• International conference on construction engineering and project management
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• 2007.03a
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• pp.777-786
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• 2007

This paper presents a modified simulated annealing algorithm to optimize linear scheduling projects with multiple resource constraints and its effectiveness is verified with a proposed problem. A two-stage solution-finding procedure is used to model the problem. Then the simulated annealing and the modified simulated annealing are compared in the same condition. The comparison results and the reasons of improvement by the modified simulated annealing are presented at the end.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.2 s.233
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• pp.262-269
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• 2005

Optimization of a satellite structure under severe space launching environments is performed considering various design constraints. Simulate annealing, one of combinatorial optimization techniques, is used to optimize the satellite. The optimization results by the simulated annealing are compared to those by the method of modified feasible direction and genetic algorithm. Ten bar truss structure is optimized for feasibility study of the simulated annealing. Finally, the satellite structure is optimized by the simulated annealing algorithm under space environment. Weights of the satellite upper platform and propulsion module are minimized with consideration of several static and dynamic constraints. MSC/NASTRAN is used to find the static and dynamic responses. Simulated annealing has been programmed and integrated with the finite element analysis program for optimization. It is shown that the simulated annealing algorithm can be extended to the optimization of space structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.346.2-346.2
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• 2016

The rear side contact recombination in the crystalline silicon solar cell could be reduced by back surface field. We formed polycrystalline silicon as a back surface field through crystallization of amorphous silicon. A thin silicon oxide applied to the passivation layer. We used quasi-steady-state photoconductance measurement to analyze electrical properties with various annealing condition. And, blister formed on surface of wafer during the annealing process. We observed the blister after varied annealing process with wafer of various surface. Shape and density of blister is influenced by various annealing temperature and process time. As the annealing temperature became higher, the average diameter of blister is decreased and total number of blister is increased. The sample with the $600^{\circ}C$ annealing temperature and 1 min annealing time exhibited the highest implied open circuit voltage and lifetime. We predicted that the various shape and density of blister affects the lifetime and implied open circuit voltage.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1995.10a
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• pp.629-632
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• 1995

The formability of an automobile body panel is very important. So, we performed an annealing condition change for the development of annealing condition with temperature, atmospheric gas and the annealing cycle. Formability was changed under the influenced of the mechanical properties of steel sheet for the automobile body panel. Therefore, ot os important in the BAF(Batch annealing furnace) annealing process. Because mechanical properties were decided on the heat treatment method of the coil. So, we tested the development of mechanical properties according to the heat treatment method at the annealing furnace using the Ax atmospheric gas and the HNx atmospheric gas. As a result of several investigations, we confirmed the following characteristics ; mechanical properties change under the influence of the annealing cycle and atmospheric gas.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.3A
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• pp.284-289
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• 2002

In this paper, we propose the fast simulated annealing algorithm to decrease convergence rate in image segmentation using MRF. Simulated annealing algorithm has a good performance in noisy image or texture image, But there is a problem to have a long convergence rate. To fad a solution to this problem, we have labeled each pixel adaptively according to its intensity before simulated annealing. Then, we show the superiority of proposed method through experimental results.

• Journal of information and communication convergence engineering
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• v.3 no.1
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• pp.23-27
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• 2005

In this paper, the effects of various annealing conditions on the resonance characteristics of ZnO-based FBAR devices are compared. Several FBAR device samples were fabricated by using three different annealing methods while one sample remained non-annealed as a reference for comparison. Return loss ($S_11$) could be significantly improved by both Bragg reflector-annealing and/or post-annealing. Especially, the use of the combined annealings resulted in most desirable resonance improvement compared with the Bragg reflector-annealing or post-annealing method alone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.224-225
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• 2007

The Low dielectric properties of epoxy/Annealing $SiO_2$ composites using Annealing new material of nanosized amorphous particles were investigated as function frequency, temperature and filler contents composition. The dielectric constant decrease with increasing frequency and also increase with increasing ambient temperature. The dielectric constant decrease with increase annealing filler contents for epoxy base. The result of x-ray diffraction could obtained single crystal of annealing $SiO_2$ from 500nm amorphous $SiO_2$ powder.

• Korean Journal of Optics and Photonics
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• v.20 no.1
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• pp.34-40
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• 2009

In-situ pulse laser (Nd-YAG, 2nd harmonics 532 nm) annealing used in physical vapor deposition of $MgF_2$, $SiO_2$ and ZnS thin films was shown to be effective in improving their surface roughness properties. Total integrated scattering (TIS) measurements of $MgF_2$ and $SiO_2$ samples deposited on glass substrates revealed that the laser irradiation of films at an energy of approximately $140\;mJ/cm^2$ at 532 nm with a repetition frequency of 10 Hz and pulse duration of 5 ns during the deposition resulted in total scatterings that were minimum. But in case of the ZnS samples, measurements revealed minimum total scattering at a laser energy of approximately $62\;mJ/cm^2$. Atomic Force Microscopy (AFM) has been used to evaluate the effect of pulse laser annealing on the surface roughness for thin film samples. The results were similar to the TIS measurements, indicating that surface roughness was decreased when the irradiated annealing pulse laser energy increased. But it also increased when the irradiated annealing pulse laser energy was over some limit that depended on the materials.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.4
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• pp.263-266
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• 2017

In this study, the characteristics of anti-pollution coatings on glass substrates through annealing treatment were investigated. To investigate the change of properties by coating method and number of annealing treatment, after the anti-pollution coating was performed on the surface of glass substrate in three ways, the annealing treatment was performed by setting three kinds of annealing treatment conditions. The annealing treatment method is a torch using gas, which is advantage in that it can be installed directly on the site in an easy way compared with a annealing treatment process which is generally difficult. The anti-pollution properties, contact angle, transmittance, hardness, and adhesion of films on glass substrate were measured under 9 conditions of combination of coating methods and annealing treatment conditions. It was confirmed that as the number of annealing treatment increases, the anti-pollution property of the film synthesized on glass substrate becomes better.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.99-102
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• 2003

Tin dioxide thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition process to find the relationship between physicochemical properties and the annealing treatments. The small grains with heat treatments grew to the bunch of grains and then showed the hillocks on the film surface. The thickness decreased with annealing treatment. The measured binding energy (BE) and branching ratio of the Sn 3d spin-orbital doublet were typical of oxidized states of Sn and the BE of the O1s core level of about 530~530.65eV also confirmed the presence of O-Sn bonds. The BE of oxygen and tin with annealing treatment shifted to higher position. O/Sn atomic ratios of films deposited at $375^{\circ}C$ for 2min and 4min were 1.99 and 2.01, respectively. The value of the atomic ratio O/Sn of films deposited at $375^{\circ}C$ for 2min changed from 1.99 to 2.45 with annealing treatment. Gas sensitivity depended on annealing temperature, the sensitivity increased with increasing annealing temperature.