• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.73-76
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• 2014

$Pt/Al_2O_3/La_2Si_5O_x/SiO_2/Si$ charge trap memory capacitors were prepared, in which the $La_2Si_5O_x$ film was used as the charge trapping layer, and the effects of post annealing atmospheres ($NH_3$ and $N_2$) on their memory characteristics were investigated. $La_2O_3$ nanocrystallites, as the storage nodes, precipitated from the amorphous $La_2Si_5O_x$ film during rapid thermal annealing. The $NH_3$ annealed memory capacitor showed higher charge storage performances than either the capacitor without annealing or the capacitor annealed in $N_2$. The memory characteristics were enhanced because more nitrogen was incorporated at the $La_2Si_5O_x/SiO_2$ interface and interfacial reaction was suppressed after the $NH_3$ annealing treatment.

• Structural Engineering and Mechanics
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• v.25 no.2
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• pp.239-268
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• 2007

This paper deals with optimal stacking sequence design of laminate composite structures. The stacking sequence optimisation of laminate composites is formulated as a combinatorial problem and is solved using Simulated Annealing (SA), an algorithm devised based on inspiration of physical process of annealing of solids. The combinatorial constraints are handled using a correction strategy. The SA algorithm is strengthened by embedding Tabu search in order to prevent recycling of recently visited solutions and the resulting algorithm is referred to as tabu embedded simulated Annealing (TSA) algorithm. Computational performance of the proposed TSA algorithm is enhanced through cache-fetch implementation. Numerical experiments have been conducted by considering rectangular composite panels and composite cylindrical shell with different ply numbers and orientations. Numerical studies indicate that the TSA algorithm is quite effective in providing practical designs for lay-up sequence optimisation of laminate composites. The effect of various neighbourhood search algorithms on the convergence characteristics of TSA algorithm is investigated. The sensitiveness of the proposed optimisation algorithm for various parameter settings in simulated annealing is explored through parametric studies. Later, the TSA algorithm is employed for multi-criteria optimisation of hybrid composite cylinders for simultaneously optimising cost as well as weight with constraint on buckling load. The two objectives are initially considered individually and later collectively to solve as a multi-criteria optimisation problem. Finally, the computational efficiency of the TSA based stacking sequence optimisation algorithm has been compared with the genetic algorithm and found to be superior in performance.

• Journal of the Korean Ceramic Society
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• v.33 no.6
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• pp.665-671
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• 1996

Ferroelectric Pb(Fe1/2Nb1/2)O3 thin films were successfully fabricated on ITO/Glass substrate by sol-gel proces-sing and characterized to determine the dielectric and electric properties. Viscosity of PEN sol measured to investigate rheological properties was 3.25 cP which was proper for coating. The sol also showed Newtonian behavior. RTA(Rapid Thermal Annealing) was used for the annealing of the thin film and 1200~1700$\AA$ thick PEN thin films were fabricated by repeating the intermediate and the final annealing. After the deposition of Pt as top electrode by vacuum evaporation dielectric and electric properties were measured. Dielectric properties of FFN thin film were enhanced by increasing the perovskite phase fraction with increasing the annealing temperature. Measured dielectric constant of 1700$\AA$ PFN thin film annealed at $650^{\circ}C$ was 890 at 1kHz Capacitatnce density and dielectric loss were 47 fF/${\mu}{\textrm}{m}$2 and 0.47 respectively. As a result of measuring Curie temperature PFN thin films had Curie point with a rang of 110~12$0^{\circ}C$ and showed broad dielectric peak at that point. Leakage current of the PFN thin films were increased with increasing the annealing tempera-ture.

• Journal of information and communication convergence engineering
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• v.1 no.4
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• pp.199-204
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• 2003

In this paper, we present the thermal annealing effects of the W/$SiO_2$ multi-layer reflectors in ZnO-based FBAR devices with cobalt (Co) electrodes in comparison with those with aluminum (Al) electrodes. Various thermal annealing conditions have been implemented on the W/$SiO_2$ multi-layer reflectors formed on p-type (100) silicon substrates. The resonance characteristics could be significantly improved due to the thermal annealing and were observed to depend strongly on the annealing conditions applied to the reflectors. Particularly, the FBAR devices with the W/$SiO_2$ multi- layer reflectors annealed at $400^{\circ}C$/30min have shown superior resonance characteristics in terms of return loss and quality-factor (Q-factor). In addition, the use of Co electrodes has resulted in further improvement of the resonance characteristics as compared with the Al electrodes. As a result, the combined use of both the thermal annealing and Co electrodes seems very useful to more effectively improve the resonance characteristics of the FBAR devices with the W/$SiO_2$ multi-layer reflectors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.859-865
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• 2004

