• Transactions on Electrical and Electronic Materials
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• 제14권6호
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• pp.329-333
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• 2013

SiOC films were prepared by capacitively coupled plasma chemical vapor deposition, and the correlation between the binding energy by X-ray photoelectron spectroscopy and Arrhenius equation for ionization energy was studied. The ionization energy decreased with increase of the potential barrier, and then the dielectric constant also decreased. The binding energy decreased with increase of the potential barrier. The dielectric constant and electrical characteristic of SiOC film was obtained by Arrhenius equation. The dielectric constant of SiOC film was decreased by lowering the polarization, which was made from the recombination between opposite polar sites, and the dissociation energy during the deposition. The SiOC film with the lowest dielectric constant had a flat surface, which depended on how carbocations recombined with other broken bonds of precursor molecules, and it became a fine cross-linked structure with low ionization energy, which contributed to decreasing the binding energy by Si 2p, C 1s electron orbital spectra and O 1s electron orbital spectra. The dielectric constant after annealing decreased, owing to the extraction of the $H_2O$ group, and lowering of the polarity.

• 반도체디스플레이기술학회지
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• 제16권1호
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• pp.1-5
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.

• 한국염색가공학회:학술대회논문집
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• 한국염색가공학회 2011년도 제45차 학술발표회
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• pp.29-29
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• 2011

폴리에스테르는 많은 분야에서 응용되어 사용되어지고 있으나 최근 더욱 우수한 물성이 각 분야에서 요구되어 지고 있다. Poly (ethylene naphthalate)(PEN)는 PET 주쇄의 벤젠고리에 나프탈렌으로 치환되어 강직성이 강화되어 PET보다 약 $50^{\circ}C$정도 높은 $T_g(117^{\circ}C)$와 $10^{\circ}C$정도 높은 $T_m(265^{\circ}C)$을 가져서 열적 안정성, 고강도와 저신도를 갖는다. PEN은 상대적으로 우수한 내열성과 환경호르몬을 포함하지 않아 인체에 무해하다는 이점 때문에 수유병이나 머그컵으로도 사용되어질 수 있다. 또한 탄산음료 용 bottle이나 맥주 bottle등은 높은 barrier성이 요구되어지기 때문에 PET에 비해 약 5배 높은 barrier 성을 가지는 PEN을 블렌드하여 사용하기도 한다. PEN의 내열성 및 기계적 강도를 더욱 우수하게 하고자 고분자 사슬을 가교할 수 있는데, 가교에는 열처리 또는 감마선, 전자선, 자외선 조사를 이용할 수 있는데 열에 의한 가교는 균일한 열전달과 고온이 필요하며 감마선 및 전자선 조사는 설비의 고비용과 방사선 노출 위험으로 인해 비친환경적이다. 반면에 자외선 조사법은 다루기 쉽고 비용이 적게 들고 친환경적인 장점을 가진다. 본 연구에서는 PEN film의 열안정성과 기계적 특성을 향상시키기 위해 자외선 조사를 이용하여 PEN film의 광가교를 수행하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.173-174
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• 2007

반도체 소자가 발달함에 따라서 박막은 더욱 다층화 되고 그 두께는 줄어들고 있다. 따라서 소자의 초고집적화를 위해서는 각 박막의 두께를 더욱 작게 하여야 한다. 또한 반도체 소자 제조 공정에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 금속 배선과 Si기판 사이에는 필연적으로 확산방지막을 삽입하게 되었다. 기존의 연구에서는 $1000\;{\AA}$의 W-B-C-N 확산방지막을 제작하여 연구하였다. 이 논문에서는 Cu의 확산을 방지하기 위한 W-B-C-N 확산방지막을 다양한 두께로 제작하여 그 특성을 확인하여 초고집적화를 위한 더욱 얇은 두께의 W-B-C-N 확산방지막에 대하여 연구하였다. W-B-C-N 확산방지막의 두께 변화에 대한 특성을 확인하기 위하여 $900^{\circ}C$까지 열처리 한 후 그 면저항을 측정하였다.

• 한국초전도ㆍ저온공학회논문지
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• 제12권4호
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• pp.17-19
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• 2010

In this work, the optimized process condition of chemical solution deposition which is used to planarize the surface of the metal tape (which is used to grow IBAD-MgO texture template) was investigated. $Y_2O_3$ films were dip-coated on the surface of the unpolished metal tape as the seed and barrier layer. The effects of $Y_2O_3$ concentration of the solution (0.5wt.%, 1.3wt.%, 2.8wt.%, 5.6wt.%) and the number of coatings on the surface morphology and barrier capability against the diffusion from the metal tape were examined. The surface morphology and the thickness of the film were observed using the scanning electron microscope and the atomic force microscope. The presence of elements in metal tape on the film surface was analyzed using the auger electron spectroscopy. The $Y_2O_3$ film thickness increases with increasing the $Y_2O_3$ concentration in the solution, and the surface became smoother with increasing the number of coating cycles. The best result was obtained from the $Y_2O_3$ film coated 4 cycles using 2.8wt.% solution.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• Journal of information and communication convergence engineering
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• 제1권1호
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• pp.23-26
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• 2003

A photodiode capable of obtaining a sufficient photo/dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. Growth of high quality alumina($Al_{2}O_{3}$) film using anodizing technology is proposed and analyzed by experiment. We have obtained the film with a superior characteristics

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.633-636
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• 2006

GE has developed a plastic substrate technology comprised of a superior high-heat polycarbonate substrate film and a unique transparent coating package that provides the ultrahigh barrier to moisture and oxygen, and chemical resistance to solvents used in device fabrication. This contribution will update recent progresses made at GEFlexible Ultra-high Gas Barrier Substrate for Organic Electronics on ultra-high barrier coated plastic substrate, both in batch mode and in roll-to-roll mode

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.788-790
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• 2003

Closed-cell type barrier ribs of PDP were formed by capillary molding process using molds prepared by inclined UV lithography process. Various types of molds with different inclined angles were prepared by patterning SU-8 thick photoresist film and casting with PDMS. The ribs with various type cells were successfully formed by the process. The effects of inclined angle on the distortion of barrier ribs during sintering were investigated. The results indicated that the barrier ribs with a draft angle and dimensional change does not affect the distortion of the barrier ribs during sintering, suggesting that the closed-cell must be isotropic in sintering shrinkage.

• 한국표면공학회지
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• 제37권3호
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• pp.185-190
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• 2004

Plasma Display Panel is a display device emitting fluorescent light from gas discharge between a front and a rear panel sealed together. Front and rear panel have multitude of film layers and barrier ribs in the rear panel has the largest area so releasing various gases and affecting light emitting characteristics and lifetime. The remaining gases in a barrier rib were studied by thermal desorption analysis up to $400^{\circ}C$ and main gases were $H_2$ $H_2$O, CO. During sustaining at $300^{\circ}C$, the outgassing rates from other gases were decreased but$ H_2$ kept constantly increasing until 1 hour, which can be originated from the dissociation of organics remained in the inside of barrier rib material. In $H_2$O, two distinct peaks were observed: desorption from physically adsorbed one at $l00^{\circ}C$ and from chemically adsorbed one $400^{\circ}C$. The result can be utilized in interpretation of electronic and optical characteristics and evacuation process control of PDP