• Title/Summary/Keyword: annealing.

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The Effect of Annealing Heat Treatment Affecting Hardness and Corrosion Resistance of ALDC 12 Al Alloy (ALDC 12종의 경도와 내식성에 미치는 어닐링 열처리의 영향)

  • Cho, Hwang-Rae;Lee, Myeong-Hoon;Lee, Seung-Yeol;Moon, Kyung-Man
    • Proceedings of the Korean Society of Marine Engineers Conference
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    • 2006.06a
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    • pp.95-96
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    • 2006
  • ALDC 12 Al alloy is often corroded with some forms such as pitting corrosion, intergranular corrosion, and galvanic corrosion etc., in case of severe corrosion environment like seawater Annealing heat treatment was performed to improve the corrosion resistance of ALDC 12. Hardness was decreased with increasing of annealing temperature, however its corrosion resistance was clearly improved with increasing of annealing temperature.

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A hybrid tabu-simulated annealing heuristic algorithm for optimum design of steel frames

  • Degertekin, S.O.;Hayalioglu, M.S.;Ulker, M.
    • Steel and Composite Structures
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    • v.8 no.6
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    • pp.475-490
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    • 2008
  • A hybrid tabu-simulated annealing algorithm is proposed for the optimum design of steel frames. The special character of the hybrid algorithm is that it exploits both tabu search and simulated annealing algorithms simultaneously to obtain near optimum. The objective of optimum design problem is to minimize the weight of steel frames under the actual design constraints of AISC-LRFD specification. The performance and reliability of the hybrid algorithm were compared with other algorithms such as tabu search, simulated annealing and genetic algorithm using benchmark examples. The comparisons showed that the hybrid algorithm results in lighter structures for the presented examples.

Effect of Annealing on the Dielectric Properties and Microstructures of Thin Tantalum Oxide Film Deposited with RF Reactive Sputtering

  • Lee, Gyeong-Su;Nam, Kee-Soo;Chun, Chang-Hwan;Kim, Geun-Hong
    • ETRI Journal
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    • v.13 no.2
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    • pp.21-27
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    • 1991
  • Effects of annealing on the dielectric properties and microstructures of thin tantalum oxide film(25nm) deposited on p-type Si substrate with rf reactive magnetron sputtering were investigated. The leakage current density was remarkably reduced from $10^-8$ to $10^-12$ A/$\mum^2$at the electric field of 2MV/cm after rapid thermal annealing(RTA) in $O_2$at $1000^{\circ}C$, while little leakage reduction was observed after furnace annealing in $O_2$ at $500^{\circ}C$. The structural changes of thin tantalum oxide film after annealing were examined using high resolution electron microscope(HREM). The results of HREM show that substantial reduction in the leakage current density after the RTA in $O_2$ can be attributed to crystallization and reoxidation of the thin amorphous tantalum oxide film.

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A Study On the Structure and Mechanical Properties of tensioned and non-tensioned annealed PP filaments (긴장 및 무긴장 상태에서 열처리한 PP 필라멘트의 구조 및 역학적 성질에 관한 연구)

  • Lee, Eun-Woo
    • Journal of the Korean Society of Industry Convergence
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    • v.4 no.4
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    • pp.413-418
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    • 2001
  • The change of crystalline structure and mechanical properties of drawn PP filaments which was treated by tensioned and non-tensioned annealing was investigated. Measurements were carried out with XRD for crystallite size, density gradient tube for crystallinity. and UTM for mechanical properties. Tensioend and non-tensioned annealing were carried out $80^{\circ}C$, $100^{\circ}C$, $120^{\circ}C$: for 10min., 30min., 60min, in oil bath. It was found that the crystallinity and crystallite size of (110) plane of samples were increased with increasing of annealed temperature and time. Also crystallinity and crystallite size of samples which was tensioned annealing were larger than those of non-tensioned annealed samples. Initial modulus and tensile strength of tensioned annealed samples were higher than non-tensioned annealed samples, But elongation of tensioned annealed samples was lower than non-tensioned annealed samples.

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Deformation and Recrystallization of INCONEL 690 (인코넬 690의 변형 및 재결정)

  • 표은종;허무영
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 1995.10a
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    • pp.167-171
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    • 1995
  • The formation of preferred orientations in cold rolled and recrystallized Inconel 690 sheets was studied by the x-ray texture measurements and TEM observations. The increasing{220} pole intensity in the plane normal at the higher reductions was related to the{110}<112> texture component. The rolling texture of the Inconel 690 was the pure metal type. THe dislocation cells were found in the near{110}<112> oriented grains. The onset of deformation twins in the {112}<111>oriented grains. The onset of deformation twins in the {112}<111> oriented grains. The onset of deformation twins in the {112}<111> oriented grains caused the weakening of {112}<111> and the development of {552}<115> in the rolling texture. The annealing texture of the Inconel 690 sheets was dependent on the annealing temperature. The annealing texture of 750$^{\circ}C$ annealed sheets was similar to the cold rolling texture. The major preferred orientations of the 950$^{\circ}C$ annealed specimens were {112}<110> and {001}<110>. The formation of fine and closely spaced annealing twins in the specimen annealed at 1150$^{\circ}C$ led to the randomization of the annealing texture.

