• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.910-913
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• 2003

In order to enhance performance, stability, and brightness of inorganic blue-light emitting EL device, barrier layer structure and pulsed laser annealing(PLA) treatment were introduced. The barrier layer structure was utilized for improving brightness of the device and instead of thermal annealing, pulsed laser annealing process was used. From this study, optimum barrier layer thickness and number of pulsed laser irradiation are established.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1997.03a
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• pp.233-239
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• 1997

The effect of the cross-rolling on the evolution of the deformation texture and the subsequent annealing texture was studied in 5182 aluminium alloy. The orientation density near {011}<110>. The weak ${\beta}$-fiber orientations in the deformation texture lead to the randomization of the annealing texture, whereas the strong ${\beta}$-fiber orientations lead to the strong Cube orientation in the annealing texture. The development of the strong rotated Cube orientation in the annealing texture seemed to be related with the decrease in the R-value.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.1
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• pp.23-27
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• 2005

We observed that optical properties of silicon changed under high dose electron irradiation at 250 keV. Our experimental results revealed that the optical transmission through a silicon wafer is significantly increased by electron irradiation. Transmission increase by the change in the absorption coefficient is explained through an analogy with amorphous silicon. Moreover, solar cell open-circuit voltages indicated that defects were generated by electron irradiation, and that the defects responded to annealing. Our results demonstrated that the optical properties of silicon can be controlled by a combination of electron irradiation and hydrogen annealing.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.367-369
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• 1988

We suggest a new annealing method for stabilization of $Si-SiO_2$ interface state in MOS device using $NH_3$(10%) + $N_2$(90%) ambient gases. The annealing effect was examined through C-V characteristics, threshold voltage, effective mobility on channel, respectively. The experimental result show that the new method is available to improvement of MOS device characteristics.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.21 no.45
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• pp.25-32
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• 1998

A modified simulated annealing algorithm is proposed and applied to the permutation flowshop scheduling with the makespan objective. Based on the job deletion and insertion method, a newly defined Max-min perturbation scheme is proposed to obtain a better candidate solution in the simulated annealing process. The simulation experiments are conducted to evaluate the effectiveness of the proposed algorithm against the existing heuristics and results are reported.

• Journal of Magnetics
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• v.3 no.1
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• pp.15-20
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• 1998

A newly designed magnetic annealing apparatus was used for the treatment of Fe-3%Si steels. With the help of this device, the effect of magnetic annealing on magnetostriction was studied in a wide spectrum of external elastic stresses. It was shown that magnetostriction properties of Fe-Si steels were improved in the compressed state through magnetic annealing, while those in the unstressed state or under tensiion were found to be practically unchanged.

• Journal of Korea Foundry Society
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• v.35 no.5
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• pp.109-113
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• 2015

In this study, the measurement of FN (ferrite volume fraction) and the solution annealing ratio at a temperature of $1130^{\circ}C$ were determined with 15A elbow fittings of shell cast SSC13, and the corrosion resistance with and without austenitizing solution annealing were investigated in comparison with AISI304. The delta ferrite phase was observed in the material due to the slow cooling effect of the shell mold casting. However, the delta ferrite phase decreased gradually with the solution annealing at a temperature of $1130^{\circ}C$. The hardness generally decreased with a heat treatment; however, its corrosion resistance was improved with the heat treatment. In addition, when a passivation treatment was applied, its corrosion ratio showed the lowest value. The pattern of general corrosion decreased due to the decrease in the delta ferrite phase with the solution annealing treatment. Consequently, it is suggested that the corrosion resistance of SSC13 elbow fittings can be improved by increasing the ratio of any solution annealing treatment used and by decreasing the ferrite phase. The relationship between the ratio of solution annealing and delta ferrite is expressed as follows: SA (solution annealing ratio,%) = 98 - FN (ferrite volume fraction, %).

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.279-283
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• 2015

Ni (100 nm thick) was deposited onto synthesized diamonds to fabricate etched diamonds. Next, those diamonds were annealed at varying temperatures ($400{\sim}1200^{\circ}C$) for 30 minutes and then immersed in 30 wt% $HNO_3$ to remove the Ni layers. The etched properties of the diamonds were examined with FE-SEM, micro-Raman, and VSM. The FE-SEM results showed that the Ni agglomerated at a low annealing temperature (${\sim}400^{\circ}C$), and self-aligned hemisphere dots formed at an annealing temperature of $800^{\circ}C$. Those dots became smaller with a bimodal distribution as the annealing temperature increased. After stripping the Ni layers, etch pits and trigons formed with annealing temperatures above $400^{\circ}C$ on the surface of the diamonds. However, surface graphite layers existed above $1000^{\circ}C$. The B-H loop results showed that the coercivity of the samples increased to 320 Oe (from 37 Oe) when the annealing temperature increased to $600^{\circ}C$ and then, decreased to 150 Oe with elevated annealing temperatures. This result indicates that the coercivity was affected by magnetic domain pinning at temperatures below $600^{\circ}C$ and single domain behavior at elevated temperatures above $800^{\circ}C$ consistent with the microstructure results. Thus, the results of this study show that the surface of diamonds can be etched.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.486-492
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• 1998

The amorphous Co-based magnetic films have a large saturation flux density, a low coercive force, and a zero magnetostriction constant. Therefore, they have been studied for application to magnetic recoding heads and micro magnetic devices. However, it was found that the magnetic anisotropy was changed for each film fabrication processes. In this study, we investigated how to control the anisotropy of sputtered amorphous $Co_{89}Nb{8.5}Zr{2.5}$ films. After deposition, the rotational field annealing ant the uniaxial field annealing were performed under the magnetic field of 1.5 kOe. the annealing was done at the temperature range from 400 to $600^{\circ}C$ for one hour. As-deposited amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin film had saturation magnetization ($4\piM_5$) of 0.8 T, coercive force($_IH_C$) of 1.5 Oe, and anisotropy field($H_k$) of 11 Oe. The amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin films annealed by rotational field annealing at $500^{\circ}C$ for one hour was found to be isotropy, and $4\piM_5$ of 0.9 T was obtained from these films, Also, the magnetic anisotropy of as-deposited films could be controlled by uniaxial field annealing at $400^{\circ}C$ for one hour. Anisotropy field($H_k$) of 17 Oe and $4\piM_5$ of 1.0 T were obtained by this method.

• Journal of the Korean Magnetics Society
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• v.25 no.2
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• pp.47-51
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• 2015

To achieve a high tunneling magneto resistance (TMR) of sputtered magnetic tunnel junctions (MTJs) with an MgO barrier, the annealing process is indispensable. The structural and compositional changes as consequences of the annealing greatly affect the spin-dependent transport properties of MTJs. Higher TMR could be obtained for MTJs annealed at higher annealing temperature. The diffusion of Ru, Mn and/or Ta in the MTJs may occur during annealing process, which is known to be detrimental to spin-dependent tunneling effect. The rapid thermal annealing (RTA) process was used for annealing the MTJs with synthetic antiferromagnets. To suppress the diffusion of Mn, Ru and/or Ta in the MTJs, the process time and temperature of RTA were minutely controlled.