• Fashion & Textile Research Journal
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• v.15 no.6
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• pp.985-992
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• 2013

Polytrimethylene terephthalate(PTT) offers several advantageous properties such as good tensile strength, uniformity, stiffness, toughness, UV stability, resilience, stain resistance, outstanding elastic recovery, and dyeability. The effects of annealing temperature on physical properties and the structure of PTT filaments and yarn were investigated by measuring wide-angle X-ray diffraction (WAXD), density, optical birefringence, dynamic visco elasticity, and tensile testing. The intensity of maximum tan ${\delta}$ decreased and the temperature of maximum tan ${\delta}$ shifted to a higher temperature as the annealing temperature of filaments increased; however, it shifted to a lower temperature when the annealing temperature exceeded $130^{\circ}C$. In addition, crystallinity, density and D-spacing of (010) crystal face increased as the annealing temperature increased. Optical birefringence and specific stress were almost constant up to $100^{\circ}C$ and then decreased above $130^{\circ}C$. The shrinkage of PTT filament is 0 in boiling water when annealed above $130^{\circ}C$; consequently, the use of annealed fiber above $130^{\circ}C$ can remove thermal instability when dyeing PTT fiber. In the case of yarns, the thermal stability and physical properties of yarns showed the best effect when the ply number is less than 5, twist number is less than 400tpm, and the annealing time is 20minutes.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.32 no.6
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• pp.49-55
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• 2004

The increase of computing power makes stochastic optimization algorithms available in structural design. One of the stochastic algorithms, simulated annealing algorithm, has been applied to various structural optimization problems. By applying several cooling schedules such as simulated annealing (SA), Boltzmann annealing (BA), fast annealing (FA) and adaptive simulated annealing (ASA), truss structures are optimized to improve the quality of objective functions and reduce the number of function evaluations. In this paper, many cooling parameters have been applied to the cooling schedule of ASA. The influence of cooling parameters is investigated to find the rules of thumb for using ASA. Tn addition, the cooling schedule combined with BA and ASA is applied to the optimization of ten bar-truss and twenty five bar-truss structure.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.8-11
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• 2001

In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

• Polymer(Korea)
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• v.27 no.2
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• pp.113-119
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• 2003

The thermal properties and crystallization behaviors of poly(ethylene terephthalate) (PET) were investigated by controlling the annealing conditions of PET sample, such as relative humidity, temperature, and time. The variations of moisture content, glass transition temperature ($T_g$) and cold crystallization temperature ($T_{\propto}$) were examined after annealing the PET sample. Subsequently crystallization process was performed with the annealed PET specimen, and then the degree of crystallinity and heat distortion temperature (HDT) of variously crystallized PET specimen were examined. Residual stress relaxation in the injection molded PET sample after annealing was also observed through polarized films. Moisture content in the PET specimen increased up to 6000 ppm with increasing the relative humidity, temperature, and time of annealing. $T_g$ and $T_{\propto}$ of the annealed PET specimen decreased with increasing moisture content. The degree of crystallinity increased as increasing moisture content in the PET specimen. However for same moisture content, the degree of crystallinity varied with annealing conditions. The relaxations of residual stress in the PET sample differed from annealing conditions, and the maximum degree of crystallinity increased with decreasing residual stress in the PET sample.

• Journal of Radiation Protection and Research
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• v.22 no.3
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• pp.135-141
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• 1997

The study of anneal characteristics is important for TL dosimeter to reuse. To obtain the annealing condition of the recently developed, new TL dosimeter, LiF:Mg,Cu,Na,Si Teflon Tills in a disk type (diameter 4.5 mm, thickness about $90mg/cm^2$), we studied for pre-irradiation annealing, readout procedure and post-readout annealing, in order. The gamma irradiations were carried out with a $^{60}Co$, dose of 0.1 Gy. We have used the method that observe the variation of thermoluminescent(TL) intensity of these Teflon TLDs over repeated cycles by changing both anneal temperature and anneal time with the TLD reader and the oven. There is a 5% loss in sensitivity over the ten repeated readouts by the annealing condition:pre-irradiation annealing at $80^{\circ}C$ for one hour, readout to $280^{\circ}C$ and post-readout annealing at $270^{\circ}C$ for 20 seconds.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.5
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• pp.536-541
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• 2015

