• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• Applied Science and Convergence Technology
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• 제25권6호
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• pp.133-137
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• 2016

The surface treatment of cover glass for conversion efficiency of photovoltaic cell is important to reduce reflectivity and to increase the incident light. In this work, random textured anti glare (RTAG) glass was prepared by wet surface coating method. Optical properties due to the changes of surface morphology of RTAG glass were compared and conversion efficiency of photovoltaic cell was researched. Grain size and changes of surface morphologies formed with surface etching time greatly affected optical transmittance and transmission haze. Current density (Jsc) were high at the condition when surface morphologies reflection haze were low and transmission haze were high. Jsc was $40.0mA/cm^2$ at glancing angle of $90^{\circ}$. Incidence light source was strongly influenced by surface treatment of cover glass at high incidence angle but was hardly affected light source at the low angle of incidence.

• 전자공학회논문지A
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• 제30A권10호
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• pp.33-40
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• 1993

A reflection type 16x8 S-SEED array from LP(Low Pressure)-MODVD-grown GaAs/AlGaAs extremely shallow quantum well(ESQW) structures, with 4% Al fraction, has been fabricated. Its intrinsic region consists of 50 pairs of alternating 100.angs. GaAs and 100.angs. $Al_{0.04}$Ga$_{0.96}$As layers. A multilayer reflector stack of $Al_{0.04}$/Ga$_{0.96}$ As(599$\AA$)/AlAs(723$\AA$) was incorporated for the reflection plane below the p-i-n structures. The device processing after the MOCVD growth includes the mesa etching, isolation etching, insulator deposition, p & n metallization, and AR(Anti-Reflection) coating. For switching characteristics of the S-SEED in the form of p-i-n ESQW diode, the maximum optical negative resistance was observed at 856nm. Reflectance measurements showed a change from 15.6% to 43.3% for +0.9V to -6V bias. The maximum contrast ration of the S-SEED array was 2.0 and all the 128 devices showed optical bistability with contrast ratios over 2.4 at 5V reverse bias.

• 한국태양에너지학회 논문집
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• 제26권1호
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• pp.57-64
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• 2006

Cr-CrO cermet solar selective coatings with a double cermets layer film structure were prepared using a special direct current (dc) magnetron sputtering technology. The typical films structures from surface to bottom substrate were measured to be an $Al_2O_3$ anti-reflection layer on a double Cr-CrO cermet layer on an Al metal infrared reflection layer. Optical properties of optimized Cr-CrO cermet solar selective coating were absorptance (${\alpha}$) = 0.95 and emittance (${\varepsilon}$) = 0.10 ($100^{\circ}C$). Atomic force microscopy (AFM) image showed that Cr-CrO cermet film was very smooth and their grain size was also very small The results of thermal stability test showed that the Cr-CrO cermet solar selective coatings were stable for use at temperature of $400^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.72.2-72.2
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• 2010

Nowadays, the crystalline Si Solar cell are expected for economical renewable energy source. The cost of the crystalline Si solar cell are decreasing by improvement of its efficiency and decrease of the cost of the raw Si wafers for Solar cells. This Si wafer based crystalline Si solar cell is the verified technology from several decade of its history. Now, I will introduce one method that can be upgrade the efficiency by using simple and economical method. The name of this method is Rear Side Etching(RSE). The purpose of rear side etching is the elimination of n+ layer of rear side and increase of the flatness. The effects of rear side etching are the improvement of Voc and increase of efficiency by reducement series resistance and forming of uniform BSF. The experimental procedure for rear side etching is very simple. After anti-reflection coating on solar cell wafer, Solar cell wafer is etched by the etching chemical that react with only rear side not front side. This special chemical is no harmful to anti-reflection coating layer. It can only etched rear side of solar cell wafer. We can use etching image by optical microscope, minority carrier life time by WCT 120, SiNx thickness and refractive index by ellipsometer, cell efficiency for the RSE effect measurement. The key point of rear side etching is development of etching process condition that react with only rear side. If we can control this factor, we can achieve increase of solar cell efficiency very economically without new device.

