• Korean Journal of Metals and Materials
• /
• v.48 no.1
• /
• pp.1-7
• /
• 2010

Experiments have demonstrated that the addition of a moderate amount of V to $Fe_{52}Co_{(20-x)}B_{20}Si_4Nb_4V_x$ amorphous alloy enhances the plasticity of the alloy. In particular, $Fe_{52}Co_{17.5}B_{20}Si_4Nb_4V_{2.5}$ alloy withstood a maximum of 8.3% strain prior to fracture along with a strength exceeding 4.7 GPa. Energy dispersive x-ray spectroscopy conducted on the $Fe_{52}Co_{17.5}B_{20}Si_4Nb_4V_{2.5}$ alloy exhibited evidence of compositional modulation, indicating that nm-scale phase separation had occurred at local regions. In this study, the role played by nm-scale phase separation on the plasticity was investigated in terms of structural disordering and shear localization in order to better understand the structural origin of the enhanced plasticity shown by the developed alloy.

• Journal of Magnetics
• /
• v.16 no.3
• /
• pp.318-321
• /
• 2011

A new Fe-based amorphous compound powder was prepared from Fe-Si-B amorphous powder by crushing amorphous ribbons as the first magnetic component and Fe-Cr-Mo metallic glassy powder by water atomization as the second magnetic component. Subsequently by adding organic and inorganic binders to the compound powder and cold pressing, the new Fe-based amorphous compound powder cores were fabricated. This new Fe-based amorphous compound powder cores combine the superior DC-Bias properties and the excellent core loss. The core loss of 500 kW/$m^3$ at $B_m$ = 0.1T and f = 100 kHz was obtained When the mass ratio of FeSiB/FeCrMo equals 3:2, and meanwhile the DC-bias properties of the new Fe-based amorphous compound powder cores just decreased by 10% compared with that of the FeSiB powder cores. In addition, with the increasing of the content of the FeCrMo metallic glassy powder, the core loss tends to decrease.

• Korean Journal of Materials Research
• /
• v.12 no.2
• /
• pp.140-145
• /
• 2002

This study was conducted to investigate the brazing characteristics between Zircaloy-4 nuclear fuel cladding tubes and bearing pads with filler metals of amorphous $Zr_{1-x}Be_x$(0.3$\leq$x$\leq$0.5) binary alloy, in which they were produced in the ribbon form by the melt-spinning metod. The crystallization behavior, stability, hardness and micro-structure of brazed zone were examined by X-ray diffraction, differential scanning calorimetry, micro-Vickers hardness test, optical microscopy, and transmission electron microscopy. $Zr_{1-x}Be_x$(0.3$\leq$x$\leq$0.4) amorphous alloys were crystallized to $\alpha$-Zr with increasing the temperature, and the rest were transformed to ZrBe$_2$at higher temperatures. On the other hand, $Zr_{1-x}Be_x$(0.4$\leq$x$\leq$0.5) amorphous alloys were crystallized to $\alpha$-Zr and ZrBe$_2$, simultaneously. The thickness of the layer brazed with amorphous alloy was increased with increasing the beryllium content due to the higher diffusion of Be. The morphology of brazed layer with PVD Be filler metal showed dendrite while that brazed with amorphous alloys appeared globular. Micro-Vickers hardness of brazed zone increased as the beryllium content of filler metal was decreased.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.08a
• /
• pp.82.4-82
• /
• 1998

• Journal of information and communication convergence engineering
• /
• v.9 no.5
• /
• pp.587-590
• /
• 2011

The absence of deep traps for electrons in the spectrum of $As_{40}Se_{30}S_30$ localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous $As_{40}Se_{30}S_30$ films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2009.10a
• /
• pp.454-454
• /
• 2009

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2006.05a
• /
• pp.16.1-16.1
• /
• 2006

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2006.05a
• /
• pp.22.1-22.1
• /
• 2006

• Korean Journal of Materials Research
• /
• v.4 no.4
• /
• pp.416-427
• /
• 1994

The changes of crystallinity and microstructure and the $Si_{1-x}Ge_x/Sio_2$ interfaces of $Si_{1-x}Ge_x$ alloys deposited on amorphous $SiO_{2}$ were studied as a function of deposition temperature. The crystallinity, microstructure, and compositional uniformity of $Si_{1-x}Ge_x$ alloys deposited on the SiOl at different temperature were investigated by X-ray diffraction and transmission electron microscopy. And $Si_{1-x}Ge_x/Sio_2$ interface were investigated by high-resolution transmission electron microscopy. The $Si_{0.7}Ge_{0.3}/Sio_2$ films were deposited on amorphous $SiO_{2}$ at $300^{\circ}C,400^{\circ}C,500^{\circ}C,600^{\circ}C,$ and $700^{\circ}C$ by Si-MBE. In the film deposited at $300^{\circ}C$, only amorphous phase were observed. In the film deposited at $400^{\circ}C$, both amorphous and polycrystalline films were observed. Both phases were deposited simultaneously, but, at initial film growth, amorphous phase prevailed over polycrystalline phase. As the film thickness increased, the fraction of polycrystalline phase increased. At $500^{\circ}C$, thin amorphous layer was observed at lOnm from $SiO_{2}$ surface. In the films deposited at higher than $600^{\circ}C$, only crystalline phase were observed. Polycrystalline films had columnar structure. Compositional uniformity for deposited films were good regardless of deposition temperature. The interfaces of $Si_{1-x}Ge_x/Sio_2$ were flat, whatever polycrystal or amorphous was deposited on $SiO_{2}$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1308-1311
• /
• 2007

Leakage current produced by backside illumination on bottom-gated amorphous silicon thin film transistor has been investigated. The experimental results show that the leakage current of bottomgated structure is significantly dependent on the shape of amorphous silicon pattern. A proper design of amorphous silicon pattern has been suggested in viewpoint of reducing the leakage current as well as mass production.