• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.961-964
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• 2003

This paper presents the temperature annealing effect on the dark current of the InGaAs waveguide photodiodes, which are developed for high-speed optical receivers. The interesting experimental phenomena were observed that the dark current is significantly decreased and the breakdown voltage is slightly increased after annealing at $250^{\circ}C$ whereas the dark current and the breakdown voltage are almost constant after annealing at $200^{\circ}C$. Based on the experimental results, the long-term annealing is more effective for the dark current improvement than the conventional curing process.

• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.677-680
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• 2012

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1990년도 한국자동제어학술회의논문집(국내학술편); KOEX, Seoul; 26-27 Oct. 1990
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• pp.779-782
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• 1990

Recently batch type cold rolling processes have been replaced by continuous annealing type processes for cold rolled sheets of mild steel and high strength steel in order to obtain higher productivity, labor saving. In the continuous annealing line, it is very important to maintain the target steel strip temperature at the exit side of each furnace. The automation system of continuous annealing line is based on a hierachical composition. This paper shows how to preset the set value of furnace temperature control for the heating section in a continuous annealing line. Saying in other words, this paper presents the development of an adaptive control approach to control the exit strip temperature in the continuous annealing line. There are three parts in this approach; one is a process modelling and another is recursive parameter estimation and the other is a design of temperature controller.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1999년도 추계학술대회 논문집 - 한국공작기계학회
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• pp.530-535
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• 1999

In recently, annealing process of cold rolled sheet tend to change to continuous annealing process for improving quality, saving yield. In the meantime as demand for various kind and small lot of products has been increasing, batch annealing has been appreciated for its small restriction for the operation. So, we tested on the effect for the proper heating temperatures, heating time of cycle, cooling time and total cycle time in this annealing process of hi tensile strength steel for automobile. As a result of several investigation. we confirmed for the following characteristics; In this process, we knew that 68$0^{\circ}C$ is suitable for this heating temp. cycle heating time of 38 Hr, cooling time of 31 Hr and total cycle time of 70 Hr. Still more, we could know that it is proper for cold rolling before annealing to be managed by 7 pass because of the act on high pressure.

• 한국생산제조학회지
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• 제7권2호
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• pp.108-114
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• 1998

Development on the mechanical properties of steel sheet for the automobile body panel is very important in the BAF(Batch annealing furnace) annealing process. Because of the heat treatment method in the BAF, mechanical properties was decided on the heat treatment method of the coil. So, we tested on the development of mechanical properties according to heat treatment method at the annealing furnace using the Ax(H$_2$75%, $N_2$25%) atmospheric gas and the HNx(H$_2$4%, $N_2$96%) atmospheric gas. As a result of several investigations. We confirmed the following characteristics ; mechanical properties was changed under the influence of the annealing cycle, the heat treatment method and the atmospheric gas. And, elongation in the HNx BAF was better than the Ax BAF. Finally, most important thing in the BAF is using of proper annealing cycle in order to get a good quality.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.366-370
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• 2014

ZnO:Al transparent conductive films were deposited on glass substrates by RF magnetron sputtering technique and annealed by rapid thermal annealing system. The influence of annealing time on the structural, electrical, and optical properties of ZnO:Al thin films was investigated by atomic force microscopy, X-ray diffraction, Hall method and optical transmission spectroscopy. As the annealing time increases from 0 to 5 min, the crystallinity is improved, the root main square surface roughness is decreased and the sheet resistance is decreased. The lowest sheet resistance of ZnO:Al thin film is 90 ohm/sq. The reduction of sheet resistance is caused by increasing carrier concentration due to substituent Al ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a blue-shift due to Burstein-Moss effect with increasing annealing time.

• 열처리공학회지
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• 제24권4호
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• pp.199-202
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• 2011

Ga doped ZnO thin films were deposited with RF magnetron sputtering on glass substrate without intentional substrate heating and then the effect of post deposition annealing temperature on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes in a vacuum of $1{\times}10^{-3}$ Torr and the vacuum annealing temperatures were 150 and $300^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $300^{\circ}C$ have the highest optoelectrical performance in this study.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.383-386
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• 1988

In MOS integrated circuits, annealing after oxidation process is necessary to improve physical properties of silicon dioxide. With subsequent annealing in inert gases such as nitrogen or argon, and excess silicon bond is allowed time to complete the oxidation and surface charge density is reduced. In this paper, we will present effects of the rapid thermal annealing on silicon dioxide. In order to evaluate characteristics of silicon dioxide, we analyzed C-V curve dependent on annealing time and temperature, and presented variation of fixed oxide charge.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.209-213
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• 2000

Microstructural changes of AlOOH doped UO$_2$pellet after annealing up to 216h have been observed and they were compared with those of the standard pellet. Grain and pore size of UO$_2$pellet increased with the addition of AlOOH and its effect was still validated during annealing. Densification rate was reduced by the addition of AlOOH and it was attributed to coarsened pores with spherical shape. Grain and pore growth was stopped and density increase was the least after 144h of annealing. The variation of pore size resulting from annealing has a linear relationship with that of grain size.

• 한국분말재료학회지
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• 제13권1호
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• pp.25-32
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• 2006

The alumina dispersion-strengthened (DS) C15715 Cu alloy fabricated by a powder metallurgy route was annealed at temperatures ranging from $800^{\circ}C\;to\;1000^{\circ}C$ in the air and in vacuum. The effect of the annealing on microstructural stability and room-temperature mechanical properties of the alloy was investigated. The microstructure of the cold rolled OS alloy remained stable until the annealing at $900^{\circ}C$ in the air and in vacuum. No recrystallization of original grains occurred, but the dislocation density decreased and newly formed subgrains were observed. The alloy annealed at $1000^{\circ}C$ in the air experienced recrystallization and grain growth took place, however annealing in vacuum at $1000^{\circ}C$ did not cause the microstructural change. The mechanical property of the alloy was changed slightly with the annealing if the microstructure remained stable. However, the strength of the specimen that was recrystallized decreased drastically.