• Progress in Superconductivity
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• v.14 no.2
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• pp.116-121
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• 2012

Effect of mixed gas and additional Mg powder in an annealing process of the $MgB_2$ is investigated. Four different type of samples were prepared, each in different annealing environment of Ar, $Ar+4%H_2$, Ar with Mg powder and $Ar+4%H_2$ with Mg powder. Different annealing environment did not affect the electron-phonon interaction which is reflected from the same superconducting transition of 36.6 K for all samples. The reducing effect of hydrogen is clearly depicted from the presence of excess Mg in sample synthesized in $Ar+4%H_2$ gas implying the reduced rate of reaction between Mg and B. This has manifested itself in terms of slightly increased high-field critical current density of the sample. In contrast, the sample synthesized in $Ar+4%H_2$ with Mg powder, has shown overall enhancement in the superconducting properties as presented by higher diamagnetic saturation and critical current density.

• Korean Journal of Materials Research
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• v.30 no.6
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• pp.308-314
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• 2020

A commercial AA1070 alloy for electrical wire is severely deformed by drawing process in which a rod with an initial diameter of 9mm into is reduced to a wire of 2mm diameter. The drawn AA1070 wire is then annealed at various temperatures from 200 to 450 ℃ for 2h. Changes in microstructure, mechanical properties and electrical properties of the specimens with annealing temperature are investigated in detail. The specimen begins partially to recrystallize at 250 ℃; above 300 ℃ it is covered with equiaxed recrystallized grains over all regions. Fiber textures of {110}<111> and {112}<111> components are mainly developed, and {110}<001> texture is partially developed as well. The tensile strength tends to decrease with annealing temperature due to the occurrence of recovery or/and recrystallization. On the other hand, the elongation of the annealed wire increases with the annealing temperature, and reaches a maximum value of 33.3 % at 300 ℃. Electric conductivity of the specimens increases with annealing temperature, and reaches a maximum value of 62.6 %IACS after annealing at 450 ℃. These results are discussed in comparison with those for the other aluminum alloy.

• Journal of the Korean Society for Heat Treatment
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• v.30 no.6
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• pp.251-257
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• 2017

The effect of annealing temperature on the martensitic transformation behavior, tensile deformation chracteristics and shape recovery etc., has been studied in TiNi based shape memory ribbon fabricated by coldrolling of wire. TiNi based shape memory wire (${\phi}=500{\mu}m$) of which structure is intermetallic compound could be cold-rolled without process annealing up to the reduction rate in thickness of 50%, but a few cracks appear in cold-rolled ribbon in the reduction rate in thickness of 65%. The $B2{\rightarrow}R{\rightarrow}B19^{\prime}$ martensitic transformation or $B2{\rightarrow}B19^{\prime}$ martensitic transformation occurs in annealing conditions dissipating lattice defects introduced by coldrolling. However, in case of higher reduction rate or lower annealing temperature, martensitic transformation in cold-rolled and then annealed ribbons does not occur. The maximum shape recovery rate of cold-rolled ribbons with the reduction rate of 35 and 65% could be achieved at annealing temperatures of 250 and $350^{\circ}C$, respectively. The shape recovery rate seems to be related to the stress level of plateau region on stress-strain curve.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.411-416
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• 2016

Benzothienobenzothiophene ($C_8-BTBT$) is a soluble organic small molecule material with high crystallinity resulting from its strong self-organizing properties. In addition, the high mobility and easy fabrication of $C_8-BTBT$ make it very attractive in terms of organic thin-film transistors. In this work, we made $C_8-BTBT$ thin films by using the zone-casting method; we also used an organic solvent to treat the devices with solvent vapor annealing to improve the electrical properties. As a result, we confirmed improved mobility, threshold voltage, and subthreshold swing after solvent vapor annealing. To prove the effect of solvent vapor annealing, we used the simultaneous extraction model to extract the contact resistance from the current-voltage curve. We confirmed that the electrical properties improved with decreasing contact resistance.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.203-203
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• 2015

