• Title/Summary/Keyword: band power

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A Study on Inter Band Interference and PAPR Reduction in Multi-Cell System based on OFDM Techniques (OFDM 기법에 기반한 Multi-Cell 시스템에서 PAPR 감소와 대역간 간섭에 관한 연구)

  • Kim, Wan-Tae;Yoo, Sun-Yong;Jo, Sung-Joon
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2008.10a
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    • pp.693-696
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    • 2008
  • The systems for mobile communication services of fourth generation use OFDM (Orthogonal Frequency Division Multiplexing) scheme that ran transmit large amounts of data to support the multimedia services, and consist of several types of cell, such as Macro Cell, Pico Cell, Femto Cell to improve the qualify of service. According to subdivision of communication region, superposition of cells in co-channel different from conventional single cell is used, but it cause inter band interference between systems. In particular, an OFDM signal consists of a number of independently modulated subcarriers, and superposition of these subcarriers causes a problem that ran give a large PAPR. Increased PAPR induces signal distortion passing through components such as power amplifier so that inter band interference is caused by out-of-band spectrum radiation. In order to minimize the inter band interference, this paper applies PAPR reduction scheme and analyzes the out-of-band spectrum radiation when the signal passes through nonlinear components such an power amplifier.

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E-band low-noise amplifier MMIC with impedance-controllable filter using SiGe 130-nm BiCMOS technology

  • Chang, Woojin;Lee, Jong-Min;Kim, Seong-Il;Lee, Sang-Heung;Kang, Dong Min
    • ETRI Journal
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    • v.42 no.5
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    • pp.781-789
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    • 2020
  • In this study, an E-band low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) has been designed using silicon-germanium 130-nm bipolar complementary metal-oxide-semiconductor technology to suppress unwanted signal gain outside operating frequencies and improve the signal gain and noise figures at operating frequencies. The proposed impedance-controllable filter has series (Rs) and parallel (Rp) resistors instead of a conventional inductor-capacitor (L-C) filter without any resistor in an interstage matching circuit. Using the impedance-controllable filter instead of the conventional L-C filter, the unwanted high signal gains of the designed E-band LNA at frequencies of 54 GHz to 57 GHz are suppressed by 8 dB to 12 dB from 24 dB to 26 dB to 12 dB to 18 dB. The small-signal gain S21 at the operating frequencies of 70 GHz to 95 GHz are only decreased by 1.4 dB to 2.4 dB from 21.6 dB to 25.4 dB to 19.2 dB to 24.0 dB. The fabricated E-band LNA MMIC with the proposed filter has a measured S21 of 16 dB to 21 dB, input matching (S11) of -14 dB to -5 dB, and output matching (S22) of -19 dB to -4 dB at E-band operating frequencies of 70 GHz to 95 GHz.

Parameter Evaluation of High-Power Pulse Transformer for L-Band 30-MW Klystron (L-band 30-MW 클라이스트론용 고출력 펄스트랜스포머의 파라미터 평가)

  • Jang, S.D.;Son, Y.G.;Kwon, S.J.;Oh, J.S.;Kim, S.H.;Yang, H.R.;Moon, S.I.;Kwon, B.H.;Cho, M.H.;NamKung, W.
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1079-1081
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    • 2007
  • An L-band Linear Accelerator System for E-beam sterilization is under construction for bio-technology application. The klystron-modulator system as an RF microwave source has an important role as major components to offer the system reliability for long time steady-state operations. A PFN line type pulse generator with a peak power of 71.5-MW, $7\;{\mu}s$, 285 pps is required to drive a high-power klystron. The high power pulse transformer has a function of transferring pulse energy from a pulsed power source to a high power load. The pulse transformer producing a pulse with a peak voltage of 275 kV is required to produce 30-MW peak and 60 kW average RF output power at the frequency of 1.3-GHz. We have designed the high power pulse transformer with 1:13 step-up ratio. The peak and average power capability is 71.5-MW (275 kV, 260 A at load side with $7\;{\mu}s$ pulse width) and 130 kW, respectively. In this paper, we present measurements and its analysis on the design parameters, and an initial test result as well as a design concept on the high-power pulse transformer.

