• 제목/요약/키워드: annealing.

검색결과 5,937건 처리시간 0.027초

열처리 온도에 따라서 절연체, 반도체, 전도체의 특성을 갖는 GZO 박막의 특성연구 (Study on GZO Thin Films as Insulator, Semiconductor and Conductor Depending on Annealing Temperature)

  • 오데레사
    • 한국재료학회지
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    • 제26권6호
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    • pp.342-346
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    • 2016
  • To observe the bonding structure and electrical characteristics of a GZO oxide semiconductor, GZO was deposited on ITO glasses and annealed at various temperatures. GZO was found to change from crystal to amorphous with increasing of the annealing temperatures; GZO annealed at $200^{\circ}C$ came to have an amorphous structure that depended on the decrement of the oxygen vacancies; increase the mobility due to the induction of diffusion currents occurred because of an increment of the depletion layer. The increasing of the annealing temperature caused a reduction of the carrier concentration and an increase of the bonding energy and the depletion layer; therefore, the large potential barrier increased the diffusion current dna the Hall mobility. However, annealing temperatures over $200^{\circ}C$ promoted crystallinity by the defects without oxygen vacancies, and then degraded the depletion layer, which became an Ohmic contact without a potential barrier. So the current increased because of the absence of a potential barrier.

Real-Time Observation of Temperature-Dependen Strain in Poly (3-hexylthiophene) Crystals in a Mixed Donor and Acceptor Thin Film

  • 이현휘;김효정
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.163-163
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    • 2012
  • We observed strain evolution of P3HT crystals in P3HT:PCBM films and the effect of Al electrode on the evolution during real time annealing process. Based on simple assumptions, both relaxed lattice parameters and thermal expansion coefficient could be quantitatively determined. P3HT:PCBM films displayed tensile strain in as-prepared samples regardless of the presence of an Al layer. In the absence of Al layer, P3HT crystals showed only strain relaxation at an annealing temperature of $180^{\circ}C$. Meanwhile In the presence of an Al layer, the strain was relaxed and changed to compressive strain at around 120C annealing temperature, which indicated a tightening of the thiophene ring packing. These behaviors support the improved performance of devices fabricated by post annealing process.

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Optimized Local Relocation for VLSI Circuit Modification Using Mean-Field Annealing

  • Karimi, Gholam Reza;Verki, Ahmad Azizi;Mirzakuchaki, Sattar
    • ETRI Journal
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    • 제32권6호
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    • pp.932-939
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    • 2010
  • In this paper, a fast migration method is proposed. Our method executes local relocation on a model placement where an additional module is added to it for modification with a minimum number of displacements. This method is based on mean-field annealing (MFA), which produces a solution as reliable as a previously used method called simulated annealing. The proposed method requires substantially less time and hardware, and it is less sensitive to the initial and final temperatures. In addition, the solution runtime is mostly independent of the size and complexity of the input model placement. Our proposed MFA algorithm is optimized by enabling module rotation inside an energy function called permissible distances preservation energy. This, in turn, allows more options in moving the engaged modules. Finally, a three-phase cooling process governs the convergence of problem variables called neurons or spins.

유전 알고리즘과 시뮬레이티드 어닐링이 적용된 적응 랜덤 신호 기반 학습에 관한 연구 (A Study on Adaptive Random Signal-Based Learning Employing Genetic Algorithms and Simulated Annealing)

  • 한창욱;박정일
    • 제어로봇시스템학회논문지
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    • 제7권10호
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    • pp.819-826
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    • 2001
  • Genetic algorithms are becoming more popular because of their relative simplicity and robustness. Genetic algorithms are global search techniques for nonlinear optimization. However, traditional genetic algorithms, though robust, are generally not the most successful optimization algorithm on any particular domain because they are poor at hill-climbing, whereas simulated annealing has the ability of probabilistic hill-climbing. Therefore, hybridizing a genetic algorithm with other algorithms can produce better performance than using the genetic algorithm or other algorithms independently. In this paper, we propose an efficient hybrid optimization algorithm named the adaptive random signal-based learning. Random signal-based learning is similar to the reinforcement learning of neural networks. This paper describes the application of genetic algorithms and simulated annealing to a random signal-based learning in order to generate the parameters and reinforcement signal of the random signal-based learning, respectively. The validity of the proposed algorithm is confirmed by applying it to two different examples.