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nano-belts, and nano-dots. In contrast to typical vapor-liquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nano-structures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 nanowires (NWs) were synthesized by using radio-frequency magnetron sputtering method. The NWs were then coated by Au thin films and annealed under Ar or N2 gas enviroment with no supply of Gallium and Oxygen source. Several samples were prepared with varying the post annealing parameters such as gas environment annealing time, annealing temperature. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of branched Ga2O3 NWs will be reported.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.102-107
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• 2009

The effect of annealing under argon atmosphere on hydrogenated amorphous silicon (a-Si:H) thin films deposited at room temperature and $300^{\circ}C$ using Radio Frequency (RF) magnetron sputtering has been investigated. For the films deposited at room temperature, there was not any increase in hydrogen content and optical band gap of the films, and as a result, quality of the films was not improved under any annealing conditions. For the films deposited at $300^{\circ}C$, on the other hand, significant increases in hydrogen content and optical band gap were observed, whereas values of microstructure parameter and dark conductivity were decreased upon annealing below $300^{\circ}C$. In this study, it was proposed that the Si-HX bonding strength is closely related to deposition temperature. Also, the improvement in optical, electrical and structural properties of the films deposited at $300^{\circ}C$ was originated from thermally activated hydrogen bubbles, which were initially trapped at microvoids in the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.457-458
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• 2009

In this work, transparent conducting Al-doped zinc oxide (AZO) films were prepared on Coming glass substrate by RF magnetron sputtering using an Al-doped ZnO target (Al: 2 wt.%) at room temperature and all films were deposited with athickness of 150 nm. We investigated the effects of the post-annealing temperature and the annealing ambient on structural, electrical and optical properties of AZO films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using rapid thermal annealing equipment in oxygen. The thickness of the film was observed by field emission scanning electron microscopy (FE-SEM) and grain size was calculated from the XRD spectra using the Scherrer equation and their electrical properties were investigated using a hole measurement and the reflectance of AZO films was investigated by UV-VIS spectrometry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.460-461
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• 2009

We studied the effects of post-annealing treatment on poly(3-hexylthiophene)(P3HT, donor):[6,6]-phenyl $C_{61}$ butyric acid methyl ester(PCBM, acceptor) blend film as an active layer in the organic solar cells(OSCs). For the formation of the active layer, 3 wt.% P3HT:PCBM solution in chlorobenzene were deposited by spin-coating method. In order to optimize the performance of OSCs, the P3HT crystallization and the redistribution of PCBM cluster at P3HT:PCBM composition as a function of post-annealing condition from room temperature to $200^{\circ}C$ were measured by the Hall effect and the UV-vis Spectrophotometer. We thought that the improved efficiency in the OSCs with post-annealing treatment at $150^{\circ}C$ can be explained by the efficient separation or collection of the photogenerated excitons at donor-acceptor interface by P3HT crystallization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.611-617
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• 2006

We report the preparation of N doped, p-type ZnO films by post-annealing in $NH_3$ ambient. The properties were examined by XRD, Hall-effect measurement, PL, and SIMS. ZnO films showed better crystallinity and electron concentration of $10^{15}-10^{17}/cm^3$ with post-annealing in $NH_3$ ambient. These films were converted to p-type ZnO by activation thermal annealing process at $800^{\circ}C$ under $N_2$ ambient. The electrical properties of the p-type ZnO showed a hole concentration of $1.06\times10^{16}/cm^3$, a mobility of $15.8cm^2/V{\cdot}s$, and a resistivity of $40.18\Omega{\cdot}cm$. The N doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO:N. In the SIMS spectra, the incorporation of nitrogen was confirmed.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.18 no.1
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• pp.71-78
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• 2005

Rescaled Simulated Annealing(RSA) has been devised for improving the disadvantage of Simulated Annealing(SA) which requires tremendous amount of computation time. RSA and SA have been for optimization of truss and satellite structures and for comparison of results from two algorithms. Ten bar truss structure which has continuous design variables are optimized.. As a practical application, a satellite structure is optimized by the two algorithms. Weights of satellite upper platform and propulsion module are minimized. MSC/NASTRAN is used for the static and dynamic analysis. The optimization results of the RSA are compared with results of the classical SA. The numbers of optimization iterations could be effectively reduced by the RSA.