• Journal of The Korea Institute of Healthcare Architecture
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• v.23 no.4
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• pp.7-15
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• 2017

Purpose: The Korean government has implemented a Barrier Free Certification System since 2008 to create a secure and convenient environment for the socially disadvantaged. The drastic increase in the number of BF-certification facilities is expected due to the revision of the system and increasing the number of certification institutions. An analysis of individual evaluation items needs to be made for the BF-Certification with public confidence. Method: Korean standard, International Standard(ISO/FDIS 21542, 2011), German Standard(DIN 18040-1, 2010), Austrian Standard(${\ddot{O}}NORM$ B 1600, 2017) and Swiss Standard(Norm SIA 500 / SN 521 500, 2009) were investigated and analyzed. A comprehensive improvement plan is proposed by comparing details of the aforementioned standards and the evaluation items of BF-Certification. Results: Many problems arise in applying existing Barrier-free standards due to changes in population structure, environmental change and the use of powered wheelchairs. International standards are being improved to solve these problems. The korean standards also require improving of the Barrier Free Law and Certification System, which reflect these trends. In korean cases, standards such as the size of the doors (width and height), the Unobstructed Manoeuvring Space and Clear Space at the Latch side of the Door are required to improve standards in accordance with international standards. In addition, the expression of laws and evaluation items of BF-Certification should be clearly defined. And the application of visual contrast standards for the enhancement of perceptions presented in international standards should be considered. Implication: Barrier Free related legal standards and evaluation items of BF-Certification that are used in Korea are required to be revised in consideration of social and environmental changes. Comprehensive improvements should be made through detailed review.

• Korean Journal of Agricultural Science
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• v.38 no.2
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• pp.235-241
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• 2011

Recently, as people have become more interested in health issues, their demand on forest trails for bush walking exercise has increased. The purpose of the study is to select barrier factors into forest trail for disabled using wheelchairs. As a result this, it has selected 31 barrier factors through the Delphi method. Of all the these factors, the information board of forest trails, showing the location of the trails, has indicated the highest score of importance at 4.50. Next, securing hiker' walking safety space has indicated an importance level of 4.44; both the slope of forest trails and the height of obstacles have indicated an importance level of 4.38; and the effective width of forest trails has indicated the highest score of importance level of 4.33. From these indicated levels of importance, the respondents of the Delphi method consider the safety of users of forest trail' as the most important factor while the physically disables are hiking. That is why these factors have resulted in acquiring relatively higher values.

• Wind and Structures
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• v.14 no.1
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• pp.55-70
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• 2011

This study investigates the design criteria required for wind barriers to protect vehicles running on an expressway under a high side wind. At the first stage of this study, the lateral deviations of vehicles in crosswinds were computed from the commercial software, CarSim and TruckSim, and the critical wind speeds for a car accident were then evaluated from a predefined car accident index. The critical wind speeds for driving stability were found to be 35 m/s for a small passenger car, yet 30 m/s for a truck and a bus. From the wind tunnel tests, the minimum height of a wind barrier required to reduce the wind speed by 50% was found to be 12.5% of the road width. In the case of parallel bridges, the placement of two edge wind barriers plus one wind barrier at center was recommended for a separation distance larger than 20 m (four lanes) and 10 m (six lanes) respectively, otherwise two wind barriers were recommended.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2014.04a
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• pp.491-492
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• 2014

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2011.10a
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• pp.849-851
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• 2011

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.18-18
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• 2009

최근 다양하게 연구되고 있는 무분극(nonpolar) 갈륨질화물(GaN) 소재는 자발분극(spontaneous polarization) 및 압전분극(piezoelectric polarization) 등이 발생하지 않아 높은 내부양자효율의 확보가 가능하며, 이러한 장점을 바탕으로 고효율 특성을 갖는 발광다이오드(light-emitting diode) 및 고속 전자소자 등으로의 적용을 위한 연구가 활발히 수행 중 이다. 하지만, 무분극 GaN LED의 구현 시, GaN 박막의 비등방성 성장으로 인한 박막의 막질 저하와 함께 표면에 혼재하는 Ga층과 N층에서 기인되는 절연층의 생성으로 인한 오믹전극 형성의 어려움이 대두되고 있다. 따라서, 고효율의 무분극 GaN LED 구현을 위해서는 무분극 GaN층의 질소층 제거를 위한 표면처리 공정과 더불어 금속/무분극 GaN층 간 발생되는 쇼트키 장벽층의 높이(Schottky barrier height)를 제어하는 연구가 선행되어야 한다. 본 논문에서는 무분극 GaN LED 적용을 위한 n-형 전극물질 및 오믹조건 구현을 위한 금속/무분극 GaN층간 SBH의 제어방법에 대한 연구를 수행하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.295-295
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• 2016

Recently, TCO films with low carrier concentration, high mobility and high work function are proposed beneficial as front electrode in HIT solar cell due to free-carrier absorption in NIR wavelength region and low Schottky barrier height in the front TCO/a-Si:H(p) interface. We report high transmittance and work function zirconium-doped indium tin oxide (ITO:Zr) films with various plasma (Ar/O2 and Ar) conditions. The role of (Ar/O2) plasma was to enhance the work function of the ITO:Zr films whereas the pure Ar plasma based ITO:Zr showed good electrical properties. The RF magnetron sputtered ITO:Zr films with low resistivity and high transmittance were employed as front electrode in HIT solar cells, yield the best performance of 18.15% with an open-circuit voltage of 710 eV and current density of 34.63 mA/cm2. The high work function ITO:Zr films can be used to modify the front barrier height of HIT solar cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.147-147
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• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.236-236
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C - SiC thin film grown on Si substrates with thermal oxide layer using APCVD. Pd/poiy 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2\times10^{-3}\;A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about $400^{\circ}C$. According to $H_2$ concentrations, their barrier height($\Phi_{Bn}$) were changed 0.587 eV, 0.579 eV, 0.572 eV and 0.569 eV, respectively. the current was increased. Characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.199-202
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• 2014

The effect of neutron irradiation on the properties of SiC Schottky Diode has been investigated. SiC Schottky diodes were irradiated under neutron fluences and compared to the reference samples to study the radiation-induced changes in device properties. The condition of neutron irradiation was $3.1{\times}10^{10}$ $n/cm^2$. The current density after irradiation decreased from 12.7 to 0.75 $A/cm^2$. Also, a slight positive shift (${\Delta}V_{th}$= 0.15 V) in threshold voltage from 0.53 to 0.68 V and a positive change (${\Delta}{\Phi}_B$= 0.16 eV) of barrier height from 0.89 to 1.05 eV have been observed by the neutron irradiation, which is attributed to charge damage in the interface between the metal and the SiC layer.