• Applied Chemistry for Engineering
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• v.23 no.6
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• pp.539-545
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• 2012

3-(2-benzotriazolovinyl)thiophene (BVT) was synthesized by the connection of the thiophene with the electron-withdrawing group, benzotriazole, through the vinylene. Its structure was confirmed by FT-IR, $^1H$-NMR, $^{13}C$-NMR and 2D hetero-cosy spectroscopy. Both BVT and 3-octylthiophene (OT) were copolymerized and showed an average molecular weight of 12000 (PDI 2.67) and 15000 (PDI 2.55), respectively. The copolymers were dissolved in the organic solvent such as chloroform, THF, TCE, etc. The mole ratios of BVT and OT in the synthesized copolymers were confirmed as 1 : 1.8 and 1 : 2.8 from $^1H$-NMR spectra. The UV-vis maximum absorption of copolymers appeared at the wavelength of 470 nm and 465 nm and the photoluminescence at ${\lambda}_{max}$ = 662 nm and 641 nm correspond to red-orange light. The band gaps of copolymers at 1.96 eV and 2.02 eV were found to be higher than those of poly(3-octylthiophene). The HOMO energy levels of the copolymers decreased overall in comparison with those of poly(3-octylthiophene), but the overall LUMO energy level increased.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.3
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• pp.691-698
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• 2010

In this study Al-doped ZnO (AZO) thin films have been fabricated on Eagle 2000 glass substrates at various substrate temperature ($100{\sim}500^{\circ}C$) and working pressure (10 ~ 40 mTorr) by RF magnetron sputtering in order to investigate the structural, electrical, and optical properties of the AZO thin films. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The AZO thin films, which were deposited at $T=300^{\circ}C$ for 10 mTorr, shows the highest (002) orientation, and the full width at half maximum (FWHM) of the (002) diffraction peak is $0.42^{\circ}$. The lowest resistivity ($2.64{\times}10^{-3}\;{\Omega}cm$) with the highest cartier concentration ($5.29{\times}10^{20}\;cm^{-3}$) and a Hall mobility of ($6.23\;cm^2/Vs$) are obtained in the AZO thin films deposited at $T=300^{\circ}C$ for 10 mTorr. The optical transmittance in the visible region is approximately 80%, regardless of process conditions. The optical band-gap depends on the Al doping level as the substrate temperature increases and the working pressure decrease. The optical band-gap widening is proportional to cartier concentration due to the Burstein-Moss effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.409-409
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• 2014

Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.

• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.211-216
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• 2009

Much research into two-dimensional (2-D) photonic crystal (PC) structures has been conducted for realization of ultrasmall optical integrated circuits. A 2-D silicon (Si) PC slab structure with air cladding (n=1) is one of the representative structures in 2-D PCs. While air-clad Si PC slab structures have good optical characteristics, their suspension in air can lead to mechanical weakness, making integration with some optical devices difficult. In this paper, we propose improving the mechanical robustness of PC structure by developing a 2-D Si PC structure with symmetric silica cladding (n=1.44) and comparing its optical properties to that of the air-clad structure. First, we investigate the optical properties of a 2-D Si PC slab structure with air cladding by using a 3-D finite difference time domain method. We determined that a photonic bandgap of 330 nm and a non-leaky propagating bandwidth of 100 nm in the optical communication range are possible. Next, we investigate the optical properties of 2-D Si PC slab structures with silica cladding. Even though the refractive index of the silica cladding is higher than that of air, we developed a silica-clad structure with good optical properties: a photonic band gap of approximately 230 nm and a non-leaky propagating bandwidth of 90 nm, comparable to that of the air-clad PC structures.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1213-1218
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• 2013

In this study, Ga-doped ZnO (GZO) thin films were fabricated on transparent sapphire substrate by RF magnetron sputtering method and then investigated the effect of various substrate temperature on the electrical, optical properties and characteristic of crystallization of the GZO thin films. The electrical property indicated that the lowest resistivity ($4.18{\times}10^{-4}{\Omega}cm$), the highest carrier concentration ($6.77{\times}10^{20}cm^{-3}$) and Hall mobility ($22cm^2/Vs$) were obtained in the GZO thin film fabricated at $300^{\circ}C$. And for this condition, the highest c-axis orientation and (002) diffraction peak which exhibits a FWHM of $0.34^{\circ}$ were obtained. From the results of AFM measurements, it is known that the highest crystallinity is observed at $300^{\circ}C$. The transmittance spectrum in the visible range was approximately 80 % regardless of substrate temperature. The optical band-gap showed the blue-shift as increasing the substrate temperature to $300^{\circ}C$, and they are all larger than the band gap of bulk ZnO (3.3 eV). It can be explained by the Burstein-Moss effect.

