• Journal of Adhesion and Interface
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• v.14 no.2
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• pp.82-87
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• 2013

Preliminary studies on the synthesis of magnetic nanoparticles including nanoporous carbon materials have been done via a direct carbonization process from resol, ferric nitrate and triblock copolymer F127. The results show that the nanoporous magnetite/carbon ($Fe_3O_4$/carbon) with a low $Fe_3O_4$ content (1 wt%) possesses an ordered 2-D hexagonal (p6mm) structure, uniform nanopores (3.6 nm), high surface areas (up to 635 $m^2/g$) and pore volumes (up to 0.48 $cm^3/g$). Magnetite nanoparticles with a small particle size (10.2 nm) were confined in the matrix of amorphous carbon frameworks with superparamagnetic property (7.7 emu/g). The nanoporous magnetite/carbon showed maximum adsorption amount (995 mg/g) of ibuprofen after 24 h at room temperature. The nanoporous magnetite/carbon was separated from solution easily by using a magnet. The nanoporous magnetite/carbon material is a good adsorbent for hydrophobic organic drug molecules, i.e. ibuprofen.

• Korean Journal of Food Science and Technology
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• v.34 no.6
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• pp.1140-1144
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• 2002

Molecular relaxation behaviors of crystalline glucose anhydrous, crystalline glucose monohydrate, and amorphous glucose with different particle sizes were observed by measuring spin-spin relaxation time constant $(T_2)$ at the temperature range of $-20\;to\;110^{\circ}C$ using temperature-controlled low field nuclear magnetic resonance spectroscopy. No change in $T_2$ values of crystalline glucose anhydrous was observed throughout the temperature range, whereas $T_2$ values of crystalline glucose monohydrate and amorphous glucose increased from around $45\;and\;65^{\circ}C$, respectively. These results indicate that molecular mobility of crystalline glucose anhydrous does not change even at temperature higher than $100^{\circ}C$ and that the stability of powdered glucose could be improved by increasing the particle size of materials.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.789-794
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• 2002

In this study, nano-sized Si-C-N precursor powders were synthesized by Chemical Vapor Condensation Method(CVC) using TMS(Tetramethylsilane: $Si(CH_3)_4$), $NH_3$ and $H_2$ gases under the various reaction conditions of the reaction temperature, TMS/$NH_3$ ratio and TMS/$H_2$ ratio. XRD and FESEM were used to analysis the crystalline phase and the average particle size of the synthesized powders. It was found that the obtained powders under the considering conditions were all spherical amorphous powder with the particle size of 87∼130 nm. The particle size was decreased as the reaction temperature increased and TMS/$NH_3$ and TMS/$H_2$ ratio decreased. As the results of EA analysis, it was found that the synthesized powders had been formed the powders composed of Si, N, C and H. Through FT-IR results, it was found that the synthesized powders were Si-C-N precursor powders with Si-C, Si-N and C-N bonds.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.188.1-188.1
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• 2015

For present investigation Fe/MgO/Fe/Co multilayer stack is grown on Si substrate using e-beam evaporation in ultrahigh vacuum. This stack is irradiated perpendicularly by 120 MeV $Ag^{8+}$ at different fluences ranging from $1{\times}10^{11}$ to $1{\times}10^{13}ions/cm^2$ in high vacuum using 15UD Pelletron Accelerator at Inter University Accelerator Centre, New Delhi. Magnetic measurements carried out on pre and post irradiated stacks show significant changes in the shape of perpendicular hysteresis which is relevant with previous observation of re-orientation of magnetic moment along the direction of ion trajectory. However increase in plane squareness may be due to the modification of interface structure of stacks. X-ray reflectivity measurements show onset of interface roughness and interface mixing. X-ray diffraction measurements carried out using synchrotron radiation shows amorphous nature of MgO and Co layer in the stack. Peak corresponding body centered Fe [JCPDS-06-0696] is observed in X-ray diffraction pattern of pre and post irradiated stacks. Peak broadening shows granular nature of Fe layer. Estimated crystallite size is $22{\pm}1nm$ for pre-irradiated stack. Crystallite size first increases with irradiation then decreases. Structural quality of these stacks was further studied using transmission electron microscopic measurements. Thickness from these measurements are 54, 36, 23, 58 and 3 nm respectively for MgO, Fe, MgO, Fe+Co and Au layers in the stack. These measurements envisage poor crystallinity of different layers. Interfaces are not clear which indicate mixing at interface. With increase fluence mixing and diffusion was increased in the stack. X-ray absorption spectroscopic measurements carried out on these stacks show changes of Fe valence state after irradiation along with change of O(2p)-metal (3d) hybridized state. Valence state change predicts oxide formation at interface which causes enhanced in-plane magnetization.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.123-132
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• 2000

