• Korean Chemical Engineering Research
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• v.49 no.5
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• pp.548-553
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• 2011

NCO terminated polyurethane prepolymers were synthesized from isophorone diisocyanate(IPDI), polycarbonate diol(PCD) and dimethylol propionic acid(DMPA). Subsequently, acrylic terminated polyurethanes were prepared by capping the NCO groups of polyurethane prepolymers with different types of acrylate monomers, such as 2-hydroxyethyl methacrylate(HEMA), 2-hydroxyethyl acrylate(HEA) and pentaerythritol triacrylate(PETA). The average particle sizes of the acrylic terminated polyurethane solutions were increased by capping acrylate monomers. Also, the prepared coating films showed better abrasion resistance and pencil hardness than those of pure waterborne polyurethanes. The coating film with PETA exhibited the best abrasion resistance and pencil hardness of coating films prepared with three acrylate monomers.

• Korean Chemical Engineering Research
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• v.50 no.2
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• pp.191-197
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• 2012

Acrylic terminated polyurethane prepolymers were synthesized by capping the NCO groups of polyurethane prepolymers, prepared from isophorone diisocyanate (IPDI), polycarbonate diol (PCD) and dimethylol propionic acid (DMPA), with pentaerythritol triacrylate (PETA). Subsequently, silylated acrylic terminated prepolymers were prepared by capping the NCO groups of acrylic terminated polyurethane prepolymers with different types of silane coupling agents, glycidoxypropyl trimethoxysilane (GPTMS) or aminopropyl triethoxysilane (APS). The average particle size of pure waterborne polyurethane solution, measured by the dynamic light scattering method, was increased from 14.3 nm to 208.6 nm by adding PETA and APS. Also, the coating film of silylated acrylic terminated waterborne polyurethane showed better abrasion resistance and pencil hardness than that of pure waterborne polyurethane.

• Progress in Superconductivity and Cryogenics
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• v.6 no.4
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• pp.1-4
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• 2004

Three group samples with difference thickness of $CeO_2$ capping layer deposited by PLD were studied. Among them, one group $CeO_2$ films were deposited on stainless steel tape coated with IBAD- YSZ and $CeO_2$ buffer layer ($CeO_2$/IBAD-YSZ/SS); other two groups of $CeO_2 YSZ Y_2O_3$multi-layer were deposited on NiW substrates for fabrication of YBCO coated conductor through RABiTS approach. The pulsed laser deposition (PLD) and DC magnetron sputtering were employed to deposit these buffer layers. On the top of buffer layer, YBCO film was deposited by PLD. The effect of thickness of $CeO_2$ film on the texture of $CeO_2$ film and critical current density ($J_c$) of YBCO film were analyzed. For the case $CeO_2$ on $CeO_2$/IBAD-YSZ/SS, there was a self-epitaxy effect with the increase of $CeO_2$ film. For $YSZ/Y_2O_3$ NiW which was deposited by PLD or DC magnetron sputtering, there is not self-epitaxy effect. However, the capping layer of $CeO_2$ film deposited by PLD improved the quality of buffer layer for $YSZ/Y_2O_3$ which was deposited by DC magnetron sputtering, therefore increased the $J_c$ of YBCO film.

• Korea-Australia Rheology Journal
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• v.12 no.2
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• pp.93-100
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• 2000

The interactions between methylated $\beta$-cyclodextrin (CD) and hydrophobically modified alkali-soluble associative polymers (HASE) were examined by a rheological technique. The effect of "capping" of hydrophobes by methylated $\beta$-cyclodextrin on the viscosity and modulus was evaluated. Model HASE polymers with $C_1$to $C_{20}$ alkyl hydrophobic groups ethoxylated with~10 moles of ethylene-oxide (EO 10) and at concentrations up to 3 wt% were examined. With the addition of methylated $\beta$-CD, the steady shear viscosity profiles shift from a Newtonian profile to one that display a shear-thinning characteristic. Significant "capping" of the hydrophobes occurs for HASE polymers with $C_{l2}$, $C_{16}$ and $C_{20}$ hydrophobes as reflected by the large reduction in the viscosity. However, the steady shear viscosity remains constant when the concentration of $\beta$-CD exceeds 1 wt%, suggesting that $\beta$-CD is not able to fully encapsulate the hydrophobes of the HASE polymer. The temperature variation plots indicate that the activation energy of the HASE-EO10-$C_{20}$ system and $\beta$-CD is dependent on the magnitude of the applied shear stress. These results further reinforce the hypothesis that $\beta$-CD is not able to completely remove all the hydrophobic associations.phobic associations.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.19-23
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• 2007

