• 제목/요약/키워드: annealing effects

검색결과 892건 처리시간 0.04초

Diamond-Like-Carbon 박막표면에 UV 배향법을 이용한 액정 배향 효과에 관한 연구 (A Study on Liquid Crystal Alignment effects by UV Alignment Method on a Diamond-Like-Carbon Thin Film Surface)

  • 황정연;조용민;서대식
    • 한국전기전자재료학회논문지
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    • 제16권3호
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    • pp.214-218
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    • 2003
  • We studied the nematic liquid crystal (NLC) aligning capabilities by the UV alignment method on a diamond like carbon (DLC) thin film surface A good LC alignment by UV exposure on the DLC thin film surface at 200${\AA}$ of layer thickness was achieved. Also, a good LC alignment by the UV alignment method on the DLC thin film surface was observed at annealing temperature of 180$^{\circ}C$. However, the alignment defect of the NLC was observed above annealing temperature of 200$^{\circ}C$. Consequently, the good thermal stability of LC alignment by the UV alignment method o the DLC thin film surface can be achieved.

Abnormal Temperature Dependence of Tunneling Magnetoresistance for Magnetic Tunnel Junctions

  • Lee, K.I.;Lee, J.H.;Lee, W.Y.;Rhie, K.;Lee, B.C.;Shin, K.H.
    • Journal of Magnetics
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    • 제7권2호
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    • pp.59-62
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    • 2002
  • Magnetic tunnel junctions (MTJs) were fabricated with high bias for plasma oxidation and the effects of annealing on the temperature dependence of tunneling magnetoresistance (TMR) were investigated experimentally. As-grown, TMR increases, peaks around 160 K, and decreases with increasing temperature from 80 K to 300 K. When MTJs are annealed, $T_{max}$, the temperature at which maximum TMR is obtained, decreases as annealing temperature increases to the optimal point. In order to explain this abnormal temperature dependence of TMR, the difference of conductance between parallel and antiparallel alignments of magnetizations as a function of temperature is also analyzed. The shifts of $T_{max}$ due to annealing process are described phenomenologically with spin-dependent transfer rates of electrons tunnel through the barrier.

BPSG막의 Flow 특성 (Flow Characteristics of the BPSG Film)

  • 홍성현;이종무;송성해
    • 한국세라믹학회지
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    • 제26권3호
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    • pp.381-389
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    • 1989
  • Effects of annealing temperature, time, and atmospehre on the flow characteristics of Atmospheric Pressure Chemical Vapor Deposition-borophosphosilicate glass were investigated. Stable step coverage can be obtained by annealing the BPSG film at 90$0^{\circ}C$ for 30 minutes in N2 atmosphere, but further heat treatment isnot effective. Flow characteristics of the BPSG film was better in steam atmosphere than in N2 atmosphere, and the factors which cause it were analyzed. The concentration of boron in the BPSG film was measured pretty accurately by FTIR spectrum. Boron content in the BPSG film was reduced by annealing treatment. The decrement of boron was greater in steam atmosphere than in the N2 atmosphere. Also it was found from the FTIR spectroscopic analysis that PH3 inhibited the oxidation of B2H6.

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DLC 박막을 이용한 액정 배향 효과 (Liquid Crystal Alignment Effects using a DLC Thin Film)

  • 조용민;황정연;서대식;노순준;이대규;백흥구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.346-349
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    • 2001
  • We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of diamond like carbon (DLC) thin film. A high pretilt angle of about 4$^{\circ}$ was measured by ion beam(IB) exposure on the DLC thin film surface. A good LC alignment was observed by the IB alignment method on the DLC thin film surface at annealing temperature of 200$^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of 220$^{\circ}C$ . Consequently, the high NLC pretilt angle and the good thermal stability of LC alignment can be achieved by the IB alignment method on the DLC thin film surface.

