• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.161-165
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• 2007

In this work, Ni thin films with different thickness from $1,523{\AA}\;to\;9,827{\AA}$ were deposited for the application of micro thermal flow sensors by a magnetron sputtering and oxidized through annealing at $450^{\circ}C$ with increasing annealing time. The initial variation of resistivity decreased radically with increasing films thickness, then gradually stabilizes as the thickness increases. The resistivity of Ni thin films with $3,075{\AA}$ increased suddenly with increasing annealing time at $450{\circ}C$, then gradually stabilizes as the thickness increases after the annealing time 9 h. In case of $3,075{\AA}\;and\;9,827{\AA}$ films, the average of TCR values, measured for the operating temperature range of $0^{\circ}C\;to\;180^{\circ}C$, were $2,413.1ppm/^{\circ}C\;and\;4,438.5ppm/^{\circ}C$, respectively. Because of their high resistivity and very linear TCR, Ni oxide thin films are superior to pure Ni and Pt thin films for flow and temperature sensor applications.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.326-329
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• 2007

$CuInS_{2}$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_{2}$ thin films with non-stoichiometry composition. $CuInS_{2}$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/ln/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^{2}/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Journal of the Korean Society for Heat Treatment
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• v.11 no.3
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• pp.216-226
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• 1998

Heat treatment conditions and the formation of microstructures were studied for improving the transformation-induced plasticity(TRIP) effect of retained austenite and mechanical properties of Fe-0.2%C-1.5%Si-1.5%Mn sheet steel. An excellent combination of elongation about 30% and high strength over 760MPa was achieved by processing of intercritical annealing and isothermal holding Intercritical annealing the sheet steel produced fine particles($1{\sim}2{\mu}m$) of retained austenite which were stabilized due to C enrichment by subsequent holding in bainite transformation range. Heat treatment conditions were depended on the shape and distribution of second phases as well as the volume fraction and stability of retained austenrte. In this work, the heat treatment condition of optimal strength-elongation balance was obtained by holding the steel at $400^{\circ}C$ for 200sec, after intercritical annealing at $790^{\circ}C$ for 300sec.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1268-1269
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• 2008

$CuInS_2$ thin films were fabricated by sulpurization of Cu/In Stacked elemental layer deposited onto glass substrates by vacuum annealing at various temperatures. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films by composition ratio. Physical properties of the thin film were investigated at various fabrication conditions; substrate temperature, annealing temperature and annealing time by XRD, FE-SEM and hall measurement system. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1485-1487
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• 1997

Platinum-Cobalt alloy thin films were deposited on $Al_2O_3$ substrates by co sputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on $Al_2O_3$ substrate by lift-off method and investigated the physical and electrical characteristics of these films under sputtering conditions (; the input power, working vacuum), annealing conditions (; temperature, time) and also after annealing these films. After the annealing treatment at $800^{\circ}C$ for 60min, the resistivity and sheet resistivity of Pt-Co thin films was $0.0302{\mu}{\Omega}{\cdot}cm$ and $0.1{\Omega}/{\square}$, respectively, and the TCR value of Pt-Co RTD was $3600ppm/^{\circ}C$ in the temperature range of $25{\sim}400^{\circ}C$. These results indicate that Pt-Co thin films have potential for the excellent RTD temperature sensors.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.908-913
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• 1997

Multilayer NbCxC1-x/Y2O3/Ti were sputter-coated on the alumina substrate, starting with a 0.7 ㎛ thick NbCxC1-x layer grown on substrate, followed by 0.7 ㎛ thick Y2O3 layer and 1 ㎛ thick Ti layer. To find out the optimum conditions for thickness uniformity and adhesion, sputtering works have been done with the variation of sputtering power and Ar pressure. After vacuum annealing at 950℃ and 1000℃, the thermal stability of the NbCxC1-x/Y2O3/Ti coated alumina substrates has been investigated by peel off test. The coating scheme didn't cause any debonded layer after an annealing at 950℃ for 3hrs. However, it was peeled off after annealing at 1000℃ for 3hr. It was found that the thermal stability of Al2O3/NbCxC1-x/Y2O3/Ti coating scheme changed with the NbCxC1-x composition.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.20-24
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• 2015

This study was explained the correlation between the O 1s spectra and the crystallization of ITO thin films. The crystal structure of ITO thin films changed with various annealing temperatures and annealing methods such as atmosphere or vaccum conditions. The amorphous structure observed from XRD pattern showed the O 1s spectra with 531.2 eV, and the crystal structure of annealed ITO films analyzed by XRD pattern had the O 1s spectra of 529.8 eV as lower binding energy then the 531.2 eV. Oxygen in view of ITO films was related to the crystallization, and the ITO films annealed in an atmosphere pressure showed higher crystal structure than the ITO annealed in a vaccum. It was indicated that the amorphous structure had higher binding energy than the crystal structure analyzed by O 1s spectra of ITO films.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.4
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• pp.230-236
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• 2023

The current study deals with the effect of cooling rate and temperature for annealing on medium-carbon Cr-Mo alloy steel, especially for cold heading quality wire rod, to derive the optimum micro-structures for plastic deformation. This is to optimize the spheroidization heat treatment conditions for softening the material. Heat treatment was performed under seven different conditions at a temperature between A_c1 and A_c3, mostly within 720℃ to 760℃, and the main variables at this time were temperature, retention time and cooling rate. Microstructure and phase changes were observed for each test condition, and it was confirmed that they were greatly affected by the cooling rate. It was also confirmed that the cooling rate was changed in the range of 0.1℃/min to 5℃/min and affected by phase deformation and spheroidization fraction. The larger the spheroidization fraction, the lower the hardness, which is associated with the increasing connection of ferrite phases.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.1
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• pp.3-9
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• 2008

Al-Co-N thin films, Al-Co-N/Al-N and Al-Co-N/Al-Co multilayers containing various amounts of Co content were deposited by using a two-facing targets type dc sputtering (TFTS) system. The films were also annealed successively and isothermally at different annealing temperatures. Irrespective of Co content and preparation methods, all the as-deposited films were observed non-magnetized. It was found that annealing conditions can control the magnetic and electrical properties as well as the microstructure of the films.

• Korean Management Science Review
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• v.14 no.1
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• pp.77-85
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• 1997

This paper proposes an approach for individual selection in genetic algorithms to improve problem solving efficiency and effectiveness. To investigate the utility of combining simulated annealing with genetic algorithm, two experiment are conducted that compare both the conventional genetic algorithm and suggested approach. Result indicated that suggested approach significantly reduced the required time to find optimal solution in moderate-sized problems under the conditions studied. It is also found that quality of the solutions generated by suggested approach in large- sized problems is greatly improved.