• Title/Summary/Keyword: annealing conditions

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A Study on Microstructure and Mechanical Properties of TiC/Steel Composites Fabricated by Powder Metallurgy Process (분말야금공정으로 제조된 TiC/steel 금속복합재료의 미세조직 및 기계적 물성 연구)

  • Lee, Jihye;Cho, Seungchan;Kwon, Hansang;Lee, Sang-Kwan;Lee, Sang-Bok;Kim, Daeha;Kim, Junghwan
    • Composites Research
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    • v.34 no.5
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    • pp.311-316
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    • 2021
  • In this study, TiC/steel metal matrix composites were fabricated by powder metallurgy process using Fealloy powders with 3 wt.% Cr and 10 wt.% Cr, respectively, as matrix material. Subsequently, the composite samples were heat treated by the annealing and quenching-tempering(Q-T), respectively, to understand the effect of heat treatment on the mechanical properties of the composites. The correlation between microstructure and structural strength depending on the chromium content and the heat treatment conditions was studied through tensile, compressive, and transverse rupture test and microstructural analysis. In the case of TiC/steel composite containing 10 wt.% Cr, the tensile strength and transverse rupture strength at room temperature were significantly lowered by the influence of coarse chromium carbide formed at the TiC/steel interface. On the other hand, both TiC/steel composites containing 3 wt.% Cr and 10 wt.% Cr showed much higher compressive strength of about 4 GP after quenching-tempering compared to the annealed specimens regardless of the presence of the chromium carbide.

Preparation of Pd/Al2O3, Pd/Ag/Al2O3 Membranes and Evaluation of Hydrogen Permeation Performance (Pd/Al2O3, Pd/Ag/Al2O3 분리막의 제조와 수소 투과 성능 평가)

  • Lee, Jeong In;Shin, Min Chang;Zhuang, Xuelong;Hwang, Jae Yeon;Kim, Eok yong;Jeong, Chang-Hun;Park, Jung Hoon
    • Membrane Journal
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    • v.32 no.2
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    • pp.116-125
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    • 2022
  • In this experiment, an α-Al2O3 ceramic hollow fiber was used as a support, and a hydrogen membrane plated with Pd and Pd-Ag was manufactured through electroless plating. The Pd-Ag membrane was annealed at 500℃ for 10 h to form an alloy of Pd and Ag. It was confirmed that it became a Pd-Ag alloy through EDS (Energy Dispersive X-ray Spectroscopy) analysis. Also, the thickness of the Pd, Pd-Ag plating layer was measured to be about 8.98 and 9.29 ㎛ through SEM (Scanning Electron Microscope) analysis respectively. Hydrogen permeation experiment was performed using the H2 gas and mixed gas (H2 and N2) in the range of 350~450℃ and 1-4 bar using the prepared hydrogen membrane. Under the H2 gas condition, the Pd and Pd-Ag membrane has a flux of up to 21.85 and 13.76 mL/cm2·min and also separation factors of 1216 and 361 were obtained in the mixed gas at 450℃ and 4 bar conditions respectively.

Preparation of $SrTiO_3$ Thin Film by RF Magnetron Sputtering and Its Dielectric Properties (RF 마그네트론 스퍼터링법에 의한 $SrTiO_3$박막제조와 유전특성)

  • Kim, Byeong-Gu;Son, Bong-Gyun;Choe, Seung-Cheol
    • Korean Journal of Materials Research
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    • v.5 no.6
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    • pp.754-762
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    • 1995
  • Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.

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Bottom electrode optimization for the applications of ferroelectric memory device (강유전체 기억소자 응용을 위한 하부전극 최적화 연구)