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.121-125
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• 2011

Ribbon silicon solar cells have been investigated because they can be produced with a lower material cost. However, it is very difficult to get good texturing with a conventional acid solution. To achieve high efficiency should be minimized for the reflectance properties. In this paper, acid vapor texturing and anti-reflection coating of $SiN_x$ was applied for EFG Ribbon Si Wafer. P-type ribbon silicon wafer had a thickness of 200 ${\mu}m$ and a resistivity of 3 $\Omega-cm$. Ribbon silicon wafers were exposed in an acid vapor. Acid vapor texturing was made by reaction between the silicon and the mixed solution of HF : $HNO_3$. After acid vapor texturing process, nanostructure of less than size of 1 ${\mu}m$ was formed and surface reflectance of 6.44% was achieved. Reflectance was decreased to 2.37% with anti-reflection coating of $SiN_x$.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.154-157
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• 2011

Hydrogenated silicon nitride deposited by LF-PECVD is commonly used for anti-reflection coating and passivation in silicon solar cell fabrication. The deposition of the optimized silicon nitride on the surface is elemental in crystalline silicon solar cell. In this work, the carrier lifetimes were measured while the thicknesses of $SiN_x$ were changed from 700 ${\AA}$ to 1150 ${\AA}$ with the gas flow of $SiH_4$ as 40 sccm and $NH_3$ as 120 sccm,. The carrier lifetime enhanced as the thickness of $SiN_x$ increased due to improved passivation effect. To study the characteristics of $SiN_x$ with various gas ratios, the gas flow of $NH_3$ was changed from 40 sccm to 200 sccm with intervals of 40 sccm. The thickness of $SiN_x$ was fixed as 1000 ${\AA}$ and the gas flow of $SiH_4$ as 40 sccm. The refractive index of SiNx and the carrier lifetime were measured before and after heat treating at $650^{\circ}C$ to investigate their change by the firing process in solar cell fabrication. The index of refraction of SiNx decreased as the gas ratios increased and the longest carrier lifetime was measured with the gas ratio $NH_3/SiH_4$ of 3.

• 접착 및 계면
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• 제21권4호
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• pp.143-155
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• 2020

Sol-Gel 공정을 통해서 제조되는 유-무기 하이브리드 화합물들은 방청 코팅, 방빙 코팅(Anticing), 자가 세정 코팅, 반사 방지 코팅 등과 같은 기능성 코팅 재료로 널리 사용되어져 왔다. 특히 소수성 코팅 표면을 제조하기 위해서는 코팅표면의 표면에너지가 낮고 코팅 표면의 조도를 제어가 요구된다. 표면에너지와 표면 조도를 조절하는 전형적인 공정은 in-situ fabrication 공정, 'Pre-fluorinating/Post-roughening', 'Pre-roughening/ Post-fluorinating이다. 본 연구에서는 in-situ fabrication 공정인 Particle-Binder 공정을 이용해서 소수성 코팅표면을 제조하였다. 3관능기 유기실란화합물과 불소 함유 유기실란 화합물과의 가수분해 및 축합반응을 통해 제조된 불소함유 유-무기 하이브리드를 바인더로 사용하여서 무기물 나노입자와 혼합하여 소수성 코팅액을 제조하고 유리 기재 위에 스핀코팅 후 열건조하여서 코팅막을 제조하였다. 바인더인 유-무기 하이브리드 화합물의 불소 함유 실란화합물의 첨가량, 첨가순서, 무기물 나노입자 첨가량에 따른 코팅막의 물성 변화를 조사하였다. 분석결과 불소 함량이 10 wt%인 유-무기 하이브리드 화합물(GPTi-HF10)을 바인더로 사용하여서 제조된 코팅막이 가장 소수성이 우수하였으며 수접촉각은 (107.52 ± 1.6°), 이 바인더와 무기물 나노입자의 무게비가 1:3인 경우(GPTi-HF10-MS 3.0)에 가장 높은 수접촉각(130.84±1.99°)을 나타내었다.

