• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.365-371
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• 2003

We prepared silicon on insulator(SOI) wafer pairs of Si/1800${\AA}$ -SiO$_2$ ∥ 1800${\AA}$ -SiO$_2$/Si using water direct bonding method. Wafer pairs bonded at room-temperature were annealed by a normal furnace system or a fast linear annealing(FLA) equipment, and the micro-structure of bonding interfaces for each annealing method was investigated. Upper wafer of bonded pairs was polished to be 50 $\mu\textrm{m}$ by chemical mechanical polishing(CMP) process to confirm the real application. Defects and bonding area of bonded water pairs were observed by optical images. Electrical and mechanical properties were characterized by measuring leakage current for sweeping to 120 V, and by observing the change of wafer curvature with annealing process, respectively. FLA process was superior to normal furnace process in aspects of bonding area, I-V property, and stress generation.

• Transactions on Electrical and Electronic Materials
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• 제15권1호
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• pp.16-19
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• 2014

Charge trapping nonvolatile memory capacitors with $ZrO_2$ as charge trapping layer were fabricated, and the effects of post annealing atmosphere ($NH_3$ and $N_2$) on their memory storage characteristics were investigated. It was found that the memory windows were improved, after annealing treatment. The memory capacitor after $NH_3$ annealing treatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up to ten years, even at $150^{\circ}C$, and excellent endurance (1.5% memory window degradation). The results are attributed to deep level bulk charge traps, induced by using $NH_3$ annealing.

• 한국안전학회지
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• 제19권1호
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• pp.72-76
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• 2004

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT)thin films are deposited on pt-coated electrode(Pt/$TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with annealing conditions were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at $750^{\circ}C$,/TEX> and grains largely grew in oxygen annealing atmosphere. The maximum renanent polarization and the coercive electric field with annealing conditions are 12.40C/$cm^2$ and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 2.13${\times}10^{-10}A/cm^2$, respectively.

• Journal of information and communication convergence engineering
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• 제2권3호
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• pp.149-152
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• 2004

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from $27^{\circ}C\;to\;300^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2004년도 SMICS 2004 International Symposium on Maritime and Communication Sciences
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• pp.16-19
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• 2004

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from 27$^{\circ}C$ to 30$0^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.536-539
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• 2000

The effects of annealing on the electrical and structural characteristics for the rf sputter deposited WO$_3$thin film. The sputtered thin films are annealed at 773K for 1 hour in air atmosphere. Oxygen flow rate were changed from 0 to 70% during sputtering. It is observed from the results of the AFM measurement that the average roughness for the rf sputter deposited WO$_3$thin film would be increased from 2.45 angstrom to 152 angstrom by annealing. The sheet resistance of the sputtered WO$_3$film is changed from insulting to MOhm after annealing. According to the results of the XRD, the as-deposited films revealed the amorphous state whereas the peaks of X-ray diffraction at 2 theta= 28 degrees and 2 theta = 25 degrees corresponding to the (111) and (200) plane of the WO$_3$film respectively are observed after annealing.

• 한국진공학회지
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• 제4권S2호
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• pp.69-74
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• 1995

The effects of TCA incorporation during annealing process on the SIMOX quality is studied. Silicon wafers are implanted with heavy dose of oxygen ions, and are annealed at $1300^{\circ}C$ for 4 hours. The annealing process is splitted into three conditions due to some differences of low temperature preliminary annealing step which are without pre-annealing step. The specimens are analyzed by several methods, such as AES, XTEM, and TRXFA. TCA incorporation during pre-annealing step is effective in dislocation density reduction and heavy metal content reduction.

• Journal of Magnetics
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• 제12권1호
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• pp.49-52
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• 2007

We investigated annealing effect of microforged powders on magnetic properties and electromagnetic absorption behaviors for ferromagnetic Fe-Cr metal alloy powder-polymer composites. The coercive properties greatly decreased with annealing temperature and the magnetic permeability had significantly increased after microforging and subsequent annealing treatment, due to a reduction in lattice strain of the microforged powders. The power loss in the far field regime also had greatly increased after microforging and subsequent annealing treatment in frequency range from 50 MHz to 6 GHz. As a result, the electromagnetic absorption of ferromagnetic Fe-Cr alloy metal powder-polymer composites was highly improved because of the relaxation of the internal strain during annealing process.

• 한국인터넷방송통신학회논문지
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• 제10권1호
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• pp.7-13
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• 2010

질소 분위기하에서 분자선 에피탁시 장치로 성장한 GaN 에피층을 고온 열처리 하였다. 시료는 적절한 조건하에서 급속 열처리 후 구조적인 특성의 향상을 나타내었다. 시료의 결정성의 향상은 에피층의 격자 관련 요소들의 흐트러짐의 감소에 기인한다. 에피층의 열처리는 950도의 급속 열처리로를 이용하여 수행하였다. 고온 급속 열처리가 GaN 에피층의 구조적인 특성들에 미치는 효과는 x선 회절을 통하여 연구하였다. x선 회절 스펙트럼에 있어서 Bragg 피크는 열처리 시간이 증가할수록 각도가 큰 쪽으로 이동하였다. 또한 피크의 FWHM은 열처리 시간이 증가함에 따라 약간의 증가 후 감소하였으며 이후 다시 증가하였다. 이와 같은 결과는 급속 고온 열처리된 GaN 에피층에서 격자 상수에 영향을 미치는 인자들이 에피층의 품질을 좋게 하는 방향으로 일률적으로 변화하는 것이 아니라 에피 품질을 나쁘게 하는 방향으로도 변화한다는 것을 의미한다. 적절한 조건 하에서의 급속 열처리는 에피층의 격자 상수에 관여하는 인자들의 흐트러짐을 감소시켜 에피 결정의 질을 향상시킨다.

• The Korean Journal of Ceramics
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• 제3권4호
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• pp.274-278
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• 1997

(Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.