• Journal of the Korean institute of surface engineering
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• v.46 no.4
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• pp.145-152
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• 2013

The growth behavior of nanocrystalline diamond (NCD) film has been studied for three different substrates, i.e. bare Si wafer, 1 ${\mu}m$ thick W and Ti films deposited on Si wafer by DC sputter. The surface roughness values of the substrates measured by AFM were Si < W < Ti. After ultrasonic seeding treatment using nanometer sized diamond powder, surface roughness remained as Si < W < Ti. The contact angles of the substrates were Si ($56^{\circ}$) > W ($31^{\circ}$) > Ti ($0^{\circ}$). During deposition in the microwave plasma CVD system, NCD particles were formed and evolved to film. For the first 0.5h, the values of NCD particle density were measured as Si < W < Ti. Since the energy barrier for heterogeneous nucleation is proportional to the contact angle of the substrate, the initial nucleus or particle densities are believed to be Si < W < Ti. Meanwhile, the NCD growth rate up to 2 h was W > Si > Ti. In the case of W substrate, NCD particles were coalesced and evolved to the film in the short time of 0.5 h, which could be attributed to the fact that the diffusion of carbon species on W substrate was fast. The slower diffusion of carbon on Si substrate is believed to be the reason for slower film growth than on W substrate. The surface of Ti substrate was observed as a vertically aligned needle shape. The NCD particle formed on the top of a Ti needle should be coalesced with the particle on the nearby needle by carbon diffusion. In this case, the diffusion length is longer than that of Si or W substrate which shows a relatively flat surface. This results in a slow growth rate of NCD on Ti substrate. As deposition time is prolonged, NCD particles grow with carbon species attached from the plasma and coalesce with nearby particles, leaving many voids in NCD/Ti interface. The low adhesion of NCD films on Ti substrate is related to the void structure of NCD/Ti interface.

• Journal of Conservation Science
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• v.34 no.6
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• pp.459-470
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• 2018

Cellulose nitrates were used for folklore artifacts(ornamental beads and pipes in hatstrings, frames of eyeglasses, ornamental eyeglass cases, headband ornaments, and jeogori buttons) between the 19th and 20th centuries; however, they are susceptible to cracking, crazing, embrittlement, and crumbling due to deterioration. To consolidate and adhere deteriorated cellulose nitrate folklore artifacts, water-soluble acrylic emulsion adhesives were investigated. For consolidation, Plextol D 498, which has the lowest viscosity in low concentrations, was used. In adhesive films whose glass transition temperature(Tg) is lower than room temperature, the tensile stress and modulus decreased and the strain increased; therefore, the flexibility was high. The Plextol D 498 and Plextol D 498 and Dispersion K 52 films maintained their adhesiveness and flexibility after artificial-sunlight-accelerated ageing, and Plextol D 498 and Dispersion K 52 films hardly caused yellowing. Plextol D 498 was the most stable for accelerating ageing. A low concentration of Plextol D 498 emulsion resulted in the best permeability on the surface of cellulose nitrate, compared with other acrylic emulsions. To prevent ornamental hatstrings from cracking, crazing, embrittlement, and crumbling, a Plextol D 498 emulsion was used. After applying low concentrations(1%, 3%) of the emulsion to consolidate the fragments and high concentration to adhere the fragments, the ornamental hatstrings were protected from crumbling by deterioration, and their fragments were well-adhered. To preserve it from deterioration by oxygen and humidity, the treated ornament was sealed with an oxygen-barrier film using a low-humidity oxygen scavenger.

• Korean Journal of Food Science and Technology
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• v.30 no.6
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• pp.1381-1387
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• 1998

Laminated films were prepared by casting corn-zein and fatty acid mixed solutions onto ${\kappa}-carrageenan$ films, and the effect of various fatty acids with different concentrations on the film properties such as water vapor permeabilities (WVP), tensile strength (TS) and elongation was investigated. WVP of the film decreased as concentration of fatty acids increased, and the lowest WVP value $(0.497\;ng\;m/m^2\;s\;Pa)$ was achieved with laminated films containing 30% lauric acid/corn-zein. The TS of laminated edible film seemed to decrease as the concentration of fatty acids increased, and TS of the laminated film was the highest (36.21 MPa) when the film contained 10% oleic acid. Weight loss of the minced mackerels packaged with corn-zein/carrageenan film which did not contain fatty acid was 11.7%, but weight losses of the samples packaged with oleic acid and lauric acid were 6.97% and 0.81%, respectively, after 30 days storage at $-20^{\circ}C$. The laminated films had an effect on preventing oxidation of the minced mackerels during storage because of high oxygen barrier property of the film. All of the minced mackerels packaged with the laminated films greatly reduced the peroxide value (POV) compared with unpackaged minced mackerels during storage. Also, thiobarbituric acid (TBA) values of the minced mackerels packaged with the laminated films were lower than that of unpackaged minced mackerels during storage.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.456-460
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• 2011

Recently, the size of currently-researched components and devices reduces nano-scale. Thus, it is important and emphasizes the analyses of physical properties in nano scale. Especially, the mechanical properties are not over micro-scale components but nano-scale components with different characteristics that has been reported. However, most analytical methods for currently studying in nano-scale are related to spectroscopy and electronics, affected the limitation of viewing size that these methods give only average information. In this research, the representative nanotribology analyses, nano-indenter study the physical and mechanical properties of W-N thin film for nano region and nano depth within nano-scale that the thickness of W-N diffusion barrier has less than tens of nanometers. The Scanning probe microscopy (SPM) study the surface image. From these results, the hardness of W-N thin film underneath the nano-surface decreased from 57.67 GPa to 9.1 GPa according to the increase of nitrogen gas flow. The elastic modulus of W-N thin film underneath the nano-surface also decreased from 575.53 GPa to 178.1 GPa.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.88-93
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• 2024

To evaluate the possibility as a multi-level memory medium for the Ge₂Sb₂Te₅/TiN/W-doped Ge₂Sb₂Te₅ cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge₂Sb₂Te₅ and W-doped Ge₂Sb₂Te₅ thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Journal of the Korean Magnetics Society
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• v.23 no.6
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• pp.184-187
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• 2013

The influence of insertion of an ultra-thin Cu-Phthalocyanine (CuPc) between MgO barrier and ferromagnetic layer in magnetic tunnel juctions (MTJs) was investigated. In order to understand the relation between the electronic and structural properties of Fe${\backslash}$MgO${\backslash}$CuPc, the surface (or interface) analysis was carried out systematically by using spin polarized metastable He de-excited spectroscopy for the CuPc films grown on the Si(001)${\backslash}$5 nm MgO(001)${\backslash}$7 nm Fe(001)${\backslash}$1.6 nm MgO(001) multilayer structure as the thickness of CuPc increases from 0 to 5 nm. In particular, for the 1.6 nm CuPc surface, a rather strong spin asymmetry between up- and down-spin band appears while it becomes weaker or disappears for the CuPc films thinner or thicker than ~1.6 nm. Our results emphasize the importance of the interfacial electronic properties of organic layers in the spin transport of the hybrid MTJs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).