The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.213-213
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• 2011

Gold catalysts supported on TiO2 have shown a unique catalytic behavior on CO oxidation, depending on surface effects. Particle size has an influence on the surface activity. To make monodisperse Au nanoparticles, organic capping ligands, such as alkylthiols, were used by a "greener" synthesis method [1,2] and Au nanoparticles were deposited on TiO2. However, organic capping ligands must be removed for high catalytic activities by the Au nanoparticles without changing the Au size [3]. We used UV ozone treatment to decompose thiol ligands. The samples have been characterized by X-ray photoelectron spectroscopy to examine the surface modification by UV ozone treatment. We show the size distribution of the gold nanoparticles by light scattering analysis and transmission electron microscopy. Au/TiO2 have been prepared using the wetness impregnation method. The catalytic performance of CO oxidation over Au supported on TiO2 under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) were tested. The results show that the catalytic activity depends on particle size and the time of UV ozone exposure, which suggests the role of sulfur bonding in determining the catalytic activity of Au/TiO2 catalysts.

• Korean Chemical Engineering Research
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• v.49 no.4
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• pp.411-416
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• 2011

NCO terminated polyurethane prepolymers were synthesized from isophorone diisocyanate(IPDI), polycarbonate diol(PCD) and dimethylol propionic acid(DMPA). Subsequently, acrylic terminated prepolymers were prepared by capping the NCO groups of polyurethane prepolymers with different moles of pentaerythritol triacrylate (0~0.024 moles) as a acrylate monomer. The average particle size of the acrylic terminated polyurethane solutions was increased with increasing PETA contents. Also, the prepared coating films showed better abrasion resistance and pencil hardness than pure waterborne polyurethane.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.169-169
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• 1999

We studied magnetic properties of co thin films deposited on Pd (111) surface, which attracted much attention recently due to the perpendicular magnetic anisotropy, using magnetic circular dichroism(MCD). Special attention was paid on the effect of Pd capping and interface roughness on the direction of magnetic easy axis, and for that purpose MCD signals for all Co thicknesses were measured with two different ways : in-plane and out-of-plane geometry. In case of bare Co films deposited on smooth Pd(111) surface, no MCD signal was observed under 4$\AA$ co thickness. At 4$\AA$ Co thickness, MCD signal at the out-of-plane geometry was observed, and for thicker Co films, only in-plane MCD signal was measured. This type of magnetic easy axis transition has been reported for other cases like Co/Pt system. The effect of 5$\AA$ Pd capping on these bare Co films made an remarkable change on the transition of magnetic easy axis. Out-of-plane MCD signals exists up to 20$\AA$ Co thickness, and disappears at 24$\AA$ Co thickness. In-plane MCD signals first appears at 10$\AA$ Co thickness and gradually increases up to 24$\AA$ Co thickness. Between 10$\AA$ and 20$\AA$ Co thickness, in-plane and out-of-plane MCD signal coexist. The formation of multi-domain structure or the existence of tilted magnetic easy axis is an possible scenario for such an interesting coexistence. The effect of interface roughness was also tested by measuring MCD signal on Co films deposited on un-annealed Pd(111) surface. Out-of-plane MCD signal was observed up to 8$\AA$ Co thickness and the anisotropy of MCD signal at 4$\AA$ Co thickness was very large with respect to that of Co film deposited on the smooth substrate. Above 8$\AA$ thickness, there exists only in-plane MCD signal. From above results, it was concluded that both Pd capping and interface roughness induce and reenforce the perpendicular magnetic anisotropy. The large perpendicular magnetic anisotropy of Co/Pd multilayer system made by sputtering method can be well understood from our results.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• Journal of Information Display
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• v.10 no.3
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• pp.117-120
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• 2009

A new crystallization method for amorphous silicon, called selective area heating (SAH), was proposed. The purpose of SAH is to improve the reliability of amorphous silicon films with extremely low thermal budgets to the glass substrate. The crystallization time shortened from that of the conventional solid-phase crystallization method. An isolated thin heater for SAH was fabricated on a quartz substrate with a Pt layer. To investigate the crystalline properties, Raman scattering spectra were used. The crystalline transverse optic phonon peak was at about 519 $cm^{-1}$, which shows that the films were crystallized. The effect of the crystallization time on the varying thickness of the $SiO_2$ films was investigated. The crystallization area in the 400nm-thick $SiO_2$ film was larger than those of the $SiO_2$ films with other thicknesses after SAH at 16 W for 2 min. The results show that a $SiO_2$ capping layer acts as storage layer for thermal energy. SAH is thus suggested as a new crystallization method for large-area electronic device applications.