• Journal of the Korea Safety Management & Science
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• v.2 no.1
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• pp.89-97
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• 2000

This paper shows the study for development inprocess measuring magnetic sensor for tolerance control, First, we fabricated and annealed sample amorphous ribbons which were made of ($CO_{0.94}$$Fe_{0.06}$)$_{79}$$Si_{2}$$b_{19}$ having near zero magnetostrictive. It had 12［$\mu\textrm{m}$］ of thickness, 10［mm］ of length, and 2.5［mm］ of width. Then, we measured the magnetic characteristics such as frequency dependency over impedance variation rate and position change over impedance variation. As the results of the evaluation, we found that the sample ribbons had excellent sensor characteristics. Then, we made sensors by using the sample ribbons, As the results of the measurements, it proved that the ribbon could be used as excellent magnetic sensor for which it was possible to control inprocess measurement within the tolerance range(~$\mu\textrm{m}$ ).

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.703-709
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• 2006

We report on the synthesis of highly uniform, single phase zinc and cobalt thin films prepared by the Liquid Phase Deposition (LPD) method. X-Ray diffraction, TGA and EDX measurements support the assumption that the as deposited films are constituted by a mixture of crystallized FeOOH and amorphous M(OH)$_2$ (M=Co, Zn) which is converted upon heat treatment in air at 600?C into the corresponding zinc ferrites. The films with adjustable chemical compositions are identified with a crystal structure as spinel-type and present a spherical or rod-like microstructure, depending on the both the nature and concentration of the divalent transition metal ions. Zinc ferrite thin films present a superparamagnetic behavior above blocking temperatures which decrease with increasing the Zn content and are ferromagnetic at 5 K with coercivities ranging between 797.8 and 948.5 Oe, whereas the cobalt ferrite films are ferromagnetic at room temperature with magnetic characteristics strongly dependent on the chemical composition.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.163-169
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• 1995

Ion beam assisted deposition(IBAD) technique was used to synthesize hard coatings including diamond-like carbon(DLC), carbon nitride(CN) and metal-ceramic multilayered films. It was found that DLC films formed at low energy ion bombardment possess more $Sp^3$ bonds and much higher hardness. The films exhibited an excellent wear resistance. Nanometer multialyered Fe/TiC films was deposited by ion beam sputtering. The structure and properties were strongly dependent on the thickness of the individual layers and modulation wave length. It was disclosed that both hardness and toughness of the films could be enhanced by adjusting the deposition parameters. The CN films synthesized by IBAD method consisted of tiny crystallites dispersed in amorphous matrix, which were identified by electron diffraction pattern to be $\beta -C_3N_4$.

• Journal of the Korean institute of surface engineering
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• v.31 no.5
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• pp.245-250
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• 1998

There is clear pressing need to reduce bias field(Ha,) used on linear magenetomechanical resonator tag by at least a factor of two to allow low-bias operation near the frequency minimum since reducing Ha causes a dramatic increase in well depth, which implies increased stability. However, this makes it more difficult to maintain tight frequncy specs. It can be solved by a reduction of magnetomechanical coupling(k). We determined from an equivalent circuit model that optimal reduced, k, is near 0.3 Also, We determiend the material properties($lambda_s$, :saturated magenetostriction, $M_s$, and,$H_a$) that give k=0.3. From these evaluations, we suggested that on optimal comosition with adequate mathrial properties is $Fe_{55}Co_{15}Cr_6Nb_2B_{18}Si_4$.

• Bulletin of the Korean Chemical Society
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• v.19 no.1
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• pp.5-21
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• 1998

The purpose of this paper is to show that X-ray absorption spectroscopy (XANES and EXAFS) is a powerful technique for characterizing both crystalline and amorphous solids from structural (local order) and electronic point of view. The principle of this technique is briefly described by showing the main factors which must be considered for recording and fitting the experimental results. Some non-trivial examples have been selected for demonstrating that XAS spectroscopy is the only technique for bringing a definitive answer as for example: the determination of the local distortion of the $NiO_6$ octahedra in the $Li_{1-z}Ni_{1+z}O_2$ layered oxides and the evidence of the presence of copper pairs in the NASICON-type phosphate $CuZr_2 (PO_4)_3$. Are also reported some significant examples for which XAS spectroscopy is decisive with other characterization methods as (i) Raman spectroscopy for glasses (ii) Mossbauer spectroscopy for $LiNi_{1+z-t}Fe_To_2$ oxides (iii) magnetic measurements for Ce-based intermetallic compounds.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.26 no.1B
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• pp.107-111
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• 2006

