• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.1
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• pp.1-7
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• 2021

ε-Ga2O3, a metastable phase of Ga2O3, has excellent compatibility with substrates having a hexagonal structure or a quasi-hexagonal structure, so that a film having a relatively lower surface roughness and defect density than β-Ga2O3 can be obtained easily. Accordingly, we attempted to fabricate a high-quality β-Ga2O3 film with a low surface roughness and defect density using the property of phase transition to β-Ga2O3 when ε-Ga2O3 is annealed at a high temperature. For this, the growth of high-quality ε-Ga2O3 films must be preceded. In this study, the optimal flow rate was investigated by analyzing the structural and morphological characteristics of the ε-Ga2O3 film according to the supplied precursor ratio. In addition, the annealing condition and the effect of β-Ga2O3 mixed in the ε-Ga2O3 film on the crystallinity of β-Ga2O3 after phase transition were also investigated.

• Journal of Powder Materials
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• v.28 no.4
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• pp.293-300
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• 2021

We investigate the effect of phosphorous content on the microstructure and magnetic properties of Fe_83.2Si_5.33-0.33xB_10.67-0.67xP_xCu_0.8 (x = 1-4 at.%) nanocrystalline soft magnetic alloys. The simultaneous addition of Cu and P to nanocrystalline alloys reportedly decreases the nanocrystalline size significantly, to 10-20 nm. In the P-containing nanocrystalline alloy, P atoms are distributed in an amorphous residual matrix, which suppresses grain growth, increases permeability, and decreases coercivity. In this study, nanocrystalline ribbons with a composition of Fe_83.2Si_5.33-0.33xB_10.67-0.67xP_xCu_0.8 (x = 1-4 at.%) are fabricated by rapid quenching melt-spinning and thermal annealing. It is demonstrated that the addition of a small amount of P to the alloy improves the glass-forming ability and increases the resistance to undesirable Fe_x(B,P) crystallization. Among the alloys investigated in this work, an Fe_83.2Si₅B₁₀P₁Cu_0.8 nanocrystalline ribbon annealed at 460℃ exhibits excellent soft-magnetic properties including low coercivity, low core loss, and high saturation magnetization. The uniform nanocrystallization of the Fe_83.2Si₅B₁₀P₁Cu_0.8 alloy is confirmed by high-resolution transmission electron microscopy analysis.

• Applied Chemistry for Engineering
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• v.33 no.6
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• pp.613-617
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• 2022

The equipment for fabricating the large-area PTFE nanofiber coated-PTFE foam filter for use as filtration parts of the baghouse that removes particulate matter (PM) in industrial sites was designed and manufactured in this study. The PTFE nanofiber was coated on a commercial PTFE foam filter to increase its PM collection efficiency. The equipment and fabrication processes using a roll-to-roll system were proposed to continuously coat PTFE nanofibers on the surface of the PTFE foam filter. The electrospinning and annealing parts were designed and made by optimizing the equipment for the roll-to-roll system. The surface morphology, composition, and filtration characteristics of the large-area filter fabricated by this equipment were confirmed. PTFE nanofibers were uniformly coated on the large-area filter, and the PTFE nanofiber coated-PTFE foam filter showed PM_2.5 collection efficiency of 91.79% and an appropriate pressure drop of 62 Pa with a face velocity of 1 m/min at 280 ℃.

• Applied Chemistry for Engineering
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• v.33 no.1
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• pp.58-63
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• 2022

Graphite has been used as an anode material for lithium-ion batteries for the past 30 years due to its low de-/lithiation voltage, high theoretical capacity of 372 mAh/g, low price, and long life properties. Recently, all-solid-state lithium-ion batteries (ASSLB), which are composed of inorganic solid materials with high stability, have received great attention as electric vehicles and next-generation energy storage devices, but research works on graphite that works well for ASSLB systems are insufficient. Therefore, we induced the performance improvement of ASSLB anode electrode graphite material by removing the amorphous carbon present in the carbon material surface, acting as a resistive layer from the graphite. As a result of X-ray diffraction (XRD) analysis using heat treated graphite in air at 400, 500, and 600 ℃, the full width at half maximum (FWHM) at (002) peak was reduced compared to that of bare graphite, indicating that the crystallinity of graphite was improved after heat treatment. In addition, the discharge capacity, initial coulombic efficiency (ICE) and cycle stability increased as the crystallinity of graphite increased after heat treatment. In the case of graphite annealed in air at 500 ℃, the high capacity retention rate of 331.1 mAh/g and ICE of 86.2% and capacity retention of 92.7% after 10-cycle measurement were shown.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.41-45
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• 2021

In this study, in order to secure the high reliability of the memristor, we adopted a patterned lithium filament seed layer as the main agent for resistive switching (RS) characteristic on the 30 nm thick ZrO₂ thin film at the device manufacturing stage. Lithium filament seed layer with a thickness of 5 nm and an area of 5 ㎛ × 5 ㎛ were formed on the ZrO₂ thin film, and various electrode areas were applied to investigate the effect of capacitance on filament type memristive behavior in the parallel memristive circuit of memristor and capacitor. The RS characteristics were measured in the samples before and after 250℃ post-annealing for lithium metal diffusion. In the case of conductive filaments formed by thermal diffusion (post-annealed sample), it was not available to control the filament by applying voltage, and the other hand, the as-deposited sample showed the reversible RS characteristics by the formation and rupture of filaments. Finally, via the comparison of the RS characteristics according to the electrode area, it was confirmed that capacitance is an important factor for the formation and rupture of filaments.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.2
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• pp.45-50
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• 2022

