• 한국전기전자재료학회논문지
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• 제25권8호
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• pp.580-583
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• 2012

The dependency of processing pressure on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were deposited by using radio frequency (RF) magnetron sputtering method with different partial pressure. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing pressure during deposition processing. As a result, oxygen vacancies generated in SZTO channel layer with increasing partial pressure resulted in negative shift in $V_{th}$ and increase in on-current.

• 센서학회지
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• 제2권1호
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• pp.95-99
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• 1993

영상 센서를 위한 비정질 실리콘 박막트랜지스터 (a-Si : HTFT)를 제작하고 그 동작 특성 을 조사하였다. 게이트 절연막으로는 비정질 실리콘 질화막(a-SiN : H)을 증착하였으며 소오스와 드레인 영역에서의 저항성 접합을 위해 $n^{+}$ 형 비정질 실리콘($n^{+}$-a-Si : H)을 증착하였다. 이 때 a-SiN : H막과 a-Si : H막의 두께는 각각 $2000{\AA}$, $n^{+}$-a-Si : H막의 두께는 $500{\AA}$이었다. 또한 a-Si : H TFT의 채널길이와 채널폭은 각각 $50{\mu}m$와 $1000{\mu}m$였다. 본 연구에서 제작한 a-Si : H TFT의 ON/OFF 전류비는 $10^{5}$, 문턱전압은 6.3 V 그리고 전계효과 이동도는 $0.15cm^{2}/V{\cdot}s$로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• 한국의학물리학회지:의학물리
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• 제6권1호
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• pp.65-77
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• 1995

A new gamma camera using a-Si : H photodetectors has been designed for the imaging of heart and other small organs. In this new design the photomultiplier tubes and the position sensing circuitry are replaced by 2-D array of a-Si : H p-i-n pixel photode tectors and readout circuitry which are built on a substrate. Without the photomultiplier tubes this camera is light weight, hence can be made portable. To predict the characteristics and the performance of this new gamma camera we did Monte Carlo simulations. In the simulations 128${\times}$128 imaging array of various pixel sixes were used. $\^$99m/Tc(140keV)and $\^$201/Tl(70keV) were used as radiation sources. From the simulations we could obtain the resolution of the camera and ther overall system, and the blurring effects due to scattering in the phantom. Using the Wiener filter for image processing, restoration of the blurred image could be achieved. Simulation results of a-Si : H based gamma camera were compared with those of a conwentional gamma camera.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.264-268
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• 2005

A 2.2-inch QCIF+(176${\times}$RGB${\times}$220) TFT-LCD with integrated row driver was developed using a standard amorphous silicon TFT technology. At low temperature, the integrated row driver operation is dramatically effected by the electron drift mobility reduction(■50 %) and the threshold voltage shift (■1V) of the a-Si TFT. We studied the dependency of circuit design and found that higher on-current circuit is important to guarantee good operation in wide temperature range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.559-562
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• 2004

A 2.2-inch QCIF+ $(176{\times}RGB{\times}220)$ TFT-LCD with integrated row driver was developed using a standard amorphous silicon TFT technology. At low temperature $({\sim}-20^{\circ}C)$, the integrated row driver operation is dramatically effected by the electron drift mobility variation $({\sim}50%)$ and the threshold voltage shift $({\sim}1V)$ of the a-Si TFT. We studied the temperature dependency of the circuit design and found that higher on-current circuit is important to guarantee good operation in wide temperature range.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1649-1652
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• 2006

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (${\alpha}$- Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated because the 2.5 um fine pattern formation technique is combined with high thermal photo-resist (PR) development. In addition, a novel concept of unique ${\alpha}$-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um finepatterning is a considerably significant technology to obtain higher aperture ratio for higher resolution ${\alpha}$-Si TFT-LCD panel realization.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.58.2-58.2
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• 2010

본 연구에서는 n-type wafer에 비정질 실리콘을 증착한 이종접합 태양전지를 열처리 방법을 이용하여 열처리의 효과를 분석함으로써 이종접합 태양전지에 효율적인 열처리 효과에 대하여 연구하였다. P, N-layer는 PECVD(Plasma-enhanced chemical vapor deposition) I-layer는 HWCVD(Hot wire chemical vapor deposition), ITO는 RF 마그네트론 스퍼터링법으로 동일한 조건에서 제작하였고 rapid thermal process를 이용하여 진공 중에서 $150^{\circ}C$, $200^{\circ}C$, $220^{\circ}C$, $250^{\circ}C$까지 열처리를 하였다. 열처리 전과 후 QSSPC로 minority carrier life time, 자외 가시선 분광분석 장치로 투과 반사도를, Ellipsometer로 흡수 계수 등의 변화를 조사하였다. 열처리 후 Minority carrier life time, Voc 및 광변환 효율이 증가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.137-141
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• 1993

We studied the fabrication and electrical characteristics of high voltage hydrogenerated amorphous silicon thin film transistor using glow discharge plasma enchanced chemical vapor deposition (GDPECVD) with $2500{\AA}\;SiO_2$, $400-1500{\AA}$ a-Si thickness, 350V output voltage, 100V input voltaege, and $9.55{\times}10^4$ average on/off ratio. We found that leakage current of high voltage TFT occured 0-70V drain voltage.