  • Jung, S.M.;Choi, Y.S.;Lim, D.G.;Park, Y.;Song, J.T.;Yi, J.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.4
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    • pp.599-604
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    • 1998
  • We have investigated Pt and $RuO_2$ as a bottom electrode for ferroelectric capacitor applications. The bottom electrodes were prepared by using an RF magnetron sputtering method. Some of the investigated parameters were a substrate temperature, gas flow rate, RF power for the film growth, and post annealing effect. The substrate temperature strongly influenced the surface morphology and resistivity of the bottom electrodes as well as the film crystallographic structure. XRD results on Pt films showed a mixed phase of (111) and (200) peak for the substrate temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$ and RF power 80W for the Pt bottom electrode growth. With the variation of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with 0~5% of $O_2$ gas, mixed phase of Ru and $RuO_2$ for $O_ 2$ partial pressure between 10~40%, and a pure $RuO_2$ phase with $O_2$ partial pressure of 50%. This result indicates that a double layer of $RuO_2/Ru$ can be grown in a process with the modulation of gas flow rate. Double layer structure is expected to reduce the fatigue problem while keeping a low electrical resistivity. As post anneal temperature was increased from RT to $700^{\circ}C$, the resistivity of Pt and $RuO_2$ was decreased linearly. This paper presents the optimized process conditions of the bottom electrodes for memory device applications.

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Study on Nucleation and Evolution Process of Ge Nano-islands on Si(001) Using Atomic Force Microscopy (AFM을 이용한 Si (001) 표면에 Ge 나노점의 형성과 성장과정에 관한 연구)

  • Park, J.S.;Lee, S.H.;Choia, M.S.;Song, D.S.;Leec, S.S.;Kwak, D.W.;Kim, D.H.;Yang, W.C.
    • Journal of the Korean Vacuum Society
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    • v.17 no.3
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    • pp.226-233
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    • 2008
  • The nucleation and evolution process of Ge nano-islands on Si(001) surfaces grown by chemical vapor deposition have been explored using atomic force microscopy (AFM). The Ge nano-islands are grown by exposing the substrates to a mixture of gasses GeH4 and H2 at pressure of 0.1-0.5Torr and temperatures of $600-650^{\circ}C$. The effect of growth conditions such as temperature, Ge thickness, annealing time on the shape, size, number density, and surface distribution was investigated. For Ge deposition greater than ${\sim}5$ monolayer (ML) with a growth rate of ${\sim}0.1ML/sec$ at $600^{\circ}C$, we observed island nucleation on the surface indicating the transition from strained layer to island structure. Further deposition of Ge led to shape transition from initial pyramid and hut to dome and superdome structure. The lateral average size of the islands increased from ${\sim}20nm$ to ${\sim}310nm$ while the number density decreased from $4{\times}10^{18}$ to $5{\times}10^8cm^{-2}$ during the shape transition process. In contrast, for the samples grown at a relatively higher temperature of $650^{\circ}C$ the morphology of the islands showed that the dome shape is dominant over the pyramid shape. The further deposition of Ge led to transition from the dome to the superdome shape. The evolution of shape, size, and surface distribution is related to energy minimization of the islands and surface diffusion of Ge adatoms. In particular, we found that the initially nucleated islands did not grow through long-range interaction between whole islands on the surface but via local interaction between the neighbor islands by investigation of the inter-islands distance.

Isolation and Physicochemical Properties of Rice Starch from Rice Flour using Protease (단백질분해효소에 의한 쌀가루로부터 쌀전분의 분리 및 물리화학적 특성)

  • Kim, ReeJae;Oh, Jiwon;Kim, Hyun-Seok
    • Food Engineering Progress
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    • v.23 no.3
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    • pp.193-199
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    • 2019
  • This study aimed to investigate the impact of protease treatments on the yield of rice starch (RST) from frozen rice flours, and to compare the physicochemical properties of RST by alkaline steeping (control) and enzymatic isolation (E-RST) methods. Although the yield of E-RST, prepared according to conditions designed by the modified 23 complete factorial design, was lower than the control, the opposite trends were observed in its purity. E-RST (RST1, isolated for 8 h at 15℃ with 0.5% protease; RST2, isolated for 24 h at 15℃ with 1.5% protease; RST3, isolated for 24 h at 15℃ with 0.5% protease) with the yields above 50% were selected. Amylose contents did not significantly differ for the control and RST2. Relative to the control, solubilities were higher for all E-RST, but swelling power did not significantly differ for E-RST except for RST1. Although all E-RST revealed higher gelatinization temperatures than the control, the reversed trends were found in the gelatinization enthalpy. The pasting viscosities of all E-RST were lower than those of the control. Consequently, the enzymatic isolation method using protease would be a more time-saving and eco-friendly way of preparing RST than the alkaline steeping method, even though its characteristics are different.