Ga₂O₃ thin films were grown on n-type Si substrates at various growth temperatures of 500, 550, 600, 650 and 700℃. The Ga₂O₃ thin films grown at 500℃ and 550℃ were characterized as featureless flat surface. Grown at higher temperatures (600, 650, and 700℃) showed very rough surface morphology. To figure out the annealing effect on the thin films grown at relatively low temperatures (500, 550, 600, 650 and 700℃), the Ga₂O₃ films were thermally treated at 900℃ for 10 minutes. Crystal structure of the Ga₂O₃ films grown at 500 and 550℃ were changed from amorphous to polycrystalline structure with flat surface. Ga₂O₃ film grown at 550℃ was chosen for the fabrication of a Schottky barrier diode (SBD). Electrical properties of the SBDs depend on the thermal treatment were evaluated. A MSM type photodetector was made on the low temperature grown Ga₂O₃ thin film. The photocurrent for the illumination of 266 nm wavelength showed 5.32 times higher than dark current at the operating voltage of 10 V.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.85-89
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• 2021

AlGaN-based UV-C light-emitting diodes (LEDs) were applied for p-type activation by electrochemical potentiostatic activation (EPA). The p-type activation efficiency was increased by removing hydrogen atoms through EPA treatment using a neutral Mg-H complex that causes high resistance and low conductivity. A neutral Mg-H complex is decomposed into Mg^- and H⁺ depending on the key parameters of solution, voltage, and time. The improved hole carrier concentration was confirmed by secondary ion mass spectroscopy (SIMS) analysis. This mechanism eventually improved the internal quantum efficiency (IQE), the light extraction efficiency, the leakage current value in the reverse current region, and junction temperature, resulting in better UV-C LED lifetime. For systematic analysis, SIMS, Etamax IQE system, integrating sphere, and current-voltage measurement system were used, and the results were compared with the existing N₂-annealing method.

• Membrane Journal
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• v.32 no.2
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• pp.116-125
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• 2022

In this experiment, an α-Al₂O₃ ceramic hollow fiber was used as a support, and a hydrogen membrane plated with Pd and Pd-Ag was manufactured through electroless plating. The Pd-Ag membrane was annealed at 500℃ for 10 h to form an alloy of Pd and Ag. It was confirmed that it became a Pd-Ag alloy through EDS (Energy Dispersive X-ray Spectroscopy) analysis. Also, the thickness of the Pd, Pd-Ag plating layer was measured to be about 8.98 and 9.29 ㎛ through SEM (Scanning Electron Microscope) analysis respectively. Hydrogen permeation experiment was performed using the H₂ gas and mixed gas (H₂ and N₂) in the range of 350~450℃ and 1-4 bar using the prepared hydrogen membrane. Under the H₂ gas condition, the Pd and Pd-Ag membrane has a flux of up to 21.85 and 13.76 mL/cm²·min and also separation factors of 1216 and 361 were obtained in the mixed gas at 450℃ and 4 bar conditions respectively.

• Advances in nano research
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• v.12 no.6
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• pp.605-616
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• 2022

We prepared two samples of ultrafine ferrihydrite (FH) nanoparticle ensembles of quite a different origin. First is the biosynthesized sample (as a product of the vital activity of bacteria Klebsiella oxytoca (hereinafter marked as FH-bact) with a natural organic coating and negligible magnetic interparticle interactions. And the second one is the chemically synthesized ferrihydrite (hereinafter FH-chem) without any coating and high level of the interparticle interactions. The interparticle magnetic interactions have been tuned by modifying the nanoparticle surface in both samples. The coating of the FH-bact sample has been partially removed by annealing at 150℃ for 24 h (hereinafter FH-annealed). The FH-chem sample, vice versa, has been coated (1.0 g) with biocompatible polysaccharide (arabinogalactan) in an ultrasonic bath for 10 min (hereinafter FH-coated). The changes in the surface properties of nanoparticles have been controlled by XPS. According to the electron microscopy data, the modification of the nanoparticle surface does not drastically change the particle shape and size. A change in the average nanoparticle size in sample FH-annealed to 3.3 nm relative to the value in the other samples (2.6 nm) has only been observed. The estimated particle coating thickness is about 0.2-0.3 nm for samples FH-bact and FH-coated and 0.1 nm for sample FH-annealed. Mössbauer and magnetization measurements are definitely shown that the drastic change in the blocking temperature is caused by the interparticle interactions. The experimental temperature dependences of the hyperfine field hf>(T) for samples FH-bact and FH-coated have not revealed the effect of interparticle interactions. Otherwise, the interparticle interaction energy E_int estimated from the hf>(T) for samples FH-chem and FH-annealed has been found to be 121k_B and 259k_B, respectively.