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Influence of Wet Annealing on the Performance of SiZnSnO Thin Film Transistors

  • Han, Sangmin;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.1
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    • pp.34-36
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    • 2015
  • Amorphous SiZnSnO(SZTO) thin film transistors(TFTs) have been fabricated by RF magnetron sputtering process, and they were annealed in air and in wet ambient. The electrical performance and the structure were analyzed by I-V measurement, XPS, AFM, and XRD. The results showed improvement in device performance by wet annealing process compared to air annealing treatment, because free electron was shown to be increased due to reaction of oxygen and hydrogen generating oxygen vacancy. This is understood by the generation of free electrons. We expect the wet annealing process to be a promising candidate to contributing to high electrical performance of oxide thin film transistors for backplane device applications.

Investigation of growth of ZnO thin films via RE sputtering system and in-situ post annealing

  • Jin, Hu-Jie;Lim, Keun-Young;So, Byung-Moon;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.61-62
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    • 2005
  • The present article deals with in situ post annealing of ZnO in sputtering system. The ZnO thin films were grown at low temperature of $100^{\circ}C$ and at working pressure of 15 mTorr with RF magnetron sputtering. Having been gown, ZnO thin films were annealed in situ at different temperatures, at annealing ambient pressure of 15 mTorr and in ambients of oxygen and argon respectively. Through analyses of XRDs, it is can be concluded that the crystallinity of annealed ZnO thin films becomes much better than that of as-grown ZnO thin film.

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Effects of Post-Annealing for the (Ba, Sr)$TiO_3$ Thin Films Prepared by PLD (PLD법으로 제작된 (Ba, Sr) $TiO_3$ 박막의 후열처리에 따른 특성 변화)

  • 김성구;주학림
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.1
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    • pp.28-32
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    • 2000
  • Structural and electrical properties of (Ba, Sr)TiO\ulcorner (BST) thin films prepared by pulsed laser depositon were investigated to verify the influences of post-annealing in oxygen ambient. Increase of post-anneal-ing time in oxygen ambient resulted in not only grain growth but also improvement of crystallinity of BST films. Although the post-annealing in oxygen ambient resulted in the increase of surface roughness, it assisted the dielectric constant increase by eliminating oxygen vacancies. The electrical property enhancement including high dielectric constant and low leakage current density was associated with introducing high pressure of oxygen during the post-annealing.

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Thermal Annealing Effects on the Structural and Optical Properties of Sputtered TiO$_2$ Films (스퍼터링 TiO$_2$막의 구조 및 광학적 성질에 미치는 열처리 효과)

  • 박성진;이수일;오수기
    • Journal of the Korean institute of surface engineering
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    • v.30 no.1
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    • pp.63-68
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    • 1997
  • The effects of the post-deposition annealing on the structural optical properties of sputtered $TiO_2$ thin films were studied; annealing was carried out in air up to $1000^{\circ}C$ for different duration. The results of the X-ray diffraction and the raman spectroscopy showed the annealing-condition dependent structural transformation of $TiO_2$ films from the as-deposited amorphous phase to the anatase and rutil phases. The spectroscopic elliposometry was used to investigate the deposition-condition dependence of the as-deposted films optical constants and also the evolution of the optical constants correlated with the annealing-induced structural transformation.

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Annealing effects of ZnO:Er films on UV emission (ZnO:Er막의 UV 발광에 미치는 열처리 효과)

  • Choi, Mu-Hee;Ma, Tae-Young
    • Journal of Sensor Science and Technology
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    • v.18 no.4
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    • pp.316-321
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    • 2009
  • Er-doped ZnO(ZnO:Er) films were deposited onto MgO wafers by ultrasonic spray pyrolysis at 550 $^{\circ}C$ varying the concentration of Er in the deposition source from 0.5 wt% to 3.0 wt%. Annealing of the films in a vacuum was carried out to increase the intensity of ultraviolet(UV) emission from the films. The annealing temperature was between 600$^{\circ}C$ and 800$^{\circ}C$. The crystallographic properties and surface morphology of the films were investigated by X-ray diffraction(XRD)and scanning electron microscope(SEM), respectively. The properties of photoluminescence(PL) for the films were investigated by the dependence of PL spectra on the annealing temperature. X-ray photoelectron spectroscopy(XPS) was conducted to find the composition change in the films by the annealing.