• Transactions on Electrical and Electronic Materials
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• 제16권2호
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• pp.62-64
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• 2015

We have investigated zinc tin oxide (ZTO) thin films under various silicon ratios. ZTO TFTs were fabricated by solution processing with the bottom gate structure. Furthermore, annealing process was performed at different temperatures in various annealing conditions, such as air, vacuum and wet ambient. Completed fabrication of ZTO TFT, and the performance of TFT has been compared depending on the annealing conditions by measuring the transfer curve. In addition, structure in ZTO thin films has been investigated by X-ray diffraction spectroscopy (XRD) and Scanning electron microscope (SEM). It is confirmed that the electrical performance of ZTO TFTs are improved by adopting optimized annealing conditions. Optimized annealing condition has been found for obtaining high mobility.

• 한국식품저장유통학회지
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• 제19권2호
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• pp.216-222
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• 2012

옥수수 전분의 인산화 가교반응에 의한 RS4 제조 시 최적 annealing 조건을 검토하였다. 전분유에 NaOH를 0.9%, 1.2%, 1.5%/st.ds의 농도가 되게 첨가하고 복합인산염(STMP/STPP 혼합)을 이용하여 인산화 가교반응 할 경우 NaOH 농도가 높을수록 반응 초기에 RS 함량이 빠르게 증가되었으나 NaOH 농도에 상관없이 반응 12시간 후에는 비슷한 RS 함량을 나타내었다. 전분유의 Annealing 처리는 인산화 가교반응 전에 실시하였다. 전분유를 pH 2-10, 온도 $40-60^{\circ}C$, 0-14시간으로 처리한 후 인산화 가교반응을 하였다. Annealing 처리시 pH가 낮을수록 RS 함량이 높아지는 결과를 보였으며 pH 2에서 annealing 온도 $50^{\circ}C$, 2시간 annealing에서 최고의 RS 함량을 나타내었다. 따라서 최적 인산화 가교반응 조건은 먼저 pH 2.0, $50^{\circ}C$에서 2시간 annealing 처리를 한 후 황산나트륨 농도 10%/st.ds, NaOH 농도 1.2%/st.ds 조건에서 12시간 인산화 가교반응을 행하는 것으로 생각된다. RS 함량은 인산염 투입량이 증가함에 따라 직선적으로 증가하였다. 본 연구결과에 의한 최적조건을 활용하여 복합인산염 10%/st.ds의 농도로 RS4를 제조한 결과 RS 함량은 72.3% 였으며 인의 함량은 0.36%/st.ds로 한국 식품첨가물 공전에 적합하여 식품용 소재로 활용이 가능할 것으로 사료된다.

• 소성∙가공
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• 제13권5호
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• pp.449-454
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• 2004

The annealing behavior of a 5083 Al alloy deformed at cryogenic temperature was investigated, focusing on the evolution of microstructures and mechanical properties. Especially, the effects of annealing temperature, $150~300^{\circ}C$, and time, 3∼60min., on microstructures and mechanical properties of the sheets received 85% reduction at cryogenic temperature were investigated. The optimization of the annealing conditions resulted in a mixture of equiaxed grains and elongated subgrains, exhibiting a good combination of uniform elongation and high strength.

• 전기학회논문지P
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• 제66권4호
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• pp.263-266
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• 2017

In this study, the characteristics of anti-pollution coatings on glass substrates through annealing treatment were investigated. To investigate the change of properties by coating method and number of annealing treatment, after the anti-pollution coating was performed on the surface of glass substrate in three ways, the annealing treatment was performed by setting three kinds of annealing treatment conditions. The annealing treatment method is a torch using gas, which is advantage in that it can be installed directly on the site in an easy way compared with a annealing treatment process which is generally difficult. The anti-pollution properties, contact angle, transmittance, hardness, and adhesion of films on glass substrate were measured under 9 conditions of combination of coating methods and annealing treatment conditions. It was confirmed that as the number of annealing treatment increases, the anti-pollution property of the film synthesized on glass substrate becomes better.