• 한국안광학회지
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• 제16권3호
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• pp.237-245
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• 2011

목적: 안경 렌즈에 물리적, 화학적 자극이 반복적으로 가해졌을 때 렌즈 코팅막의 기능에는 어떠한 변화가 나타나는 지를 알아보고자 하였다. 방법: CR-39 재질의 안경 렌즈 표면에 물리적, 화학적 자극으로 테이프 떼기, 아세톤 문지르기, 아세톤에 침윤 및 증류수에 침윤하기를 시행한 후 렌즈 표면의 변화, 광투과율 변화, 김서림 시간 변화 및 손상된 렌즈 표면의 안정성 여부를 측정하였다. 결과: 하드 코팅의 기능 변화를 알아보기 위한 표면관찰시 아세톤에 침윤한 안경 렌즈만이 침윤 30분 후부터 표면의 변화가 나타났다. 반사방지 코팅의 기능 변화를 알아보기 위한 광투과율 측정시 증류수에 180분간 침윤한 안경 렌즈는 1% 정도의 미세한 감소를 보인 반면 아세톤에 침윤시킨 렌즈에서는 침윤 60분 후 반사방지 코팅의 기능이 거의 소실됨을 알 수 있었다. 안티포그 코팅의 기능 변화를 알아보기 위한 김서림 지속시간 측정시 아세톤에 침윤시킨 안경 렌즈에서 김서림 지속시간이 증가하였다. 자극에 의해 손상받은 코팅막의 안정성을 알아보았을 때 테이프로 떼어내기, 아세톤으로 문지르기, 증류수에 침윤 및 아세톤에 침윤시킨 렌즈 표면의 코팅 손상이 관찰되었다. 결론: 반복적인 물리적, 화학적 자극으로 인하여 안경 렌즈의 코팅 변화가 관찰되었으므로 안경 조제 과정 중이나 안경 착용 시 이에 대한 주의가 요구된다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.28.1-28.1
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• 2010

다양한 반도체 재료 중 ZnO는 3.2 eV의 넓은 밴드 갭을 통한 고효율의 단파장 전기광학 소자 응용 개발에 대한 연구가 진행중에 있으며, 60 meV의 넓은 엑시톤 결합 에너지로 인해 높은 기계적, 열적 안정성을 가진다. 또한 높은 투과성과 굴절율(n=2)을 가지며 이방성 성장을 통한 텍스처 코팅이 가능함으로 PV(photovoltaics)용 유전체 ARC(anti-reflection coating) 재료로 유망하다. 텍스처된 표면은 빛을 차단시키며, 광대역에서 반사를 억제 시킨다. 또한 나노 구조를 통한 나노 다공성 표면은 광대역에서 빛을 모으는 장점이 있으며 태양전지 효율을 극대화 시킬 수 있다. 본 연구에서는 저온 공정이 가능한 hydrothermal 방법으로 다양한 ZnO 나노 구조를 합성하였다. 사용된 합성 재료로 사용되는 zinc nitrate($Zn(NO_3)_2.6H_2O$), hexamethyltetramine(HMT, $C_6H_{12}N_4$)의 농도 및 합성 온도 변화를 통해 다양한 나노구조(나노선, 나노막대, 나노시트 등)의 형태 및 크기를 제어하였다. 이러한 구조적인 변화를 토대로 텍스처된 다공성 나노구조를 형성시키고, 그 형상과 크기 차이에 따른 AR 특성을 평가하였다. ZnO 나노 구조의 결정학적 특성은 XRD(x-ray diffractometer)를 이용하여 분석하였으며, SEM(scanning electron microscope)을 통해 나노 구조의 모양과 크기를 관찰하였다. 또한 UV-Vis spectrophotometer를 통해 나노 구조의 흡수도와 반사도를 측정하였다.