The samples collected from two reactors are analyzed by X-ray diffraction and M$\ddot{o}$ssbauer spectroscopy in this study. It is concluded that the iron oxide crystal attached on anthracite media which possesses catalytic ability is identified to be Ferrihydrite, regardless of the value of pH from the analysis of the iron oxide. Iron oxide in Batch reactor is identified to be Microcrystalline goethite.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.4
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• pp.743-748
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• 2010

Boron nitride (BN) and carbon nitride (CN) films, which have relatively low work functions and commonly exhibit negative electron affinity behaviors, were coated on carbon nanotubes (CNTs) by magnetron sputtering. The CNTs were directly grown on metal-tip (tungsten, approximately 500nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The variations in the morphology and microstructure of CNTs due to coating of the BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM). The energy dispersive x-ray (EDX) spectroscopy and Raman spectroscopy were used to identify the existence of the coated layers (CN and BN) on CNTs. The electron-emission properties of the BN-coated and CN-coated CNT-emitters were characterized using a high-vacuum field emission measurement system, in terms of their maximum emission currents ($I_{max}$) at 1kV and turn-on voltage ($V_{on}$) for approaching $1{\mu}A$. The results showed that the $I_{max}$ current was significantly increased and the $V_{on}$ voltage were remarkably reduced by the coating of CN or BN films. The measured values of $I_{max}-V_{on}$ were as follows; $176{\mu}A$-500V for the 5nm CN-coated emitter and $289{\mu}A$-540V for the 2nm BN-coated emitter, respectively, while the $I_{max}-V_{on}$ of the as-grown (i.e., uncoated) emitter was $134{\mu}A$-620V. In addition, the CNT emitters coated with thin CN or BN films also showed much better long-term (up to 25h) stability behaviors in electron emission, as compared with the conventional CNT emitter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• Journal of Powder Materials
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• v.23 no.3
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• pp.240-246
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• 2016

In order to improve the high-temperature oxidation stability, sintered 434L stainless steel is studied, focusing on the effect of the addition of metallic oxides to form stable oxide films on the inner particle surface. The green compacts of Fecralloy powder or amorphous silica are added on STS434L and oxidized at $950^{\circ}C$ up to 210 h. The weight change ratio of 434L with amorphous silica is higher than that of 434L mixed with Fecralloy, and the weight increase follows a parabolic law, which implies that the oxide film grows according to oxide diffusion through the densely formed oxide film. In the case of 434L mixed with Fecralloy, the elements in the matrix diffuse through the grain boundaries and form $Al_2O_3$ and Fe-Cr oxides. Stable high temperature corrosion resistance and electrical resistivity are obtained for STS434L mixed with Fecralloy.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.323-323
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• 2013

High power light-emitting diodes (LEDs) are widely used in many device applications due to its ability to operate at high power and produce high luminance. However, releasing the heat accumulated in the device during operating time is a serious problem that needs to be resolved to ensure high optical efficiency. Ceramic or Aluminium base metal printed circuit boards are generally used as integral parts of communication and power devices due to its outstanding thermal dissipation capabilities as heat sink or heat spreader. We investigated the characterisation of electroless plating of Ni-B film according to plating bath temperature, ranging from $50^{\circ}C$ to $75^{\circ}C$ on Ag paste/anodised Al ($Al_2O_3$)/Al substrate to be used in metal PCB for high power LED packing systems. X-ray diffraction (XRD), Field-Emission Scanning Electron Microscopy (FE-SEM) and X-ray Photoelectron Spectroscopy (XPS) were used in the film analysis. By XRD result, the structure of the as deposited Ni-B film was amorphous irrespective of bath temperature. The activation energy of electroless Ni-B plating was 59.78 kJ/mol at the temperature region of $50{\sim}75^{\circ}C$. In addition, the Ni-B film grew selectively on the patterned Ag paste surface.