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A Study on a Ku-Band High Power and High Efficiency Radial Combiner (Ku 대역 고출력 고효율 Radial Combiner에 대한 연구)

  • Yun, Song-Hyun;Kim, Si-Ok;Lee, Su Hyun;Lim, Byeong-Ok;Lee, Bok-Hyung;Jeon, Yong-Kyu;Kim, Hyun-Kyu;Yoo, Young-Geun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.5
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    • pp.400-409
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    • 2017
  • We have studied a combiner that can withstand high power while minimizing insertion loss in high frequency band. In particularly, because the output power that can be output per unit elements is much lower in the Ku band and above than in the low frequency band, it is necessary to combine many semiconductor elements in order to make a high power SSPA. A planar combiner such as a microstrip, as the number of elements to be combined increases, the insertion loss increases proportionally, resulting in a reduction in the overall system efficiency and an increase heating value also. The planar combiner also have some problems due to the low power handling rate. To improve these problems, we proposed a Cavity Radial Combiner. A Ku band 16-way Cavity Radial Combiner was fabricated and measured. As a result, it was tested 14dB return loss and over 94.5 % output combining efficiency in design band.

A New Dual Band Branch Line Hybrid Coupler with Arbitrary Power Division Ratio (임의의 분배비를 갖는 새로운 이중 대역 가지 선로 결합기)

  • Kim, Kwi-Soo;Gwon, Chil-Hyeun;Dorjsuren, Baatarkhuu;Lim, Jong-Sik;Ahn, Dal
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.5
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    • pp.444-449
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    • 2009
  • This paper presents the design of a dual band branch line hybrid coupler(BLHC) with different power division ratios at two bands. In the proposed design, transmission lines of the BLHC are transformed to $\pi$-type equivalent circuits which represent different impedances and $\lambda/4$ electrical length at two frequency bands. In order to verify the proposed method, a dual band coupler with different power division ratios is designed for 0.9 GHz and 2 GHz applications. The desired power division ratios are 1:1 and 1:3 at the two operating frequency bands. The measured results show excellent performance with an insertion loss of less than 0.33 dB, a return loss of less than -18.07 dB, and good isolation characteristics.

High-Isolation Ka-Band Power Combiner Using a Resistive Septum Inserted in a Slit of Waveguide (홈을 가진 도파관에 결합된 저항성 격막을 이용한 높은 격리도 특성의 Ka-대역 전력합성기)

  • Kim, Choul-Young;Shin, Im-Hyu;Lee, Man-Hee;Joo, Ji-Han;Lee, Sang-Joo;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.3
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    • pp.335-342
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    • 2012
  • A high-isolation Ka-band WR-28 waveguide power combiner is designed and implemented using a resistive septum. The waveguide power combiner developed here is an E-plane T-junction type with a TaN resistive septum inserted in a slit of waveguide junction. The fabricated waveguide power combiner shows a return loss better than -20 dB and an insertion loss less than 0.1 dB. Also the measurement shows isolation levels of 20 dB or more almost all over the band and in particular 25 dB or more below 37 GHz. The amplitude and phase imbalance are measured to be less than 0.1 dB and $2.5^{\circ}$, respectively.

The Double Balance Mixer Design with the Characteristics of Low Intermodulation Distortion, and Wide Dynamic Range with Low LO-power using InGaP/GaAs HBT Process (InGaP/GaAs HBT공정을 이용하여 낮은 LO파워로 동작하고 낮은 IMD와 광대역 특성을 갖는 이중평형 믹서설계)

  • S. H. Lee;S. S. Choi;J. Y. Lee;J. C. Lee;B. Lee;J. H. Kim;N. Y. Kim;Y. H. Lee;S. H. Jeon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.9
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    • pp.944-949
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    • 2003
  • In this paper, the double balance mixer(DBM) for Ku-band LNB using InGaP/GaAs HBT process is suggested for the characteristics of low DC power consumption, low noise figure, low intermodulation distortion and wide dynamic range. The 5 dB conversion gain, 14 dB NF, bandwidth 17.9 GHz and 50.34 dBc IMD are obtained under RF input power of -23 dBm, with bias condition as 3 V and 16 mA. The linearity of InGaP/GaAs HBT, the broad band input matching scheme and the optimization of bias point result in the low IMD, the broad bandwidth and the low power consumption characteristics.

