• 제목/요약/키워드: anealing

검색결과 15건 처리시간 0.018초

정련법을 이용한 하이퍼그래프 분할 (Hypergraph Partitioning By Using Reodered Simulated-anealing)

  • 김상진;류명춘;정영석
    • 디지털산업정보학회논문지
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    • 제9권4호
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    • pp.11-19
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    • 2013
  • In this paper we present a reodered simulated-anealing algorithm which is capable of applying odering based k-way partitioned clusters. This method is used for improvement of the objectives of partitioning which are k-way partitioned by using odering algorithm. It changes the positions of the clusters and the vertices in each clusters. Reodered vertices are splitted by using DP-RP method and this process has an opportunity to improve the objective functions. This algorithm has advantages to improve the quality of the solutions for various purposes. Experimental results on several graphs demonstrate that proposed algorithm provides substantial enhancement.

산화알루미늄 박막의 두께 및 열처리 온도에 따른 Al2O3/GaN MIS 구조의 전기적 특성 변화 (Change in Electrical Properties of Al2O3/GaN MIS Structures according to the Thickness of Al2O3 Thin Film and Annealing Temperature)

  • 곽노원;이우석;김가람;김현준;김광호
    • 한국전기전자재료학회논문지
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    • 제22권6호
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    • pp.470-475
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    • 2009
  • We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.

펄스형 레이저를 비정질 와이어 거대 자기교류저항전류 향상 (Enhanced Giant Magnetoimpedance in Co-based Microwire by Pluse Nd:YAG laser)

  • 이봉상;김철기;김종오;임영우;김란;김기덕;안승준;윤석수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 초전도 자성체
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    • pp.76-78
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    • 2002
  • The influence of laser annealing on gaint magnetoimpedance effect of glass-covered Co-based amorphous microwires is investigated by illuminating pulse Nd:YAG laser on the etched microwires. The maxium GMI ratio reaches maximum of around 85 % at the frequency of 5 MHz for the sample iluminated by the pulse with laser energy fo 132 mJ/pulse.

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초음파 분무 열분해법으로 제조한 ZnO막의 전기적, 구조적 특성에 미치는 인듐 확산 효과 (Indium Diffusion Effects on the Structural and Electrical Properties of ZnO Films Prepared by Ultrasonic Spray Pyrolysis)

  • 심대근;배성찬;마대영
    • 한국전기전자재료학회논문지
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    • 제14권10호
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    • pp.828-834
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    • 2001
  • Zinc oxide (ZnO) films deposited on indium (In) films were post-annealed in a rapid thermal anealing (RTA) system. The ZnO/In films were RTA-treated in air or a vacuum ambient. The crystallographic properties and surface morphologies of the films were studied before and after the RTA by X-ray diffraction(XRD) and scanning electron microscopy (SEM), respectively. The resistivity variation of the films with RTA temperature and time was measured by the 4-point probe method. Auger electron spectroscopy (AES) was carried out to figure out the redistribution of indium atoms in the ZnO films. The resistivity of the ZnO/In films decreased to 2$\times$10$\^$-3/ Ωcm by diffusion of the In. The In diffusion into the ZnO films roughened the surface of ZnO films. The results of depth profile by AES showed a hump of In atoms around ZnO/In interface after the RTA at 800 $\^{C}$. The effects of temperature time and ambient during the RTA on the structural and electrical properties of the ZnO/In films were discussed.

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열간 압연 후 어닐링처리한 Mg 합금의 인장강도와 감쇠능과의 관계 (Relationship between Tensile Strength and Damping Capacity of Annealed Magnesium Alloys after Hot Rolling)

  • 이규현;오은지;김권후;김재남;강창룡
    • 열처리공학회지
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    • 제27권6호
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    • pp.295-301
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    • 2014
  • In this study, the relationship between strength and damping capacity of annealed magnesium alloys after hot rolling was investigated. The microstructure of hot rolled magnesium consisted of dendrite structure and $Mg_{17}Al_{12}$ compounds precipitated along the grain boundary. The dendrite structure was dissipated, $Mg_{17}Al_{12}$ compounds was decomposed by annealing, and then its dissolved in ${\alpha}$-Mg. With an increasing the annealing temperature and time, strength was slowly decreased and damping capacity was slowly increased by the growth of grain size and decreasing of defects induced by hot rolling. In annealing treatmented magnesium alloys after hot rolling, damping capacity was decreased rapidly with an increase of strength. There was on proportional relationship between tensile strength, and damping capacity.