Copper has been used extensively as an electric wire or as a base material in various types of machineries owing to its good electrical and thermal conductivity and good fabricating property, as well as its good corrosion resistance compared to iron. Furthermore, the copper-nickel alloy has significant corrosion resistance in severely corrosive environments. Although, cupro-nickel alloy shows better corrosion resistance than the brass and bronze series, this alloy also corroded in severely corrosive environments, including aggressive chloride ions, dissolved oxygen, and condition of fast flowing seawater. In this study, and annealing treatment at various annealing temperatures was carried out on the cupro-nickel (Cu-10%Ni) alloy, and the effects of annealing were investigated using electrochemical methods, such as measuring the polarization and impedance behaviors under flowing seawater conditions. The corrosion resistance increased by annealing compared to non heat treatment in the absence of flowing seawater. In particular, the sample annealed at $200^{\circ}C$ exhibited the best corrosion resistance. The impedance in the presence of flowing seawater showed higher values than in the absence of flowing seawater. Furthermore, the highest impedances was observed in the sample annealed at $800^{\circ}C$, irrespective of the present of flowing seawater. Consequently, the corrosion resistance of cupro-nickel (Cu-10%Ni) alloy in a severely corrosive environment can be improved somewhat by annealing.

• Progress in Superconductivity
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• v.5 no.2
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• pp.124-127
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• 2004

Many of research efforts have been focused on the improvement of critical current density (Jc) of silver-sheathed Bi-2223 tapes far practical applications. In this study, the transformation of Bi-2212 phase was investigated, which was transformed to orthorhombic from tetragonal through pre-annealing during powder packing and drawing process. The relationship between hardness of Bi-2212 orthorhombic phase and workability of Bi-2223/Ag tape was investigated. Bi-2223 superconducting wires with 55 filaments were fabricated by stacking and drawing process with different heat-treatment histories. Before rolling process, round wires were pre-annealing at 76$0^{\circ}C$ and in a low oxygen partial pressure. We confirmed that pre-annealing step was to transform to Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases. However the breakages were created at Ag-alloy clad during rolling for pre-annealed Bi-22231Ag tapes. Several pre-annealing scenarios were introduced to reduce the breakages during rolling process. Microstructure and critical current density of pre-annealed Bi-2223 superconducting tapes were investigated. We could achieve proper pre-annealing conditions for Ag-alloy clad Bi-2223 superconducting tapes.

• Korean Journal of Materials Research
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• v.21 no.8
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• pp.461-467
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• 2011

Cu(In, Ga)$Se_2$ (CIGS) precursor films were electrodeposited on Mo/glass substrates in acidic solutions containing $Cu^{2+}$, $In^{3+}$, $Ga^{3+}$, and $Se^{4+}$ ions at -0.6 V (SCE) and pH. 1.8. In order to induce recrystallization, the electrodeposited $Cu_{1.00}In_{0.81}Ga_{0.09}Se_{2.08}$ (25.0 at.% Cu + 20.2 at.% In + 2.2 at.% Ga + 52.0 at.% Se) precursor films were annealed under a high Se gas atmosphere for 15, 30, 45, and 60 min, respectively, at $500^{\circ}C$. The Se amount in the film increased from 52 at.% to 62 at.%, whereas the In amount in the film decreased from 20.8 at.% to 9.1 at.% as the annealing time increased from 0 (asdeposited state) to 60 min. These results were attributed to the Se introduced from the furnace atmosphere and reacted with the In present in the precursor films, resulting in the formation of the volatile $In_2Se$. CIGS precursor grains with a cauliflower shape grew as larger grains with the $CuSe_2$ and/or $Cu_{2-x}Se$ faceted phases as the annealing times increased. These faceted phases resulted in rough surface morphologies of the CIGS films. Furthermore, the CIGS layers were not dense because the empty spaces between the grains were not removed via annealing. Uniform thicknesses of the $MoSe_2$ layers occurred at the 45 and 60 min annealing time. This implies that there was a stable reaction between the Mo back electrode and the Se diffused through the CIGS film. The results obtained in the present research were sufficiently different from comparable studies where the recrystallization annealing was performed under an atmosphere of Ar gas only or a low Se gas pressure.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.722-725
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• 2013

In this work, we have been analyzed the characteristics of ReRAM with different annealing condition and temperature. The ReRAM devices with top electrode=150nm, bottom electrode=150nm, oxide thickness=70nm and annealing temperature=$500^{\circ}C$, $850^{\circ}C$ have been used in characterization. The Set/Reset voltage, sensing window and resistivity have been characterized. From the measurement results, the Set/Reset voltage and sensing window have been enhanced as the annealing temperature has been increased. But it has been decreased as the temperature performance has been increased. In case of the annealing temperature=$850^{\circ}C$, the variation of Set/Reset voltage was lower than that of other condition. But the variation of sensing window was the lowest when the annealing temperature was $500^{\circ}C$. With considering the variation of Set/Reset voltage and sensing window, the devices annealed at $850^{\circ}C$ showed the best performance to ReRAM.