• Proceedings of the KIEE Conference
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• 2004.11d
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• pp.63-66
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• 2004

It is widely known that the ultra high frequency (UHF) method that detects the electromagnetic wave of the PD pulses in the gas insulated space is one of the most competitive methods for its high sensitivity. From the above point of view, this paper describes the characteristics of GIS PD signals measured with ultra wide band (UWB) GIS PD defecting system in which PD signals are defected into the dual UHF band. Thc UWB PD detection system consists of the UWB UHF coupler, the UWB low noise amplifier (LNA) and the oscilloscope. The dual bands for PD signals are 0.5-2GHz(full band) and 1-2GHz(high band). As results, it was found that the partial discharges of each defect have their own characteristic pattern and the ratio of High hand to Full band increases with gas pressure.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

• Journal of IKEEE
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• v.24 no.4
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• pp.1093-1097
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• 2020

This work describes the design and characterization of a Ku-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) for satellite communication applications. The device technology used relies on 0.25 ㎛ gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) of wireless information networking (WIN) semiconductor foundry. The developed Ku-band PHEMT MMIC power amplifier has a small-signal gain of 22.2~23.1 dB and saturated output power of 34.8~35.4 dBm over the entire band of 13.75 to 14.5 GHz. Maximum saturated output power is a 35.4 dBm (3.47 W) at 13.75 GHz. Its power added efficiency (PAE) is 30.6~37.83% and the chip dimensions are 4.4 mm×1.9 mm. The developed 3 W PHEMT MMIC power amplifier is expected to be applied in a variety of Ku-band satellite communication applications.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.8
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• pp.98-103
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• 2015

Power plant is that very high reliability when industrial and economic impact on the overall electric power system is required, it is essential to improve the reliability, especially the fault prediction diagnosis. Since an accident caused by the partial discharge in the power plant is above state has a faster response characteristic than the other indications in the case of any, the partial discharge generated in the power plant immediately detect the deterioration of insulation due to the accident of the power plant and the non-drawn It should prevent or reduce. Partial Discharge Measuring Systems for UHV SF6 Gas Insulated Switchgear and power transformer on site installed has some probability of abnormal recognition in case of non-flexible deal with on site noise. Many methode to eliminate these kinds of noises, UHF Detection System is chosen as purchase description in Korea, but this system having a bandwidth between 500MHz 1.5GHz wide band. Initial install periods(about 20 years ago), this band had no strong signal source, but in these days this wide band have strong signals, such as LTE. So, module described in this paper is designed as simultaneously use with wide and narrow band for solve this noise problem, and introduce this system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.1
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• pp.47-54
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• 2013

This paper introduces a W-band millimeter-wave power standard transfer system using the direct comparison method. The transfer system was developed to evaluate the effective efficiency and calibration factor of a W-band waveguide power sensor. The evaluation method and the measured results of the directional coupler that characterizes the calibration system are studied. The uncertainties of the standard transfer system are investigated, and the major uncertainty contributors are discussed as well. The performance of the realized W-band power standard transfer system was verified by comparing results with reference values.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.7
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• pp.839-846
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• 2007

In this paper, the first attempt to design a novel structure of dual-band feedforward linear power amplifier(FFW LPA) was presented. Up to now, primary technical difficulty has been the extension of the conventional signal canceller to the dual-band operation. Therefore, we propose the design technique of the dual-band equal group delayed carrier canceller, the dual-band equal group delayed intermodulation distortion(IMD) canceller and the dual-band FFW LPA. The operation frequency bands of the implemented dual-band FFW LPA are digital cellular($f_0=880$ MHz) and IMT-2000($f_0=2.14$ GHz) band, which are separated about 1.26 GHz. With the high power amplifier of 120 W PEP for commercial base-station application, IMD cancellation loop shows 20.45 dB and 25.04 dB loop suppression at each band of operation for 100 MHz. From the adjacent channel leakage ratio(ACLR) measurement with CDMA IS-95A 4FA and WCDMA 4FA signal, we obtained 16.52 dB improvement at the average output power of 41.5 dBm for digital cellular band, and 18.59 dB improvement at the average output power of 40 dBm for IMT-2000 band simultaneously.

• Journal of Korea Multimedia Society
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• v.25 no.8
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• pp.1022-1037
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• 2022

It is important to develop a transducer that generates uniform output power through frequency control of the HIFU at 4 MHz frequency for the high intensity focused ultrasound (HIFU) skin diseases treatment. In this paper, a 4 MHz frequency band HIFU system for skin disease treatment was designed, manufactured and developed. In HIFU, even for the ultrasonic vibrator in the 4 MHz frequency band, the characteristics of the output power of the HIFU are different depending on the difference in the thickness of the PZT material. Through the development of a system amplifier, the sound output of the HIFU transducer was improved to more than 48 W and uniform output power control was possible. And, it is possible to control the output power even in a frequency band of 4.0 to 4.7 MHz, which is wider than 4.0 MHz, and shows the resonance frequency of the transducer. The maximum output power for each frequency was 49.969 W and the minimum value was 48.018 W. The maximum output power compared to the minimum output power is 49.969 W, which is uniform within 4.1%. It was confirmed that the output power of the HIFU through the amplifier can be uniformly controlled in the 4 MHz frequency band.

• ETRI Journal
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• v.36 no.3
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• pp.498-501
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• 2014

A C-band 50 W high-power microwave monolithic integrated circuit amplifier for use in a phased-array radar system was designed and fabricated using commercial $0.25{\mu}m$ AlGaN/GaN technology. This two-stage amplifier can achieve a saturated output power of 50 W with higher than 35% power-added efficiency and 22 dB small-signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact $14.82mm^2$ chip area, an output power density of $3.2W/mm^2$ is demonstrated.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.12
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• pp.78-83
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• 2010

In this paper, a novel dual-band power amplifier using metamaterials has been realized with one RF GaN HEMT diffusion metal-oxide-semiconductor field effect transistor. The CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. We have managed only the second- and third-harmonics to obtain the high efficiency with the CRLH TL in dual-band. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency. Two operating frequencies are chosen at 900 MHz and 2140 MHz in this work. The measured results show that the output power of 39.83 dBm and 35.17 dBm was obtained at 900 MHz and 2140 MHz, respectively. At this point, we have obtained the power-added efficiency (PAE) and IMD of 60.2 %, -23.17dBc and 67.3 %, -25.67dBc at two operation frequencies, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.12
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• pp.1083-1090
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• 2015

We designed and manufactured Ka-band SSPA include drive amplifier and high power amplifier MMICs by $0.15{\mu}m$ GaN commercial process. Also, we fabricated main components micro-strip line to WR28 waveguide transition and WR28 wave guide power combiner for Ka-band SSPA. This Ka-band SSPA shows saturated output power 44.2 dBm, power added efficiency 16.6 % and power gain 39.2 dB at 29~31 GHz frequency band.