• 한국기계가공학회지
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• 제18권2호
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• pp.82-90
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• 2019

In this paper, the effects of different 3D printing conditions including oil lubrication and annealing are observed for their effects on tensile testing. In 3D printing, a press-out extrude filament is rapidly heated and cooled to create internal stress in the printed part. The 3D printing internal stress can be removed using oil-coated filament and annealing. During the oven cooling at an annealing temperature of $106^{\circ}C$, the stress of the specimens with laminated angle $0^{\circ}$ tends to increase by 12.6%, and that of the oil-coated filament printing specimens is increased by 17%. At the annealing temperature of $106^{\circ}C$, the stress of the oil-coated filament printing specimens tends to increase by 35%. In this study, we have found that the oil lubrication and annealing remove the internal stresses and increase the strength of the printed specimens. The oil lubrication and annealing reform the crystalline structures to even out the areas of high and low stress, which creates fewer fragile areas. These results are very useful for the manufacture of 3D printing products with a suitable mechanical strength for applications.

• 대한금속재료학회지
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• 제49권9호
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• pp.732-738
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• 2011

Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

• 한국정밀공학회지
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• 제11권2호
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• pp.173-181
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• 1994

A Cold spot temperature control system for the batch annealing furnace has been estabilished in order to reduce energy consumption to improve productivity and stabilize the propertics of products. Therefore we confirmed a relation between annealing cycle time and atmospheric gas, variation of coil cold spot temperature with time during heating and actual temperature measurements at mid-width of each coil during heating and actual temperature measurements at mid-width of each coil during soaking. The results of the tempaeature variation effect on the batch annealing are as follows. 1) Heating time is reduced to one half with increasing atmospheric gas flow rate and changing of atmospheric gas component from HNx to Ax gas, and annealing cycle time is reduced to 2.7 times. 2) In case of short time healing, the slowest heating part is the center of B coil, in case of long time heating, the low temperature point moves from the center of coil to inside coil. And the temperature in this part is higher than other parts when cooling. When finished heating, the cold spot is located 1/3 of coil inside in case of HNx atmospheric gas. But center of coil in case of Ax atmospheric gas. 3) The outside of top coil is the highest temperature point when heating, which becomes the lowest temperature point when cooling. So, this point becomes high temperature zone at heating and low temperature zone at cooling, It has relation according to atmospheric gas component and flow rate. 4) Soaking time at batch annealing cycle determination is made a decision by the input coil width, and soaking time for quality homogenization of 1214mm width coil must be 2.5 hours longer than that of 914mm width coil for the same ciol weight. 5) Annealing cycle time with Ax atmospheric gas is extended 1 hour in of slow cooling during 5 hours in order to avoid rapid cooling.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 춘계학술발표강연 및 논문개요집
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• pp.66-66
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• 2001

• 한국진공학회지
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• 제21권3호
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• pp.136-141
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• 2012

열처리 공정으로 제조한 $In_2Se_3$ 박막의 구조 및 광학적 물성을 조사하여 보고한다. 기판위에 스퍼터링 방법으로 인듐(In: indium)을 증착하고 셀레늄 분위기에서 열처리 온도를 변화시키며 In-Se 박막을 제조하였다. 열처리 온도가 증가함에 따라 $In_2Se_3$ 박막의 형성과 상의 변화를 관찰 할 수 있었다. 낮은 열처리 온도(${\leq}150^{\circ}C$)에서는 In의 뭉침 현상을 관찰할 수 있었고 열처리 온도가 $250^{\circ}C$ 부터 $In_2Se_3$ 박막이 형성되며 $350^{\circ}C$ 에서 ${\gamma}-In_2Se_3$ 상이 형성됨을 알 수 있었다. 열처리 온도가 $400^{\circ}C$로 증가면 wurtzite 구조의 고품질 ${\gamma}-In_2Se_3$ 박막을 얻을 수 있었다. 열처리 온도가 증가함에 따라 $In_2Se_3$ 박막의 밴드갭이 증가함을 알 수 있었고, 열처리 온도 $400^{\circ}C$에서 제조된 ${\gamma}-In_2Se_3$ 결정질 박막의 밴드갭이 1.796eV임을 알았다.

• 한국재료학회지
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• 제18권4호
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• pp.222-227
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• 2008

In this study, $BaTiO_3$ thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the $BaTiO_3$ thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from $500-1000^{\circ}C$. XRD results showed that the highest crystal quality was obtained from the samples annealed at $600-700^{\circ}C$. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to $600^{\circ}C$; and 80 nm grains were obtained at $700^{\circ}C$. The surface roughness of the $BaTiO_3$ thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was $700^{\circ}C$. XPS results demonstrated that the binding energy of each element of the thin-film-type $BaTiO_3$ in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at $1000^{\circ}C$. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to $700^{\circ}C$. All of the results obtained in this study clearly demonstrate that an annealing temperature of $700^{\circ}C$ results in optimal structural properties of $BaTiO_3$ thin films in terms of their crystal quality, surface roughness, and composition.

