• 제목/요약/키워드: annealing condition

검색결과 516건 처리시간 0.028초

Physical Property Change of the Gapless Semiconductor $PbPdO_2$ Thin Film by Ex-situ Annealing

  • Choo, S.M.;Park, S.M.;Lee, K.J.;Jo, Y.H.;Park, G.S.;Jung, M.H.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.371-372
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    • 2012
  • We have studied lead-based gapless semiconductors, $PbPdO_2$, which is very sensitive to external parameters such as temperature, pressure, electric field, etc[1]. We have fabricated pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films using the pulsed laser deposition. Because of the volatile element of Pb, it is very difficult to grow the films. Note that in case of $MgB_2$, Mg is also volatile element. So in order to enhance the quality of $MgB_2$, some experiments are carried out in annealing with Mg-rich atmosphere [2]. This annealing process with volatile element plays an important role in making smooth surface. Thus, we applied such process to our studies of $PbPdO_2$ thin films. As a result, we found the optimal condition of ex-situ annealing temperature ${\sim}650^{\circ}C$ and time ~12 hrs. The ex-situ annealing brought the extreme change of surface morphology of thin films. After ex-situ annealing with PbO-rich atmosphere, the grain size of thin film was almost 100 times enlarged for all the thin films and also the PbO impurity phase was smeared out. And from X-ray diffraction measurements, we determined highly crystallized phases after annealing. So, we measured electrical and magnetic properties. Because of reduced grain boundary, the resistivity of ex-situ annealed samples changed smaller than no ex-situ sample. And the carrier densities of thin films were decreased with ex-situ annealing time. In this case, oxygen vacancies were removed by ex-situ annealing. Furthermore, we will discuss the transport and magnetic properties in pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films in detail.

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Fe/CoNbZr 다층박막의 구조 및 열처리 조건에 따른 자기적 특성 (Variation of Magnetic Properties of Fe/CoNbZr with Multilayer Structure and Annealing Condition)

  • 이성래;김은학;김영근
    • 한국자기학회지
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    • 제11권2호
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    • pp.45-49
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    • 2001
  • RF 마그네트론 스퍼터링으로 제조한 Fe/CoNbZr 다층박막의 구조 및 열처리 조건에 따르는 고주파 연자기 특성을 연구하였다. Fe층의 두께가 5nm일 때 1.1Oe의 최소보자력을 얻었으며, Fe층의 두께가 15nm일 때 100Mz에서 2300의 최대 투자율을 얻었으며, 약 20 kG의 높은 포화자화를 얻었다. Fe층의 두께가 증가함에 따라 보자력이 증가하는 것은 결정립 크기에 의한 것이며, Fe층의 두께가 얇을 경우 계면에서의 CoFe과 같은 높은 자기변형의 혼합층 형성으로 인해 투자율이 감소한 것으로 판단된다. 300 $^{\circ}C$에서 40분간 일축자장 열처리를 행하여서 보자력 0.35 Oe, 투자율 2500을 얻었다. 또한 250및 30$0^{\circ}C$ 열처리에서만 연자기 특성이 향상되었다. 이는 최적의 Fe의 격자변형과 일측 이방성의 발달로 자기이방성에너지의 감소에 의한 것으로 판단된다.

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Zr-5Nb 합금의 부식특성에 미치는 미세조직 영향 (Effect of Microstructure on Corrosion Characteristics of Zr-5Nb Alloy)

  • 김현길;최병권;조해동;박정용;정용환
    • 대한금속재료학회지
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    • 제46권8호
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    • pp.482-488
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    • 2008
  • For a better understanding of the correlation between a corrosion and a microstructure, it is necessary to study a phase transformation with an annealing condition for Zr-Nb alloy. Zr-5wt.%Nb alloy with different phase characteristics was prepared with various annealing conditions. A microstructural study and corrosion test were performed to investigate the effect of a phase such as the phase type, fraction, and size on corrosion. The corrosion behavior of the Zr-5Nb alloy was very sensitive to the annealing condition, which affected the formation of the ${\beta}$-phases (${\beta}$-Nb or ${\beta}$. The corrosion rate of the Zr-5Nb alloy annealed at $500^{\circ}C$ with the formation of the ${\beta}$-Nb phase was lower than that of the Zr-5Nb alloy annealed from 600 to $800^{\circ}C$ with the formation of the ${\beta}$-Zr phase. The highest corrosion rate was observed for the ${\beta}$-quenched Zr-5Nb alloy. After a consideration of the corrosion rate and micro structure of the Zr-5Nb alloy, the corrosion resistance of that alloy was improved due to the formation of a small sized ${\beta}$-Nb phase which could be controlled by the annealing condition.