• 한국정밀공학회지
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• 제18권1호
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• pp.129-138
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• 2001

This study examined the effects of the annealing heat treatments on the mechanical properties of the Invar(Fe-36%Ni Alloy) materials. Invar materials were annealed at various temperatures range 900~120$0^{\circ}C$ in vacuum(10-4Torr) and hydrogen atmospheres. And annealing conditions were changed by cooling rate and holding time at 110$0^{\circ}C$. The grain size of rolled Invar materials was very fine but those of annealed Invar materials at 900~120$0^{\circ}C$ in vacuum and hydrogen atmosphere increased with increasing annealing temperature. The micro-vickers hardness values of annealed Invar materials were decreased about 15% that of the rolled Invar materials, regardless of the various of annealing temperatures, atmosphere(vacuum, hydrogen) and annealing conditions. The tensile strength and yield strength of annealed Invar materials at 900~120$0^{\circ}C$ in vacuum and hydrogen atmosphere were decreased 10.0~14.4% and 34.6~39.1% those of the rolled Invar materials, respectively. The strength ratio(tensile strength/ yield strength) of annealed Invar materials was improved to 1.7~1.8 from the value of 1.2~1.3 of rolled Invar materials. The degree of spring back of annealed Invar materials was about 50% of the rolled Invar materials, regardless of the various of annealing temperatures, atmosphere(vacuum, hydrogen) and annealing conditions.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.426-429
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• 2003

In this study, phase transformation characteristics of Nitinol shape memory alloy with 54.5wt%Ni-45.5wt%Ti were investigated by varying with annealing treatment and cutting conditions through DSC(differential scanning calorimetry). Annealing treatment conditions were considered as heat treated time of 5 min, 15 min, 30 min, and 45 min, heat treated temperature of 40$0^{\circ}C$, 50$0^{\circ}C$, 5$25^{\circ}C$, 55$0^{\circ}C$, 575$^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$, 80$0^{\circ}C$, and 90$0^{\circ}C$, and environmental condition of heat treatment under vacuum or air. Cutting conditions were considered as no cutting, one side cutting, and two side cutting. Tensile test was also conducted on Nitinol shape memory alloy to investigate thermomechanical characteristics by varying with annealing heat treatment histories. According to the results, annealing treatment and cutting conditions were found to significantly affect on phase transformation and thermomechanical characteristics of Nitinol shape memory alloy.

• 한국안전학회지
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• 제19권1호
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• pp.72-76
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• 2004

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT)thin films are deposited on pt-coated electrode(Pt/$TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with annealing conditions were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at $750^{\circ}C$,/TEX> and grains largely grew in oxygen annealing atmosphere. The maximum renanent polarization and the coercive electric field with annealing conditions are 12.40C/$cm^2$ and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 2.13${\times}10^{-10}A/cm^2$, respectively.

• Journal of information and communication convergence engineering
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• 제3권1호
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• pp.23-27
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• 2005

In this paper, the effects of various annealing conditions on the resonance characteristics of ZnO-based FBAR devices are compared. Several FBAR device samples were fabricated by using three different annealing methods while one sample remained non-annealed as a reference for comparison. Return loss ($S_11$) could be significantly improved by both Bragg reflector-annealing and/or post-annealing. Especially, the use of the combined annealings resulted in most desirable resonance improvement compared with the Bragg reflector-annealing or post-annealing method alone.

• 한국전기전자재료학회논문지
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• 제17권8호
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• pp.859-865
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• 2004

LaNiO$_3$(LNO) thin films on (100) Si substrates are prepared by sol-gel method on heat treatment conditions, such as heat transfer direction, pyrolysis and annealing process, and annealing temperatures and times. The effect of heat treatment conditions on the (100) orientations, structures and resistances of the thin films are investigated by XRD, SEM(FESEM), and a lout probe method. Highly (100) orientation factor(0.97), a pseudocubic crystalline structure with a dense and uniform microstructure could be formed by the following conditions： 1) the heat transfer direction is from Si substrate to LNO, 2) the pyrolysis and annealing process are alternated, 3) the annealing temperature is $650^{\circ}C$ and 4) the annealing times is 3 minutes. The sheet resistance of thin films decreased with increasing of a annealing temperature and time, and a number of coating.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1349-1351
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• 1998

Platinum-Cobalt alloy thin films were deposited on $Al_2O_3$ substrates by r.f. cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the $Al_2O_3$ substrates by lift-off method and investigated the physical and electrical characteristics of these films under various conditions (the input power, working vacuum, annealing temperature, thickness of thin films) and also after annealing these films. At input power of Pt : $4.4 W/cm^2$. Co:6.91W/$cm^2$. working vacuum of 10 mTorr and annealing conditions of $1000^{\circ}C$ and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was $15{\mu}{\Omega}{\cdot}cm$ and $0.5{\Omega}/{\square}$, respectively. The TCR value of Pt-Co alloy thin films was measured with various thickness of thin films and annealing conditions. The optimum TCR value is gained under conditions $3000{\AA}$ of thin films thickness and $1000^{\circ}C$ of annealing temperature. These results indicate that Pt-Co alloy thin films have potentiality for the high resolution RTD temperature sensors.