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PECVD 산화막의 온도 의존성과 RTP 어닐링 효과 (The dependence of temperature and the effects of RTP annealing of PECVD SiO$_2$films)

  • 배성식;서용진;김태형;김창일;최현식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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    • pp.34-38
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    • 1992
  • Low temperature device processing has become of great interest within the last few years. In such low temperature processes, SiO$_2$films formed by Plasma-enhanced chemical vapor deposition (PECVD) have been studied. PECVD SiO$_2$films were formed with substrate temperature, and annealing time and temperature of RTP changed, and its'characteristics were obsreved by C-V measurement. We found that the quality of SiO$_2$films formed by PECVD depended on annealing time rather than substrate temperature.

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Diamond-like Carbon 박막을 이용한 액정 배향 효과 (Liquid Crystal Alignment Effects using a Diamond-like Carbon Thin Film)

  • 황정연;조용민;서대식;노순준;이대규
    • 한국전기전자재료학회논문지
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    • 제15권5호
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    • pp.419-422
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    • 2002
  • We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a diamond like carbon (DLC) thin film. A high pretilt angle of about $3.5^{\circ}$ by ion beam(IB) exposure on the DLC thin film surface was measured. A good LC alignment by the IB alignment method on the DLC thin film surface was observed at annealing temperature of $200^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of $220^{\circ}C$. Consequently, the high NLC pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the DLC thin film surface can be achieved.

초음파분무열분해법으로 제조한 ZnO:Pt막의 전기적 및 구조적 특성 (Electrical and Structural Properties of ZnO:Pt Films Prepared by Ultrasonic Spray Pyrolysis)

  • 마대영;박기철
    • 센서학회지
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    • 제13권1호
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    • pp.66-71
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    • 2004
  • Pt-doped zinc oxide (ZnO:Pt) films were deposited by ultrasonic spray pyrolysis. Resistivity variation with Pt concentration was measured. The Pt distribution in ZnO:Pt films was studied through Auger Electron Spectroscopy (AES). The ZnO:Pt films were annealed in the ambient of air, water vapor and ozone, respectively. The variation in crystallographic properties and surface morphologies with respect to the annealing condition was observed by X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). The resistivity variation of the films with the annealing condition was measured. Finally, Atomic Force Microscopy (AFM) measurements were carried out to study the effects of the annealing on the roughness of ZnO:Pt films.

KCN 에칭 및 CdS 후열처리가 Cu(In,Ga)(S,Se)2 광흡수층 성능에 미치는 영향 (Effect of Pre/Post-Treatment on the Performance of Cu(In,Ga)(S,Se)2 Absorber Layer Manufactured in a Two-Step Process)

  • 김아현;이경아;전찬욱
    • 신재생에너지
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    • 제17권4호
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    • pp.36-45
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    • 2021
  • To remove the Cu secondary phase remaining on the surface of a CIGSSe absorber layer manufactured by the two-step process, KCN etching was applied before depositing the CdS buffer layer. In addition, it was possible to increase the conversion efficiency by air annealing after forming the CdS buffer layer. In this study, various pre-treatment/post-treatment conditions wereapplied to the S-containing CIGSSe absorber layerbefore and after formation of the CdS buffer layer to experimentally confirm whether similareffects as those of Se-terminated CIGSe were exhibited. Contrary to expectations, it was noted that CdS air annealing had negative effects.

슈퍼 듀플렉스 내식강의 부식특성 및 경도에 미치는 텅스텐 첨가의 영향 (Influence of W Additions on the Corrosion Characteristics and Hardness of Super Duplex Stainless Steel)

  • 한윤기;김정민
    • 열처리공학회지
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    • 제36권5호
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    • pp.261-269
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    • 2023
  • This study aims to investigate the effects of tungsten additions on the microstructure, corrosion characteristics, and hardness of super duplex stainless steel heat-treated at two different annealing temperatures. Under the annealing temperature of 1100℃, the microstructure of the stainless steels consisted mainly of ferrite, while under the annealing temperature of 1000℃, significant amounts of austenite and secondary phases were also observed. In terms of corrosion characteristics in 3.5 wt%NaCl solution, there was not a significant difference due to W addition at the 1100℃ conditions. However, at the 1000℃, a tendency of decreased corrosion resistance was observed with increasing the tungsten content. On the other hand, the micro-hardness of the stainless steel heat-treated 1000℃ showed an increasing trend with tungsten addition. This increase can be mainly attributed to the higher fraction of secondary phases, primarily sigma, known for their high hardness.