단조품의 등온 어닐링에 따른 미세조직 변화 (The Effect of Isothermal Annealing on Microstructure of Forged Parts)

  • 김동배;이종훈
    • 열처리공학회지
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    • 제13권5호
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    • pp.303-308
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    • 2000
  • The ring gears of automobile parts are manufactured generally process chart of which is as follows : forging ${\rightarrow}$ annealing or normalizing ${\rightarrow}$ rough machining ${\rightarrow}$ hardening(Quenching-Tempering or carburizing process) ${\rightarrow}$ finish machining. Isothermal annealing process after forging is most effective in the side of improvment of machinability. On this study we selected two kinds of steel;SCM415, SCM435 of most universal and investigated microstructures to find out most suitable condition of heat treatment in proportion continuous cooling and isothermal annealing. As the cooling rate is $5^{\circ}C$ per minute in continuous cooling process, martensite and bainite are coexisted with ferrite and pearlite in SCM435 steel. If the cooling rate is slower than $5^{\circ}C$ per minute, microstructure were only ferrite and pearlite but formation of band structure can't be avoid. On the other hand, microstructure is only ferrite and pearlite regardless of cooling rate because carbon content of SCM415 steel is low. Moreover formation of band structure isn't exposed by faster cooling rate. Most optimal temperature of the isothermal annealing is from $650^{\circ}C$ to $680^{\circ}C$ in SCM435 steel. When holding time is 60 minute with $650^{\circ}C$, the identical ferrite and pearlite microstructures can be obtained.

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극저탄소강판의 자성에 미치는 변형소둔 결정립도의 영향 (Effects of Strain Annealing Grain Size on the Magnetic Properties of Extra-Low Carbon Steel)

  • 안성권;정원섭;박정웅
    • 열처리공학회지
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    • 제19권4호
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    • pp.208-218
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    • 2006
  • The effects of the grain size on the magnetic properties in extra-low carbon steel after strain annealing were investigated. Two kinds of sample were prepared. One is the annealed sheet, which was annealed at $670^{\circ}C$ and $850^{\circ}C$ for various time periods after cold rolling. The other is the strain annealed sheet, which was temper rolled by 0.4% and subsequently strain annealed at the temperature ranging between $670^{\circ}C$ and $850^{\circ}C$ for various time periods. The grains after strain annealing became more coarse than those after primary annealing. The grains were coarsened due to the strain induced grain boundary migration (SIGM). It was found that the permeability tended to be increased and coercivity tended to be decreased with the increase of grain size. The optimum magnetic properties was achieved after strain annealing at $850^{\circ}C$ for 30 minites. Under this condition, the coercivity was measured to be 0.6 and the permeability was measured up to be 13000.

전기화학적 방법을 이용한 Ti(Grade 2)재의 최적 어닐링 열처리에 대한 연구 (A Study of Annealing Heat-treatment for Ti(Grade 2) by Electrochemical Methods)

  • 백신영
    • Journal of Advanced Marine Engineering and Technology
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    • 제26권1호
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    • pp.90-98
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    • 2002
  • In this paper, the annealing heat treatments for the best corrosion resistant of Ti(Grade 2) were studied in a 3.5% NaCl solution by electrochemical methods. The annealing heat treatments were accomplished at 650, 700 and $750^{\circ}C$ with different time of 30min., 1hour and 2 hours in a vacuum condition. The obtained results are: 1) in the case of solution heat treated $930^{\circ}C$ for 2 hours in a vacuum and air, the corrosion potentials were -348.7 and -567. 1mV, and current densities 2.32 and $22.62\mu\textrm{A}$, respectively, 2) as increase both annealing heat treatment temperature 650, 700, $750^{\circ}C$ and time 30min., 1 hour, 2 hours, the corrosion potential were decreased, whereas corrosion current density increased, 3) in the case of cyclic polarization, the measured charges were increased as increasing solution heat treatment temperature and time, 4) on the bases of corrosion potential, current density and charge, the best annealing temperature and time were measured as $700^{\circ}C$ and 30min. for Ti(Grade 2) material.