Cerium substituted YIG thin films were grown by rf magnetron sputter techniques. We investigated the effects of post-deposition heat-treatment as well as various deposition parameters such as substrate materials, substrate temperature. sputter power, and sputter gas types on the crystallinity, chemical composition, microstructure and magnetic characteristics of the films. Post-deposition heat treatment over 750 $\^{C}$ was applied to crystallize as-prepared amorphous films, and a strong tendency of particular crystallographic planes tying parallel to substrate surface was observed for the post-deposition heat-treated films on GGG substrate. The chemical composition of the films exhibited a wide range of chemical stoichiometry depending on the oxygen fraction of sputter gas, and in particular the composition of the film deposited in sputter gas with an oxygen fraction of R = 10% was Ce$\_$0.23/Y$\_$1.30/Fe$\_$3.50/O$\_$12/. With raising the temperature of post-deposition heat-treatment from 900 $\^{C}$ to 1100 $\^{C}$, the surface roughness of the film on GGG substrates increased from about 3 nm to 40 nm, but their coercive force and ferromagnetic resonance line width decreased from 0.477 kA/m to 0.369 kA/m and from 12.5 kA/m to 8.36 kA/m, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.292-296
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• 2000

Mechenochemical reaction by planetary type ball mill is applied to prepare $Sm_2$$Fe_{17}$$N_{x}$ permanent magnet powders. Starting from pure samarium and iron powders, the formation process of hard magnetic $Sm_2$$Fe_{17}$$N_{x}$ phase by ball milling and a subsequent solid state reaction were studied. At as-milled stage powders were found to consist of amorphous Sm-Fe and $\alpha$-Fe phases in all composition of $Sm_2$$Fe_{100-x}$(x = 11, 13, 15). The dependence of starting composition of elemental powder on the formation of Sm-Fe intermetallic compound was investigated by heat treatment of as-milled powders. When Sm concentration was 15 at%, heat-treated powder consists of mostly $Sm_2$$Fe_{17}$$N_{x}$single phase. For synthesizing of hard magnetic $Sm_2$$Fe_{17}$$N_{x}$ compound, additional nitriding treatment was carried out under $N_2$gas atmosphere at $450^{\circ}C$. The increase in the coercivity and remanence was parallel to the nitrogen content which increased drastically at first and then gradually as the nitriding time was extended. The ball-milled Sm-Fe-N powders were expected to be prospective materials for synthesizing of permanent magnet with high performance.

• Progress in Superconductivity and Cryogenics
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• v.21 no.1
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• pp.18-24
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• 2019

This study was carried out to investigate the effect of milling of boron (B), which is one of raw materials of $MgB_2$, on the critical current density ($J_c$) of $MgB_2$. B powder used in this study is semi-amorphous B (Pavezyum, Turkey, 97% purity, 1 micron). The size of B powder was reduced by planetary milling using $ZrO_2$ balls (a diameter of 2 mm). The B powder and balls with a ratio of 1:20 were charged in a ceramic jar and then the jar was filled with toluene. The milling time was varied from 0 to 8 h. The milled B powders were mixed with Mg powder in the composition of (Mg+2B), and the powder mixtures were uniaxially pressed at 3 tons. The powder compacts were heat-treated at $700^{\circ}C$ for 1 h in flowing argon gas. Powder X-ray diffraction and FWHM (Full width at half maximum) were used to analyze the phase formation and crystallinity of $MgB_2$. The superconducting transition temperature ($T_c$) and $J_c$ of $MgB_2$ were measured using a magnetic property measurement system (MPMS). It was found that $B_2O_3$ was formed by B milling and the subsequent drying process, and the volume fraction of $B_2O_3$ increased as milling time increased. The $T_c$ of $MgB_2$ decreased with increasing milling time, which was explained in terms of the decreased volume fraction of $MgB_2$, the line broadening of $MgB_2$ peaks and the formation of $B_2O_3$. The $J_c$ at 5 K increased with increasing milling time. The $J_c$ increase is more remarkable at the magnetic field higher than 3 T. The $J_c$ at 5 K and 4 T was the highest as $4.37{\times}10^4A/cm^2$ when milling time was 2 h. The $J_c$ at 20 K also increased with increasing milling time. However, The $J_c$ of the samples with the prolonged milling for 6 and 8 h were lower than that of the non-milled sample.

• Korean Journal of Optics and Photonics
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• v.34 no.6
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• pp.241-247
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• 2023

We examine the spectral characteristics of laser-induced periodic surface structures (LIPSSs) formed on an amorphous silicon film irradiated by a 355-nm nanosecond laser. A Gaussian beam with a diameter of 196 ㎛ is used to perform a two-dimensional raster scan. The laser's pulse number is varied from 190 to 280, and its intensity is adjusted within 100-130 mJ/cm². LIPSSs with a periodicity of approximately 330 nm form on the surface of the Si film, aligned perpendicular to the laser's polarization. Transmission spectra of the samples show dips around 700 nm for transverse electric polarization and around 500 nm for transverse magnetic polarization. The features are investigated with a one-dimensional-grating model using a rigorous coupled-wave analysis. Simulations confirm that the observed dips are due to the resonant modes, depending on the polarization.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.