• 한국결정성장학회지
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• 제17권1호
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• pp.11-17
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• 2007

The spherical NiZn ferrite particles were prepared by ultrasonic spray pyrolysis with mixed solution of aqueous metal nitrates. The NiZn ferrite particle was observed with nano-sized primary particles of about 10 nm or less before annealing which represented as paramagnetic behavior measured at 77 K and room temperature. The typical abnormal growth of primary particles like polyhedral primary particles was observed by annealing at 1273 K with Zn-concentration dependency. The XRD patterns showed good crystallinity of NiZn ferrite powder after annealing. In annealing process, the intra-particle sintering phenomenon was observed and the spherical particle morphology was collapsed at 1673 K. The saturation magnetization of NiZn ferrite powder for each annealing temperature was decreased with measuring temperature of $77{\sim}$300K.

• International Journal of Fuzzy Logic and Intelligent Systems
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• 제11권3호
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• pp.178-183
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• 2011

The deterministic annealing-based clustering algorithm is an EM-based algorithm which behaves like simulated annealing method, yet less sensitive to the initialization of parameters. Pairwise clustering is a kind of clustering technique to perform clustering with inter-entity distance information but not enforcing to have detailed attribute information. The pairwise deterministic annealing-based clustering algorithm repeatedly alternates the steps of estimation of mean-fields and the update of membership degrees of data objects to clusters until termination condition holds. Lacking of attribute value information, pairwise clustering algorithms do not explicitly determine the centroids or medoids of clusters in the course of clustering process or at the end of the process. This paper proposes a method to identify the medoids as the centers of formed clusters for the pairwise deterministic annealing-based clustering algorithm. Experimental results show that the proposed method locate meaningful medoids.

• 대한기계학회논문집
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• 제3권2호
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• pp.43-47
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• 1979

This paper presents the effect of stress relief annealing on mechanical properties in single Vee-groove welding joint. In this experiment, the investigation of annealing effect on mechanical properties of test material carried out by changing the annealing temperature from $600^{\circ}C$ to $900^{\circ}C$ under the given conditions. The results pbtained by this study are as follows: (1) Under the constant welding conditions, the tensile strength of test welded joint decrease in accordance with the increase of annealing temperature. The experimental results show that the reduction rate of tensile strength is about 35.09% of base metal strength. (2) Microhafdness distribution of welded joint bring about the maximum hardness near the bended line of welding joint. (3) Izod impact energy of welded joint in increase in according to the rise of annealing temperature and the peak energy of impact test occurs at $800^{\circ}C$

• 한국재료학회지
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• 제13권11호
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• pp.721-724
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• 2003

A Fe-Si-B-Ni amorphous alloy manufactured by one roll melt-spinning method showed the crystallization temperature difference of a maximum $10^{\circ}C$ according to each lot. This temperature difference had a considerable influence on the annealing process to be conducted for obtaining the proper inductance of the alloy. The proper annealing temperature of the alloy was $480^{\circ}C$ and the annealing time increased as the crystallization temperature increased. The activation energy measured by Kissinger method increased as the crystallization temperature increased. Therefore, the annealing process must be adjusted by the crystallization temperature difference of the amorphous alloy.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권4호
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• pp.260-264
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• 2010

In this paper, Ni silicide is formed on boron cluster ($B_{18}H_{22}$) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on $B_{18}H_{22}$ implanted Si substrate exhibited greater sheet resistance than on the $BF_2$ implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using $N_2$ annealing.

• 동력기계공학회지
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• 제2권3호
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• pp.60-67
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• 1998

Edge detection is the first step and very important step in image analysis. We cast edge detection as a problem in cost minimization. This is achieved by the formulation of a cost function that evaluates the quality of edge configurations. The cost function can be used as a basis for comparing the performances of different detectors. This cost function is made of desirable characteristics of edges such as thickness, continuity, length, region dissimilarity. And we use a simulated annealing algorithm for minimum of cost function. Simulated annealing are a class of adaptive search techniques that have been intensively studied in recent years. We present five strategies for generating candidate states. Experimental results(building image and test image) which verify the usefulness of our simulated annealing approach to edge detection are better than other operator.

• Journal of Multimedia Information System
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• 제2권1호
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• pp.179-186
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• 2015

This paper describes the application of a simulated annealing to a random signal-based learning. The simulated annealing is used to generate the reinforcement signal which is used in the random signal-based learning. Random signal-based learning is similar to the reinforcement learning of neural network. It is poor at hill-climbing, whereas simulated annealing has an ability of probabilistic hill-climbing. Therefore, hybridizing a random signal-based learning with the simulated annealing can produce better performance than before. The validity of the proposed algorithm is confirmed by applying it to two different examples. One is finding the minimum of the nonlinear function. And the other is the optimization of fuzzy control rules using inverted pendulum.

• 전자공학회논문지A
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• 제30A권8호
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• pp.34-41
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• 1993

Effect of high temperature annealing conditions on Ta$_{2}O_{5}$ thin films was investigated. Ta$_{2}O_{5}$ thin films were deposited on P-type silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using tantalum ethylate. Ta(C$_{2}H_{5}O)_{5}$, and nitrous oxide. N$_{2}$O. The microstructure changed from amorphous to polycrystalline above 700.deg. C annealing temperature. The refractive index, dielectric onstant and leakage current of the film increased as annealing temperature increased. However, annealing in oxygen ambient reduced leakage currents and dielectric constant due to the formation of interfacial SiO$_{2}$ layer. By optimizing annealing temperature and ambient, leakage current lower than 10$^{-8}$ A/cm$^{2}$ and maximum capacitance of 9 fF/${\mu}m^{2}$ could be obtained.

• Journal of Information Display
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• 제11권1호
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• pp.12-16
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• 2010

The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.

• 한국세라믹학회지
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• 제43권3호
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• pp.185-192
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• 2006

The effects of annealing on structural and electrical properties of ITO/PES (Indium Tin Oxide/Polyethersulfone) films was investigated. Amorphous ITO thin films were grown on plastic substrates, PES using low temperature DC magnetron sputtering. Various post annealing techniques were attempted to research variations of microstructure and electrical properties: i) conventional thermal annealing, ii) excimer laser annealing, iii) UV irradiation. The electrical properties were obtained using Hall effect measurements and DC 4-point resistance measurement. The microstructural features were characterized by FESEM, XRD, Raman spectroscopy in terms of morphology and crystallinity. Optimized UV treatment exhibits the enhanced conductivity and crystallinity, compared to those of conventional thermal annealing.