LaNiO$_3$(LNO) thin films on (100) Si substrates are prepared by sol-gel method on heat treatment conditions, such as heat transfer direction, pyrolysis and annealing process, and annealing temperatures and times. The effect of heat treatment conditions on the (100) orientations, structures and resistances of the thin films are investigated by XRD, SEM(FESEM), and a lout probe method. Highly (100) orientation factor(0.97), a pseudocubic crystalline structure with a dense and uniform microstructure could be formed by the following conditions： 1) the heat transfer direction is from Si substrate to LNO, 2) the pyrolysis and annealing process are alternated, 3) the annealing temperature is $650^{\circ}C$ and 4) the annealing times is 3 minutes. The sheet resistance of thin films decreased with increasing of a annealing temperature and time, and a number of coating.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1349-1351
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• 1998

Platinum-Cobalt alloy thin films were deposited on $Al_2O_3$ substrates by r.f. cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the $Al_2O_3$ substrates by lift-off method and investigated the physical and electrical characteristics of these films under various conditions (the input power, working vacuum, annealing temperature, thickness of thin films) and also after annealing these films. At input power of Pt : $4.4 W/cm^2$. Co:6.91W/$cm^2$. working vacuum of 10 mTorr and annealing conditions of $1000^{\circ}C$ and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was $15{\mu}{\Omega}{\cdot}cm$ and $0.5{\Omega}/{\square}$, respectively. The TCR value of Pt-Co alloy thin films was measured with various thickness of thin films and annealing conditions. The optimum TCR value is gained under conditions $3000{\AA}$ of thin films thickness and $1000^{\circ}C$ of annealing temperature. These results indicate that Pt-Co alloy thin films have potentiality for the high resolution RTD temperature sensors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.521-524
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• 2012

We report on variations of electrical properties with different active layer thickness and post-annealing temperature in amorphous In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). In particular, subthreshold swing (SS) of the IGZO-TFTs was improved as increasing the active layer thickness at an given post-annealing temperature, accompanying the negative shift in turn-off voltage. However, as increasing post-annealing temperature, only turn-off voltage was shifted negatively with almost constant SS value. The effect of the active layer thickness and post-annealing temperature on electrical properties, such as SS, field effect mobility and turn-off voltage in IGZO-TFTs has been explained in terms of the variation of trap density in IGZO channel layer and at gate dielectric/IGZO interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.117-118
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• 2008

High-pressure deuterium annealing process is proposed and investigated for enhanced electrical and reliability properties of 512Mb DDR2 DRAM without increase in process complexity. High pressure deuterium annealing (HPDA) introduced during post metal anneal (PMA) improves not only DRAM performance but also reliability characteristics of MOSFET. Compared with a control sample annealed in a conventional forming gas, additional annealing in a high pressure deuterium ambient at $400^{\circ}C$ for 30 min decreased G1DL current and junction leakage. The improvements can be explained by deuterium incorporation at $SiO_2$/Si substrate interface near isolation trench edge.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.426-429
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• 2003

In this study, phase transformation characteristics of Nitinol shape memory alloy with 54.5wt%Ni-45.5wt%Ti were investigated by varying with annealing treatment and cutting conditions through DSC(differential scanning calorimetry). Annealing treatment conditions were considered as heat treated time of 5 min, 15 min, 30 min, and 45 min, heat treated temperature of 40$0^{\circ}C$, 50$0^{\circ}C$, 5$25^{\circ}C$, 55$0^{\circ}C$, 575$^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$, 80$0^{\circ}C$, and 90$0^{\circ}C$, and environmental condition of heat treatment under vacuum or air. Cutting conditions were considered as no cutting, one side cutting, and two side cutting. Tensile test was also conducted on Nitinol shape memory alloy to investigate thermomechanical characteristics by varying with annealing heat treatment histories. According to the results, annealing treatment and cutting conditions were found to significantly affect on phase transformation and thermomechanical characteristics of Nitinol shape memory alloy.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.5
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• pp.303-308
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• 2000

The ring gears of automobile parts are manufactured generally process chart of which is as follows : forging ${\rightarrow}$ annealing or normalizing ${\rightarrow}$ rough machining ${\rightarrow}$ hardening(Quenching-Tempering or carburizing process) ${\rightarrow}$ finish machining. Isothermal annealing process after forging is most effective in the side of improvment of machinability. On this study we selected two kinds of steel;SCM415, SCM435 of most universal and investigated microstructures to find out most suitable condition of heat treatment in proportion continuous cooling and isothermal annealing. As the cooling rate is $5^{\circ}C$ per minute in continuous cooling process, martensite and bainite are coexisted with ferrite and pearlite in SCM435 steel. If the cooling rate is slower than $5^{\circ}C$ per minute, microstructure were only ferrite and pearlite but formation of band structure can't be avoid. On the other hand, microstructure is only ferrite and pearlite regardless of cooling rate because carbon content of SCM415 steel is low. Moreover formation of band structure isn't exposed by faster cooling rate. Most optimal temperature of the isothermal annealing is from $650^{\circ}C$ to $680^{\circ}C$ in SCM435 steel. When holding time is 60 minute with $650^{\circ}C$, the identical ferrite and pearlite microstructures can be obtained.