급속 후 열처리 및 실리콘기판 배향에 따른 MOCVD-TiO2박막의 구조적.전기적 특성 (Effect of Rapid Thermal Annealing and Orientation of Si Substrate on Structural and Electrical Properties of MOCVD-grown TiO2 Thin Films)

  • 왕채현;최두진
    • 한국세라믹학회지
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    • 제35권1호
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    • pp.88-96
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    • 1998
  • The structural and electrical properties of titanium dioxide(TiO2) thin films deposited on p-type (100) si and 4$^{\circ}$off(100) Si substartes by metalorganic chemical vapor deposition (MOCVD) have been studied with post rapid thermal annealing. TiO2 thin films of anatase phase were grown at 300-500$^{\circ}C$ using titanium post rapid thermal annealing at a temperature of 800$^{\circ}C$ for 30sec. rutile phase was observed in the condition of the deposition temperature over 350$^{\circ}C$ in the ambient air atmosphere and at 500$^{\circ}C$ in cacuu,. SEM and AFM study show-ed surface roughness were increased slightly from 40${\AA}$to 55${\AA}$ after annealing due to grain growth and phase transformation. From capacitane-voltage measurement of Al/TiO2./p-Si structure after annealing we obtained ideal capacitance-voltage characteristics of MOS structure with dielectric constant of 16-22 in case of (100) Si and about 30- in case of 4$^{\circ}$off(100) Si but showed the higher leakage current.

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Physical effect of annealing conditions on soluble organic semiconductor for organic thin film transistors

  • Kim, Dong-Woo;Kim, Doo-Hyun;Kim, Keon-Soo;Kim, Hyung-Jin;Lee, Dong-Hyuck;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.268-269
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    • 2008
  • We have examined the effect of physical drying and annealing conditions for the soluble derivatives of polythiophene as p-type channel materials of organic thin film transistors (OTFTs) in our special designed drying system; performances of the jetting-processed OTFTs can be improved more than 10 times just by optimizing the physical conditions of drying and annealing.

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ITO 기판에 제작된 PLZT 박막의 소성온도에 따른 특성 (Annealing-temperature Dependent Characteristics of PLZT Thin Films on ITO Coated Glass)

  • 최형욱;장낙원;박창엽
    • 한국전기전자재료학회논문지
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    • 제11권2호
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    • pp.128-132
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    • 1998
  • 2/65/35 PLZT stock solution prepared by Sol-Gel processing was spin-coated on ITO coated glass and annealed by RTA(Rapid Thermal Annealing). The crystal structure of films was reported based on the observation of crystallization process and microstructure of the film fabricated at different fabrication condition. Films were crystallized into rhombohedral structure by annealing at $750^{\circ}C$ for 5 min. As the annealing temperature increased, the size of rosette structure of the films was grown up from $2.4{\mu}m$ to $15{\mu}m$, dielectric constant was increased, coercive field was decreased 33.82 kV/cm, remnant polarization was increased to 39.84 ${\mu}C/cm^2$ and Optical transmittance was decreased.

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메로리 소자 응용을 위한 펄스 레이저 증착법으로 제작된 PLT박막의 열처리 효과 (Annealing Effect of Pb(La, Ti)$O_3$Thin Films Grown by Pulsed Laser Deposition for Memory Device Application)

  • 허창회;심경석;이상렬
    • 한국전기전자재료학회논문지
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    • 제13권9호
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    • pp.725-728
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    • 2000
  • Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, We have systematically investigated the variation of grain sizes depending on the process condition of two-step process. Both in-situ annealing and ex-annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current, XRD and SEM were performed to investigate the electircal properties and microstructural properties of Pb(La, Ti)O$_3$ films.

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