{eff}$ plot was on the straight line in the temperature range considered. The activation energy obtained from the modified plot is 1.61 eV. The conduction band discontinuity calculated using this value was 0.305 eV and this value is coincident with the generally accepted value of 0.3 eV. eV.

• Journal of the Korean Chemical Society
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• v.32 no.2
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• pp.103-112
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• 1988

For two possible paths of thermal ring opening reactions, the approximate reaction path functions, their norms and the approximate reaction path average energies are computed and compared. Illustrated examples clearly justify the postulate that the path with larger norm and lower average energy has lower barrier height than the other.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.1
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• pp.81-90
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• 1990

In this study, ion beam deposited tungsten thin film for gate material of GaAs SAGFET(Self Aligned Gate FET) was annealed from 800\ulcorner to 900\ulcorner using RTA and detailed investigations of structural and electrical characteristics of this film were carried out using four-point probe, XRD, SEM, AES and current-voltage measurement. Investigated results showed phase of as deposited tungsten film was fine grain \ulcornerphase and phase tdransformation of this film into \ulcornerphase occured at annealing condition of 900\ulcorner, 6sec. But regardless of phase transformation, electrical characteristics of tungsten film were very stable to 900\ulcorner and in case of 900\ulcorner, 4sec annealing condition Schottky barrier height obtained from 10 diodes measurements was 0.66 + 0.003 eV.