• Journal of Magnetics
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• 제11권1호
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• pp.36-42
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• 2006

In this report, we demonstrate a comprehensive analysis of the effects of Au addition on the microstructure and magnetic properties of $Fe_{73.5}Si_{13.5}B_{9}Nb_{3}Au_1$ Finemet-type alloy. It was found that the as-quenched alloys were the amorphous state and turned into nanocrystalline state under heat treatments. The DSC analysis indicates that the sharply exothermal peak corresponding to the crystallization of the $\alpha-Fe(Si)$ was observed at $547-579^{\circ}C$ depending on the heating rates, which is little higher than that of original Finemet (542-$570{^{\circ}C}$, respectively). Besides, the thermomagnetic result confirmed that the full substitution of Cu by Au with the single phase structure in the M(T) curve along cooling cycle. Ultrasoft magnetic properties of the nanocrystallized samples were significantly enhanced by the proper annealing such as the increase of permeability and the decrease of the coercivity. The optimum annealing condition was found at the annealing temperature of $540^{\circ}C$ and the increase of the annealing time up to 90 min.

• 한국재료학회지
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• 제13권3호
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• pp.174-179
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• 2003

Thin copper films were grown by electrodeposition on copper seed layers which were grown by sputtering of an ultra-pure copper target on tantalum nitride-coated silicon wafers and subsequently, cleaned in ECR plasma. The copper films were then subjected to ⅰ) vacuum annealing, ⅱ) rapid thermal annealing (RTA) and ⅲ) rapid thermal nitriding (RTN) at various temperatures over different periods of time. XRD, SEM, AFM and resistivity measurements were done to ascertain the optimum heat treatment condition for obtaining film with minimum resistivity, predominantly (111)-oriented and smoother surface morphology. The as-deposited film has a resistivity of ∼6.3 $\mu$$\Omega$-cm and a relatively small intensity ratio of (111) and (200) peaks. With heat treatment, the resistivity decreases and the (111) peak becomes dominant, along with improved smoothness of the copper film. The optimum condition (with a resistivity of 1.98 $\mu$$\Omega$-cm) is suggested as the rapid thermal nitriding at 400oC for 120 sec.

• Journal of Biosystems Engineering
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• 제10권1호
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• pp.76-82
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• 1985

To investigate the influence of annealing heat treatment on the mechanical properties at the various weld zone, an experimental study was performed for the structural alloy steel. The results obtained from the experimental works are as follows: 1. Hardness and tensile strength showed the highest value at the heat affected zone, which was 5mm apart from bond zone. With increasing of annealing temperature, hardness and tensile strength were decreased at every weld zone, and bound in heat affected zone was increased. 2. Impact strength was the highest at the filler metal, and increased with increment of annealing temperature at filler metal and base metal. However, both at bond and heat affected zones, impact strength was increased from $700^{\circ}C$ of annealing temperature, and was decreased again over $900^{\circ}C$. 3. Mutual relationship between the mechanical properties at filler and base metals showed a similar linearty to that the common structural steel did. However, it varied unsteadly both at bond and heat affected zones. 4. It may be concluded that proper annealing temperature is $700^{\circ}C$ from the viewpoint of hardness, tensile and impact strength.

• Transactions on Electrical and Electronic Materials
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• 제17권3호
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• pp.134-138
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• 2016

The fullerene solar cells are becoming a feasible choice due to the advanced developments in donor materials and improved fabrication techniques of devices. Recently, sufficient optimization and improvements in the processing techniques like incorporation of solvent vapor annealing (SVA) with additives in solvents has become a major cause of prominent improvements in the performance of organic solar cell-based devices . On the other hand, the challenge of reduced open circuit voltage (V_oc) remains. This study presents an approach for significant performance improvement of overall device based on organic small molecular solar cells (SMSCs) by following a two step technique that comprises thermal annealing (TA) and SVA (abbreviated as SVA+TA). In case of exclusive use of SVA, reduction in V_oc can be eliminated in an effective way. The characteristics of charge carriers can be determined by the measurement of transient photo-voltage (TPV) and transient photo-current (TPC) that determines the scope for improvement in the performance of device by two step annealing. The recovery of reduced V_oc is linked with the necessary change in the dynamics of charge that lead to increased overall performance of device. Moreover, SVA and TA complement each other; therefore, two step annealing technique is an appropriate way to simultaneously improve the parameters such as V_oc, fill factor (FF), short circuit current density (J_sc) and PCE of small molecular solar cells.