Concurrent Dual-Band Class-E Power Amplifier Using a Multi-Harmonic Matching Network (Multi-Harmonic Matching Network을 이용한 동시-이중 대역 Class-E 전력 증폭기)

  • Park, Seung-Won;Jeon, Sanggeun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.4
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    • pp.401-410
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    • 2014
  • This paper presents a high-efficiency concurrent dual-band Class-E power amplifier(PA) that is based on a multi-harmonic matching network(MHMN). The proposed MHMN controls the impedance at 1.3 GHz, 2.1 GHz, and their second and third harmonics, respectively, by using transmission lines only rather than switches or lumped components. The dual-band Class-E PA is implemented using Avago ATF-50189 GaAs p-HEMT. The PA exhibits a measured output power of 27.1 dBm and 25.7 dBm, a power gain of 6.1 dB and 4.7 dB, and a drain efficiency of 71.2 % and 60.1 % at 1.3 GHz and 2.1 GHz, respectively.

Resonant Frequency Estimation of Reradiation Interference at MF from Power Transmission Lines Based on Generalized Resonance Theory

  • Bo, Tang;Bin, Chen;Zhibin, Zhao;Zheng, Xiao;Shuang, Wang
    • Journal of Electrical Engineering and Technology
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    • v.10 no.3
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    • pp.1144-1153
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    • 2015
  • The resonant mechanism of reradiation interference (RRI) over 1.7MHz from power transmission lines cannot be obtained from IEEE standards, which are based on researches of field intensity. Hence, the resonance is ignored in National Standards of protecting distance between UHV power lines and radio stations in China, which would result in an excessive redundancy of protecting distance. Therefore, based on the generalized resonance theory, we proposed the idea of applying model-based parameter estimation (MBPE) to estimate the generalized resonance frequency of electrically large scattering objects. We also deduced equation expressions of the generalized resonance frequency and its quality factor Q in a lossy open electromagnetic system, i.e. an antenna-transmission line system in this paper. Taking the frequency band studied by IEEE and the frequency band over 1.7 MHz as object, we established three models of the RRI from transmission lines, namely the simplified line model, the tower line model considering cross arms and the line-surface mixed model. With the models, we calculated the scattering field of sampling points with equal intervals using method of moments, and then inferred expressions of Padé rational function. After calculating the zero-pole points of the Padé rational function, we eventually got the estimation of the RRI’s generalized resonant frequency. Our case studies indicate that the proposed estimation method is effective for predicting the generalized resonant frequency of RRI in medium frequency (MF, 0.3~3 MHz) band over 1.7 MHz, which expands the frequency band studied by IEEE.

Design and Fabrication of X-Band GaN TRM for a Radar (레이더용 X대역 GaN 반도체 송수신기 설계 및 제작)

  • Lim, Jae-Hwan;Jin, Hyung-Suk;Ryu, Seong-Hyun;Park, Jong-Sun;Kim, Tae-Hun;Lim, Duck-Hee
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.2
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    • pp.172-182
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    • 2014
  • In this paper, is is presented the result of design and fabrication for X band T/R module using in active array radar. The high power RF circuit was fabricated using GaN element, so that high power and high efficiency was fulfilled comparing with the previous T/R module that have under 50 W output power for X band. Designed X band T/R module demonstrated 200 W(53 dBm) peak power, 20 us pulse width with 0.4 dB pulse droop and 20 % duty cycle. And it has characteristics of 26 dB receive gain and 4.5 dB noise figure. The structure was applied to prevent serious damage of receive path and GaN HPA by transmitting power during trasmit time of a pulse radar.