• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.998-1001
• /
• 2004

ZnO, $SnO_2$ 타겟 각각의 RF 파워를 50 W, 38 W로 고정시킨 후 combinatorial RF magnetron sputtering법을 사용하여 기판 위치에 따라서 조성 구배를 주어 여러 가지 조성의 Zn-Sn-O(ZTO) 박막을 제작하였다. 시편의 열처리에 따른 물성 변화를 분석하기 위해 Rapid Thermal Annealer(RTA)을 이용하여 450, $650{^\circ}C$의 온도 및 $10^{-2}$ Ton의 진공 분위기에서 각각 1 시간 동안 열처리하였다. XRD 분석 결과 상온에서 제작된 ZTO 박막은 Sn 18 at%의 조성을 갖는 시편을 제외하고 모두 비정질상으로 나타났다. $450^{\circ}C$에서 열처리 후 구조적인 변화는 보이지 않았으나, 캐리어 농도와 이동도는 증가하였으며 Sn 54 at%의 조성에서 최고 $25.4cm^2/Vsec$의 전자 이동도를 나타내었다. $26{\leq}Sn$ $at%{\leq}65$의 조성 범위를 갖는 박막은 가시광 영역에서 80 % 이상의 투과도를 가졌으며 $650^{\circ}C$에서 결정화가 되면서 투과도가 증가하였다.

• Journal of Sericultural and Entomological Science
• /
• v.38 no.1
• /
• pp.7-12
• /
• 1996

Reproducible the random amplified polymorphic DNAs(RAPDs) patterns were obtained in the two silkworm strains(J111, Galwon) by adjusting concentration optimized of Taq DNA polymerase(one unit), dNTP(200$\mu$M), MgCl2(1.5mM) and template DNA(30ng). In addition, anealing temperature ranging 35$^{\circ}C$ to 42$^{\circ}C$ by the adjusted condition was investigated and fixed at 35$^{\circ}C$ in this study. Variation among individuals and between male and female of Jam 113 strain was not authorized. DNA polymorhpisms among silkworms were authorized by five RAPD markers using OPM04 random primer. Using the primer showing polymorhpims between parents(J111, Galwon) in thirty three individuals, RAPD-PCR for F2 analysis was performed and segregated 3 : 1 in the F2 population. Consequently, RAPDs detected in the parents were obtained as genetic markers, which can be used for construction of genetic map for this industrially particular insect, silkworm Bombyx mori

• Korean Chemical Engineering Research
• /
• v.44 no.4
• /
• pp.399-403
• /
• 2006

There has been numerous reports for the synthesis of mesoporous $TiO_2$ thin films due to not only the high surface area and regular mesoscale pores but also wide band gap and photo activity. However, the synthesis has been restricted by the limited reproducibility mainly due to the extraordinarily fast hydrolysis and condensation rate of titania precursors. In this report, molar composition of reaction batch (HCl/Ti and Ti/P123) and exterior condition (humidity and temperature) during coating and anealing process. Thereafter, the mesoporous $TiO_2$ thin films were characterized by XRD and TEM

• Journal of the Korean Electrochemical Society
• /
• v.14 no.3
• /
• pp.125-130
• /
• 2011

We describe that the surface and thickness of nanoporous $WO_3$ fabricated by both light-induced and light-absent anodization are affected by pre-annealing process from $200^{\circ}C$ to $600^{\circ}C$. As a result, the nanoporous $WO_3$ with a thickness of $1.83{\mu}m$ can be achieved by anodization for 6 hours after pre-annealing at $400^{\circ}C$ without illumination of light. Moreover, the thickness of nanoporous $WO_3$ fabricated by pre-annealing is thicker than that of $WO_3$ prepared by non-annealing process. However, the light illumination during anodization leads to convert the crystalline structure obtained by pre-annealing, which interfere the growth of nanoporous $WO_3$. In this paper, we discuss about the growth mechanism of these different nanoporous $WO_3$ films.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.6
• /
• pp.263-270
• /
• 2001

The mechanical and electrical properties of the hot-pressed and annealed ${\beta}-SiC-TiB_2$,/TEX> electroconductive ceramic composites were investigated as function as functions of the liquid forming additives of $Al_2O_3+Y_2O_3$. The result of phase analysis of composites by XRD revealed ${\alpha}$-SiC(6H), $TiB_2$,/TEX>, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents in pressureless annealing method because YAG of reaction between $Al_2O_3$ was increased. The flexural strength showed the highest value of 458.9 MPa for composites added with 4 wt% $Al_2O_3+Y_2O_3$ additives in pressed annealing method at room temperature. Owing to crack deflection, crack bridging, phase transition and YAG of fracture toughness mechanism, the fracture toughness showed 7.1 MPa ${\cdot}\;m^{1/2}$ for composites added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $6.0{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm(25\'^{\circ}C}$ and $3.0{\times}10^{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature, respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from 25 $^{\circ}C$ to 700 $^{\circ}C$.