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평면골조의 최적내진설계를 위한 SA 알고리즘의 냉각스케줄 (Cooling Schedules in Simulated Annealing Algorithms for Optimal Seismic Design of Plane Frame Structures)

  • 이상관;박효선;박성무
    • 한국전산구조공학회:학술대회논문집
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    • 한국전산구조공학회 2000년도 봄 학술발표회논문집
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    • pp.458-465
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    • 2000
  • In the field of structural optimization simulated annealing (SA) algorithm has widely been adopted as an optimizer with the positive features of SA such as simplicity of the algorithm and possibility of finding global solution However, annealing process of SA algorithm based on random generator with the zeroth order structural information requires a large of number of iterations highly depending on cooling schedules and stopping criteria. In this paper, MSA algorithm is presented in the form of two phase annealing process with the effective cooling schedule and stopping criteria. With the application to optimal seismic design of steel structures, the performance of the proposed MSA algorithm has been demonstrated with respect to stability and global convergence of the algorithm

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AI 5182 합금 판재의 회전압연 집합조직과 미세조직 (Clock Rolling texture and Microstructure in AA5182)

  • 마종완;이강노;김훈동;허무영
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2001년도 추계학술대회 논문집
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    • pp.147-149
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    • 2001
  • In order to understand the influence of the modification of deformation texture on the formation of annealing texture, the evolution of texture during the clock rolling and the subsequent annealing was investigated by employing X-ray texture measurements and microstructure observation. The $\beta$-fiber orientations were proved to be quite unstable during the clock rolling. The clock rolled texture having uniform orientation densities along $\{011\}//ND$ fiber resulted in the randomization of annealing texture. This indicated that the operation of both the oriented nucleation and the oriented growth was effectively suppressed in the clock-rolled specimen during recrystallization.

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알루미늄 판재의 온간압연 집합조직과 미세조직에 미치는 초기 집합조직의 영향 (Effect of Initial Texture on the Evolution of Warm Rolling Texture and Microstructure in Aluminum Alloy Sheet)

  • 김훈동;허무영
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2001년도 추계학술대회 논문집
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    • pp.138-141
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    • 2001
  • The evolution of lectures and microstructure during the warm-rolling and subsequent annealing in aluminum 3004 alloy sheets was investigated by employing X-ray texture measurements and microstructure observations. Whereas the typical $\beta$-fiber orientations with the strong Bs-orientation $\{112\}<110>$ formed in the normally cold-rolled specimen, the warm-rolling at $250^{\circ}C$ led to the development of a strong through thickness texture gradient which was characterized by shear texture at the surface layer and rolling textures at the center layer After warm rolling, ultra-fine grains formed in the thickness layer with shear texture components. Upon recrystallization annealing, the $\{001\}<100>$ Cube-texture developed at the expense of normal rolling texture components the rise to the formation of corase recrystallized grains. However, in the layer with shear texture components the continuous recrystallization took place and the fine grain size persisted even after recrystallization annealing.

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$90\%$ 단면감소율로 인발된 전해동의 어닐링시 집합조직과 미세조직 발달에 미치는 전단 변형의 영향 (Effects of Shear Strains on the Developement of Texture and Microstructure of $90\%$ Drawn Copper Wire during Annealing)

  • 박현;이동녕
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2001년도 제4회 압출 및 인발가공 심포지엄
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    • pp.55-62
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    • 2001
  • An electrolytic copper rod was drawn up to $90\%$ in area reduction and annealed under various conditions. The EBSD measurement of the drawn wire showed that in the center region the <111> + <100> fiber duplex texture was dominant, while in the middle and surface regions relatively defused textures developed with a little higher density in <11w>//wire axis. The inhomogeneous texture in the deformed wire gave rise to the inhomogeneous microstructure and texture after annealing. The annealing texture could be classified into the recrystallization texture developed during low temperatures and at the early stage at a high temperature and the growth texture developed after a prolonged annealing at the high temperature. The recrystallization temperature could be explained by the strain energy release maximization model and the growth texture was discussed based on the grain boundary mobility anisotropy.

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Rural Postman Problem 해법을 위한 향상된 Simulated Annealing 알고리즘 (An Enhanced Simulated Annealing Algorithm for Rural Postman Problems)

  • 강명주
    • 한국컴퓨터정보학회논문지
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    • 제6권1호
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    • pp.25-30
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    • 2001
  • 본 논문에서는 Rural Postman Problem(RPP) 해법을 위한 향상된 Simulated Annealing(SA) 알고리즘을 제안한다. SA 알고리즘에서는 냉각 스케줄을 어떻게 설정하느냐에 따라 알고리즘의 성능에 영향을 준다. 따라서, 본 논문에서는 RPP를 위한 냉각 스케줄을 제안하고, 기존에 많이 적용되는 냉각스케줄을 적용한 결과와 비교하여 SA 알고리즘의 성능을 분석한다 실험 결과에서는 본 논문에서 제안한 알고리즘이 기존의 SA 알고리즘에 비해 문제의 크기가 클수록 좋은 결과를 얻는다는 것을 알 수 있었다.

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PLD로 증착한 ZnO 박막의 후열처리 효과 연구 (Effect of post-annealing treatment on the properties of ZnO thin films grown by PLD)

  • 배상혁;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.125-128
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    • 2000
  • ZnO thin films on silicon substrates have been deposited by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the effect of oxygen post-annealing treatment on the property of ZnO thin films, deposited film has been annealed at the substrate temperature of $440^{\circ}C$. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been characterized be improved which results in higher UV emission intensity of photoluminescence.

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