직접 패터닝 기술을 이용한 $TiO_2$ 나노 패턴 형성

  • 윤경민;양기연;이헌
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.58.1-58.1
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    • 2009
  • 나노 임프린트 리소그래피 기술은 기존의 노광 장비를 이용하는 기존의 리소그래피 공정에 비해 저렴한 공정으로 대면적 패터닝이 가능한 차세대 리소그래피 기술이다. 나노 임프린트 리소그래피는 기존의 나노 리소그래피 기술과는 다르게 기능성 무기물 물질을 직접 패터닝 할 수 있는 기술이다. 본 연구에서는 $TiO_2$ 나노 패턴을 를 기존의 증착, 리소그래피, 식각 등의 공정을 거치지 않고, sol-gel법과 나노 임프린트 리소그래피를 이용하여 직접 전사하는 기술에 대해 연구 하였다. 본 연구에서는 Tetrabutylorthotitanate를 precusor로 하는 ethanol 기반의 $TiO_2$ sol을 제작하여 이용하였다. PDMS mold를 임프린팅용 몰드로 사용하였으며, 이러한 PDMS mold는 노광 기술과 반응성 이온 식각을 이용하여 제작된 master mold로 부터 복제되었다. 제작된 sol을 Si wafer에 spin coating하여 넓게 도포한 후, wafer위에 PDMS mold를 밀착 시킨다. 이후, 5 bar의 압력과 $200^{\circ}C$의 온도에서 나노 임프린트 리소그래피 공정을 진행하여 $TiO_2$ gel 패턴을 형성한다. gel 상태의 $TiO_2$ 패턴을 anealing 공정을 통해 다결정질 TiO2 나노 패턴으로 제작하였다. 제작된 패턴을 scanning electron microscope(SEM)를 이용하여 확인하고, XRD 및 EDX를 이용하여 분석하였다.

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다공성 Co3O4/RuO2 복합체 합성 및 전기화학적 특성 (Synthesis and Electrochemical Characterization of Porous Co3O4/RuO2 Composite)

  • 임혜민;류광선
    • 한국재료학회지
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    • 제22권3호
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    • pp.118-122
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    • 2012
  • We synthesized porous $Co_3O_4/RuO_2$ composite using the soft template method. Cetyl trimethyl ammonium bromide (CTAB) was used to make micell as a cation surfactant. The precipitation of cobalt ion and ruthenium ion for making porosity in particles was induced by $OH^-$ ion. The porous $Co_3O_4/RuO_2$ composite was completely synthesiszed after anealing until $250^{\circ}C$ at $3^{\circ}C$/min. From the XRD ananysis, we were able to determine that the porous $Co_3O_4$/RuO2 composite was comprised of nanoparticles with low crystallinity. The shape or structure of the porous $Co_3O_4/RuO_2$ composite was studied by FE-SEM and FE-TEM. The size of the porous $Co_3O_4/RuO_2$ composite was 20~40 nm. From the FE-TEM, we were able to determine that porous cavities were formed in the composite particles. The electrochemical performance of the porous $Co_3O_4/RuO_2$ composite was measured by CV and charge-discharge methods. The specific capacitances, determined through cyclic voltammetry (CV) measurement, were ~51, ~47, ~42, and ~33 F/g at 5, 10, 20, and 50 mV/sec scan rates, respectively. The specific capacitance through charge-discharge measurement was ~63 F/g in the range of 0.0~1.0 V cutoff voltage and 50 mAh/g current density.

전극함몰형 실리콘 태양전지의 제작시 스프레이 방법에 의한 타이타늄 옥사이드층의 적용에 관한 연구 (Titanium dioxide by spray deposition for buried contact silicon solar cells fabrication)

  • A.U. Ebong;S.H. Lee
    • 한국결정성장학회지
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    • 제6권2호
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    • pp.263-274
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    • 1996
  • 타이타늄 옥사이드층을 태양전지의 표면 보호막으로 사용시, 그 적합성에 대해 조사하였다. 스프레이법으로 형성된 타이타늄 옥사이드의 박막층은 태양전지 제조 과정중 사용되는 화학약품에 잘 견디며, 이 층을 사용함으로서 고온산화공정을 줄일 수 있다.

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