• Electrical & Electronic Materials
• /
• v.9 no.8
• /
• pp.859-866
• /
• 1996

본 고에서는 절연재료에 대한 개괄적인 성질과 종류에 대해 간단히 설명하고 현재까지 개발되어 실용화 된 신 절연재료들을 소개하고자한다. 재료에 대한 연구는 절연재료 뿐만아니라 초전도재료, 극저온 재료등 특수한 성질을 갖거나 특수한 환경에서 특성을 유지할 수 있는 재료의 개발과 연구에 관심을 기울여야 할 시기라고 판단된다. 또한 기존의 재료에 대한 면밀한 재검토와 연구.고찰을 통해 보다 향상된 특성을 갖는 재료를 개발하는 것은 근본적으로 새로운 재료의 개발과 연구만큼이나 가치있는 일이라는 사실을 항상 명심해야 할 것이다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2001.10a
• /
• pp.724-728
• /
• 2001

In this study, the dielectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability. The dielectric breakdown characteristics origin in epoxy composites were examined and various effects of dielectric breakdown on epoxy composites were also discussed. As a result, first of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical. And the breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised, the electric field is concentrated, and the acceleration of electron and the growth of electron avalanche are early accomplished. In the case of filled specimens with treating silane, the breakdown strength become much higher since this suggests that silane coupling agent improves interfacial combination and relaxs electric field concentration. Finally, from the analysis of weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1%, the applied field value needed to be under 21.5㎹/cm.

• Proceedings of the Korean Society of Computer Information Conference
• /
• 2012.01a
• /
• pp.233-236
• /
• 2012

본 연구에서는 변성기용으로 사용되는 에폭시 복합체에 대해 절연 파괴 실험을 하고 그 데이터를 와이블 분포 확률을 이용해서 시뮬레이션을 하였다. 에스테르기의 기여에 의한 가교밀도 때문에 저온에서 경화제가 증가할수록 파괴강도가 증가하고 충진제를 첨가한 시료들의 파괴강도는 비충진 시료들의 경우 보다 더 낮았는데 이는 충진제 첨가가 계면을 형성하고 전하가 축적되어 분자의 이동도가 증가되고, 전계가 집중되어 전자 가속화 및 전자 사태의 성장이 초기에 도달되기 때문으로 사료된다. 또한 와이블 분포의 분석으로부터 허용 절연파괴 확률이 0.1[%]로 주어질 때, 인가 전계값은 21.5[kV/mm] 이하가 되어야 함을 확인하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2002.11a
• /
• pp.779-783
• /
• 2002

The dielectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability. As a result, first of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical. And the breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised, the electric field is concentrated, and the acceleration of electron and the growth of electron avalanche are early accomplished. In the case of filled specimens with treating silane, the breakdown strength become much higher since this suggests that silane coupling agent improves interfacial combination and relaxs electric field concentration. Finally, from the analysis of weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1%, the applied field value needed to be under 21.5MVcm.

• Proceedings of the KSME Conference
• /
• 2004.11a
• /
• pp.1213-1218
• /
• 2004

The present article reports extensive numerical results on the non-local characteristics of ultra-short pulsed laser-induced breakdowns of fused silica ($SiO_{2}$) by using the multivariate Fokker-Planck equation. The nonlocal type of multivariate Fokker-Planck equation is modeled on the basis of the Boltzmann transport formalism to describe the ultra-short pulsed laser-induced damage phenomena in the energy-position space, together with avalanche ionization, three-body recombination, and multiphoton ionization. Effects of electron avalanche, recombination, and multiphoton ionization on the electronic transport are examined. From the results, it is observed that the recombination becomes prominent and contributes to reduce substantially the rate of increase in electron number density when the electron density exceeds a certain threshold. With very intense laser irradiation, a strong absorption of laser energy takes place and an initially transparent solid is converted to a metallic state, well known as laser-induced breakdown. It is also found that full ionization is provided at intensities above threshold, all further laser energy is deposited within a thin skin depth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05b
• /
• pp.22-25
• /
• 2001

A thyristor switch circuit for capacitor discharge application, of which the equivalent circuit includes a resistor between cathode and gate of a reverse-conducting thyristor and an avalanche diode anti-parallel between its anode and gate to set thyristor tum-on voltage, is monolithically integrated by planar process with AVE double-implantation method. To ensure a lower breakdown voltage of the avalanche diode for thyristor tum-on than the break-over voltage of the thyristor, $p^+$ wells on thyristor p base layer are made by boron implantation/drive-in for a steeper doping profile with higher concentrations while rest p layers of thyristor and free-wheeling diode parts are formed with Al implantation/drive-in for a doping profile of lower steepness. The free-wheeling diode part is isolated from the thyristor part by formation of separated p-well emitter for suppressing commutation between them, which is achieved during the formation of thyristor p-base layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.396-399
• /
• 2003

4H-SiC un diodes with field limiting rings(FLRs) were fabricated and characterized. The dependences of reverse breakdown voltage on the number of FLRs, the distance between p-base main junction and first FLR, and activation temperatures, were investigated. Al and B ions were implanted and activated at high temperature to form p-base region and p+ region in the n-epilayer. We have obtained up to 1782V of reverse breakdown voltage in the un diode with two FLRs on loom thick epilayer. The differential on-resistances of the fabricated diode are $5.3m{\Omega}cm^2$ at $100A/cm^2$ and $2.7m{\Omega}cm^2$ at $1kA/cm^2$, respectively. All pn diodes with FLRs have higher avalanche breakdown voltages than that of diode without an FLR. Regardless of the activation temperature, the un diode with a FLR located 5um apart from main junction has the highest mean breakdown voltage around 1600V among the diodes with one ring. On the other hand, the pn diode with two rings showed different behavior with activation temperature. It reveals that high voltage SiC pn diodes with low on-resistance can be fabricated by using the FLR edge termination.

• Journal of Power Electronics
• /
• v.12 no.1
• /
• pp.19-23
• /
• 2012

This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.

• Electrical & Electronic Materials
• /
• v.8 no.2
• /
• pp.184-189
• /
• 1995

The electrical property of ultra thin PVA films(several hundreds .angs.-several .mu.m in thickness) formed by sphere bulb blowing technique, has been studied. The electrical conductivity of relatively thick films(>several thousands .angs.) has been very high and enhanced by the exposure either to high humidity of air or $NH_3$, which can be explained in terms of the role of ionic transport. The use of PVA films as NH$_{3}$ sensor is also proposed. In ultra thin PVA films less than 1500.angs., two conducting states ; high conducting and low conducting states, are observed. The nonlinear current-voltage characteristics in the low conducting state and the switching between these two states are also confirmed. These properties are discussed in terms of electronic conduction processes. The breakdown strength of the ultra thin PVA film is found to be very high(-30MV/cm), supporting the electron avalanche process in a thick polymer films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.208-212
• /
• 2003

Silicon transient voltage suppressors (TVSs) are clamping devices that limit voltage spikes by low impedance avalanche breakdown of a rugged silicon PN junction. They are used to protect sensitive components from electrical overstress such as that caused by induces lightning, inductive load switching and electrostatic discharge. In this paper, we present static and dynamic characteristics of TVS diode using thermal analysis simulation software. And also, it is presented that the thermal dissipation characteristics of TVS diode in the transient state.