• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.589-592
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• 2002

The $Sr_{0.7}Bi_{2.3}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO2/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealing atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40{\mu}C/cm^2$ and 48kV/cm respectively. The dielectric constant and leakage current density annealing in oxygen atmosphere are 340 and $6.81{\times}10^{-10}A/cm^2$ respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.77-81
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• 2003

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and $2.13{\times}10^{-9}[A/cm^2]$ respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.207-213
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• 2003

The Sr$\_$0.7/Bi$\_$2.6/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grain largely grew in oxygen annealing atmosphere. The maximum remnant polarization and the coercive electric field in oxygen annealing atmosphere are 12.40[${\mu}$C/cm$^2$] and 30[kV/cm] respectively. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and 2.13${\times}$10$\^$-9/ [A/cm$^2$] respectively. The fatigue characteristics of SBT capacitors did not change up to 10$\^$10/ switching cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.72-76
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• 2003

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40[{\mu}C/cm^2]$ and 30[kV/cm] respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1176-1180
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• 1994

The sliding wear behavior of the plasma-sprayed zirconia containing 3 mol% yttria was investigated after the annealing at room temperature to 80$0^{\circ}C$ in various concentrations of humid atmosphere as laboratory, humid, dry argon atmosphere. Both of the friction coefficient and the wear loss increased with increasing temperature up to 80$0^{\circ}C$. Surface morphology of the worn samples changed with annealing temperature. The change of monoclinic/tetragonal (m/t) x-ray peak intensity ratio effected the wear behavior. The m/t ratio had maximum value at 20$0^{\circ}C$ and decreased with increased temperature in laboratory and humid atmosphere. In argon atmosphere the m/t ratio had no maximum value and decreased with increasing temperature. At all the annealing temperature humid atmosphere had more the m/t ratio value than any other atmosphere. The change of toughness was showed the inversed result of m/t ratio change. The results indicated that the resudial stress which was induced by the different amount of phase transformation takes a detrimental role in wear behavior.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.1
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• pp.129-138
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• 2001

This study examined the effects of the annealing heat treatments on the mechanical properties of the Invar(Fe-36%Ni Alloy) materials. Invar materials were annealed at various temperatures range 900~120$0^{\circ}C$ in vacuum(10-4Torr) and hydrogen atmospheres. And annealing conditions were changed by cooling rate and holding time at 110$0^{\circ}C$. The grain size of rolled Invar materials was very fine but those of annealed Invar materials at 900~120$0^{\circ}C$ in vacuum and hydrogen atmosphere increased with increasing annealing temperature. The micro-vickers hardness values of annealed Invar materials were decreased about 15% that of the rolled Invar materials, regardless of the various of annealing temperatures, atmosphere(vacuum, hydrogen) and annealing conditions. The tensile strength and yield strength of annealed Invar materials at 900~120$0^{\circ}C$ in vacuum and hydrogen atmosphere were decreased 10.0~14.4% and 34.6~39.1% those of the rolled Invar materials, respectively. The strength ratio(tensile strength/ yield strength) of annealed Invar materials was improved to 1.7~1.8 from the value of 1.2~1.3 of rolled Invar materials. The degree of spring back of annealed Invar materials was about 50% of the rolled Invar materials, regardless of the various of annealing temperatures, atmosphere(vacuum, hydrogen) and annealing conditions.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.274-278
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• 1997

(Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.

• Industry Promotion Research
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• v.1 no.1
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• pp.7-11
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• 2016

It was the electrical properties of IGZO prepared by the annealing in a vaccum and an atmosphere conditions to research the current-voltage characteristics. The IGZO film annealed in a vaccum became an amorphous structure but films annealed in an atmosphere condition had a crystal structure. Because of the content of oxygen vacancies during the annealing processes was changed, and the annealing in an atmosphere condition increased the oxygen vacancy in IGZO. Oxygen vacancy in IGZO increased the current and then it was observed the Ohmic contact at IGZO annealed in an atmosphere conditions. However, the IGZO prepared in a vaccum showed the Schottky contact.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.381-389
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• 1989

Effects of annealing temperature, time, and atmospehre on the flow characteristics of Atmospheric Pressure Chemical Vapor Deposition-borophosphosilicate glass were investigated. Stable step coverage can be obtained by annealing the BPSG film at 90$0^{\circ}C$ for 30 minutes in N2 atmosphere, but further heat treatment isnot effective. Flow characteristics of the BPSG film was better in steam atmosphere than in N2 atmosphere, and the factors which cause it were analyzed. The concentration of boron in the BPSG film was measured pretty accurately by FTIR spectrum. Boron content in the BPSG film was reduced by annealing treatment. The decrement of boron was greater in steam atmosphere than in the N2 atmosphere. Also it was found from the FTIR spectroscopic analysis that PH3 inhibited the oxidation of B2H6.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.168-173
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• 2000

YMnO3 thin films were prepared on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized by heat-treatment at 85$0^{\circ}C$ for 1 hour. Effects of an annealing atmosphere(O2, Ar, vacuum) on the crystallization behavior and electridcal properties were investigated. YMnO3 thin films annealed under Ar atmosphere showed a superior crystallinity and a very strong c-aix preferred-orientation which was a polar axis. Leakage current density of the films decreased with lowering oxygen partial pressure of the annealing atmosphere. C-V and P-E ferroelectric hysteresis were observed only in the thin film heat-treated under Ar atmosphere.In order to prepare YMnO3 thin films having both low leakage current and ferroelectricity, the annealing atmsphere should be kept under a proper oxygen partial pressure which was about 1 Pa in this work. Leakage current density at 1 volt, dielectric constant($\varepsilon$r), remanent polarization(Pr), and coercive field(Ec) were 1.7$\times$10-8 A/$\textrm{cm}^2$, 25, 1.08$\mu$C/$\textrm{cm}^2$, and 100 kV/cm, respectively.