• Korean Journal of Optics and Photonics
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• v.9 no.4
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• pp.221-226
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• 1998

Ternary heavy metal oxide glasses in the $PbO-Bi_2O_3-Ga_2O_3$ system doped with $Er_2O_3$ were prepared and their spectroscopic properties, such as radiative transition probability, calculated and measured radiative lifetimes and cross-sections of 1.5 $\mu\textrm{m}$ and 2.7 $\mu\textrm{m}$ emissions were analyzed. Enhanced quantum efficiencies of some electronic transitions were evident mainly because of the low vibrational phonon energy ($~500cm^{-1}$) inherent in the host glasses. This seems to be the main reason for obtaining the 2.7 $\mu\textrm{m}$ luminescence which is normally quenched in the conventional oxide glasses. In addition, green and red fluorescence emissions were observed through the frequency upconversion processes of the 798 nm excitation. Non-radiative transition due to the multiphonon relaxation is a dominant lifetime-shortening mechanism in the 4f-4f transitions in $Er^{3+}$ ion except for the $^4S_{3/2}{\rightarrow}^4I_{15/2}$ transition where a non-radiative transfer to band-gap excitation of the host glasses is dominant. Melting of glasses under an inert gas atmosphere and (or) addition of the typical glass-network former into glasses is necessary in order to enhance the quantum efficiency of the transition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.4
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• pp.154-158
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• 2021

The optical transmittance of Mn-doped SnO₂ monolayer film increased gradually from 80.9 to 85.4 % at 550 nm wavelengths upon increasing the O₂/Ar+O₂ concentration rate from 0 to 7.9 % and the band gap energy changed from 3.0 to 3.6 eV. The resistivity tended to decrease from 3.21 Ω·cm to 0.03 Ω·cm, reaching a minimum at 2.7 %, and then gradually increased from 0.03 to 52.0 Ω·cm at higher O₂/Ar+O₂ gas concentration ratio. Based on XPS spectra analysis, the Sn 3d_5/2 peak of Mn-doped SnO₂ single layer shifted slightly from 486.40 to 486.58 and O_1s peak also shifted from 530.20 to 530.33 eV with increase the O₂/Ar+O₂ concentration ratio. Therefore, the XPS spectra results indicate that a multiphase with SnO and SnO₂ coexisted in the sputtered Mn-doped SnO₂ monolayer film.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.2
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• pp.76-80
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• 2007

In this paper, the PAE (Power Added Efficiency) and the linearity of the Doherty amplifier has been improved using dual bias control and PBG (Photonic BandGap) structure. The PBG structure has used to implement on output matching circuit and dual bias control has applied to improve the PAE of the Doherty amplifier at a low input level by applying it to a carrier amplifier. The Doherty amplifier using the proposed structure has improved PAE by 8% and 5dBc of IMD3 (3rd Inter-Modulation Distortion) compared with those of the conventional class AB amplifier. In addition to, it has been evident that the designed the structure has showed more than a 30% increase in PAE for flatness over all input power level.

• 전자공학회논문지 IE
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• v.43 no.1
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• pp.32-38
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• 2006

When induction motor moves, power quality decline of line is risen seriously because provoking voltage drop the moment to system power supply by excessive moving current as well as power-factor drop in case drive by light-load because current reaches in 6 times $\sim$ 8 times of rated current. In this paper, a modeling did an distribution system 13 bus type model and induction machine load presents in IEEE using a PSCAD/EMTDE package, and it displayed an accident conspiracy and a compensating factor of DSTATCOM through simulation show.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.10 s.113
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• pp.935-942
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• 2006

In this paper, a novel theory of realizing the series capacitor with broadside coupled suspended substrate stripline (BCSSS) is proposed. The proposed theory is relatively simple because the method of odd mode analysis is only applied: However, this theory supplies reliable result by considering the line effective width and end effect caused by the fringing field. The simulation results are presented to compare and analyze the characteristics of the ideal lumped capacitor and the coupled line capacitor. Also, the capacitive gap coupled line band-pass filter based on the proposed theory are designed and fabricated. The results prove successfully the validity of the proposed theory.