• Journal of Magnetics
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• v.7 no.3
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• pp.80-93
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• 2002

The role of magnetic anisotropy of the antiferromagnetic layer on the magnetization process of exchange coupled polycrystalline ferromagnetidantiferromagnetic bilayers is discussed. In order to elucidate the magnetic torque response of Ni-Fe/Mn-Ir bilayers, the single spin ensemble model is newly introduced, taking into account the two-dimensionally random distribution of the magnetic anisotropy axes of the antiferromagnetic grains. The mechanism of the reversible inducement of the exchange anisotropy along desirable directions by field cooling procedure is successfully explained with the new model. Unidirectional anisotropy constant, J$k$, of polycrystalline Ni-Fe/Mn-Ir and Co-Fe/Mn-Ir bilayers is investigated as functions of the chemical composition of both the ferromagnetic layer and the antiferromagnetic layer. The effects of microstructure and surface modification of the antiferromagnetic layer on JK are also discussed. As a notable result, an extra large value of J$k$, which exceeds 0.5 erg/cm$^2$, is obtained for $Co_{70}Fe_{30}Mn_{75}Ir_{25}$ bilayer with the ultra-thin (50${\AA}$∼100${\AA}$) Mn-Ir layer. The exchange anisotropy of $Co_{70}Fe_{30}$ 40 ${\AA}/Mn_{75}Ir_{25}$ 100 ${\AA}$ bilayer is stable for thermal annealing up to $400{^{\circ}C}$, which is sufficiently high for the application of spin valve magnetoresistive devices.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.91-95
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• 1998

Exchange anisotropy between IrMn antiferromagnetic layer and NiFe ferromagnetic layer has been studied in IrxMn(100-x)/NiFe/Buffr/Si(100) films deposited by D. C. magnetron sputtering method. Among Zr, Ta, and Cu used as buffer layer, Zr and Ta enhanced the fcc(111) texture of NiFe and IeMn layer, but Cu did not affect microstructure of those layer. Strong fcc(111) texture of IrMn layer was confirmed to be the origin of exchange anisotropy of IrMn. Ir composition control in IrMn layer showed that {{{{ gamma -phase}}}} IrMn is stabilized between 10 and 30 at % Ir, an 21 at. % Ir in IrMn layer was optimum composition that showed maximum exchange anisotropy field. above 200 ${\AA}$ thickness of IrMn, antiferromagnetic property is stabilzed to show saturated exchange anisotropy field. Based pressure was confirmed to be critical requisite in IrMn-based spin-valve GMR system.

• Journal of Magnetics
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• v.10 no.2
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• pp.44-47
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• 2005

The oscillatory interlayer exchange coupling (IEC) has been shown in pinned $[CoFe/Pt(t_{pt})/CoFe]/IrMn$ multi-layers with perpendicular anisotropy. The period of oscillation corresponds to about 2 monolayers of Pt. The oscillatory behavior of IEC depending on the nonmagnetic metallic Pt thickness is thought to be related the antiferromagnetic ordering induced by IrMn layer. Oscillatory IEC as function of insulating NiO thickness has been observed in $[Pt/CoFe]_4/NiO(t_{NiO})/[CoFe/Pt]_4$ multilayers. The effect of N (number of bilayer repeats) upon the magnetic property of [Pt/CoFe]N/IrMn is also studied.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.04a
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• pp.120-121
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• 2002

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.60-61
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.62-63
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.46-47
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• 2001

• Journal of the Korean Magnetics Society
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• v.18 no.6
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• pp.232-236
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• 2008

Dependence of interlayer exchange coupling on antiferromagnetic IrMn thickness, thermal stability, and parallel anisotropy angle in perpendicular anisotropy [CoFe/Pt/CoFe]/IrMn multilayers was investigated. The magnetic property of [CoFe($10{\AA}$)/Pt($8{\AA}$)/CoFe($10{\AA}$)] induced by antiferromagnetic ordering of IrMn layer was maintained a stable perpendicular anisotropy up to $250^{\circ}C$ and from $7{\AA}$ to $160{\AA}$ of IrMn thickness. The value of interlayer exchange coupling of [CoFe/Pt/CoFe]/IrMn multilayers with perpendicular anisotropy increased to 1.5 times at anisotropy angle of $60^{\circ}$ more than of $0^{\circ}$. On the other side, the interlayer exchange coupling at anisotropy angle of $90^{\circ}$ was $\infty$ Oe, it was likely diverted to a parallel shape magnetization.

• Journal of the Korean Magnetics Society
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• v.9 no.3
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• pp.166-172
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• 1999

The magnetic properties between Mn-Ir antiferromagnetic layer and Ni-Fe ferromagnetic layer have been investigated in Mn-Ir/Ni-Fe/Zr on Si wafer formed by magnetron sputtering. Mn-Ir was sputtered from Ir chips and Mn target using D.C. power, Ni-Fe and Zr were deposited from Ni-Fe and Zr targets using D.C. power under Ar atmosphere. We studied the dependence of the magnetic properties on Ir content of Mn-Ir layer for Mn-Ir/Ni-Fe bilayer, and obtained the highest $H_ex$ of 219 Oe and the low $H_c$ of 30 Oe. And then focused on the effect of base pressure for Mn-Ir containing multilayers. Our experimental data showed that if the base pressure is higher than $3.0{\times}10^{-6}\;Torr$, the exchange anisotropy of Mn-Ir/Ni-Fe/Zr disappeared probably due to the grain refining of Mn-Ir film. In addition we have studied the dependence of Zr buffer on magnetic properties of Mn-Ir/Ni-Fe/Zr multilayers, and observed that Zr buffer about (111) texture and lower $H_c$ of Mn-Ir/Ni-Fe/Zr multilayer.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.291-295
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• 1999

$NiFe/Co/Al_2O_3/Co/IrMn$ tunneling junctions were grown on (100)Si wafer and their spin-valve tunneling magnetoresistance (TMR) was studied. The tunneling junctions were grown by using a 5-gun RF/DC magnetron sputter. $Al_2O_3$ barrier layer was formed by exposing Al layer to oxygen atmosphere at 6$0^{\circ}C$ for 72 hours. Strong exchange coupling interaction is observed between the ferromagnetic Co and the antiferromagnetic IrMn of Co/IrMn bilayer when IrMn is 100$\AA$ thick. $NiFe(183\;{\AA})/Co(17\;{\AA})/Al_2O_3(16\;{\AA})/Co(100\;{\AA})/IrMn(100\;{\AA})$ tunneling junction shows best TMR ratio of about 10% in the applied magnetic field range of $\pm$20 Oe. The TMR ratio is improved about 23% and electrical resistance is decreased about 34% when annealed at 200 $^{\circ}C$ for 1 hour in magnetic field of 330 Oe, parallel to the bottom electrode. With increasing the active area of junction the TMR ratio increases while electrical resistance decreases.