• Electrical & Electronic Materials
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• v.1 no.4
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• pp.319-332
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• 1988

높은 포화자속밀도와 낮은 철손을 갖는 Fe/aub 80/B$_{12}$Si$_{8}$ 비정질합금을 일반열처리, 자장열처리시켜 그의 자기적특성과 자구구조와의 관계를 조사하였다. 이를 위하여 Fe$_{80}$B$_{12}$Si$_{8}$ 비정질리본을 단롤법으로 제작하여 결정화온도를 측정하였으며 측정된 결정화온도 이하의 여러 온도에서 30분간 Ar-gas 분위기하에서 일반열처리, 자장열처리를 행하였다. 이와같이 하여 준비된 시료의 자기적특성을 조사하기 위하여 D.C., A.C. Recorking Fluxmeter를 이용하였으며 자구구조는 Bitter method로 관찰하였다. as-cast 상태의 시료를 일반열처리함에 따라 내부응력이 완화되면서 maze자구가 점차 사라지고 wave형태의 180.deg.자구가 관찰되었다. 동시에 자화과정에 있어서 자기이력곡선은 Barkhausen jump가 없어 smooth하였다. 그리고 자장열처리시에는 as-cast 상태나 일반열처리에 비해 자기적특성이 현저하게 향상되었으며 이는 열처리를 행함에 따라 내부응력이 완화되면서 maze 자구가 없어지고 일축자기 이방성으로 리본길이방향에 평행하게 형성된 180.deg.자구에 기인하는 것이라 사료된다. 그리고 자장열처리의 경우, 폭방향으로 열처리한 리본의 자구폭은 길이방향으로 열처리한 리본의 폭보다 미세하였으며 전자의 이력손실이 후자의 것보다 더 컸다.다.

• Korean Journal of Optics and Photonics
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• v.3 no.2
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• pp.105-110
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• 1992

In order to measure fine rotation angles by magneto-optic effects of magneto-optical recording thin films, a polarization modulation method is used. In the experiment, the polarization of laser (He-Ne laser) beam is modulated by a Faraday rotator and the amplified modulated signals are selectively detected by phase sensitive detector. The magnetic Kerr rotation and Faraday rotation hysteresis loops are investigated by this method for thermally evaporated amorphous TbFeCo thin films and RF sputtered garnet thin films. Rotation angles about $0.25^{\circ}$ are measured easily from TaFeCo thin films. In the case of longitudinal Kerr rotation, very small rotation angle of $2.5\times10^{-3^\circ}$ is measured with good accuracy of the measurement (about $1\times10^{-3^\circ}$). And it is found that each thin films have the hysteresis curves of high coercivity and good squareness.

• Corrosion Science and Technology
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• v.7 no.4
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• pp.201-207
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• 2008

$CO_2$ corrosion product scales formed on 13 Cr tubing steel in autoclave and in the simulated corrosion environment of oil field are investigated in the paper. The surface and cross-section profiles of the scales were observed by scanning electron microscopy (SEM), the chemical compositions of the scales were analyzed using energy dispersion analyzer of X-ray (EDAX), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) to confirm the corrosion mechanism of the 13 Cr steel in the simulated $CO_2$ corrosion environment. The results show that the corrosion scales are formed by the way of fashion corrosion, consist mainly of four elements, i.e. Fe, Cr, C and O, and with a double-layer structure, in which the surface layer is constituted of bulky and incompact crystals of $FeCO_3$, and the inner layer is composed of compact fine $FeCO_3$ crystals and amorphous $Cr(OH)_3$. Because of the characteristics of compactness and ionic permeating selectivity of the inner layer of the corrosion product scales, 13 Cr steel is more resistant in $CO_2$ corrosion environment.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.6
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• pp.799-803
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• 2018

We demonstrated memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomeric substrate. The dielectric constant for the P(VDF-TrFE) thin film prepared on the elastomeric substrate was calculated to be 10 at a high frequency of 1 MHz. The voltage-dependent capacitance variations showed typical butterfly-shaped hysteresis behaviors owing to the polarization reversal in the film. The carrier mobility and memory on/off ratio of the MTFTs showed $15cm^2V^{-1}s^{-1}$ and $10^6$, respectively. This result indicates that the P(VDF-TrFE) film prepared on the elastomeric substrate exhibits ferroelectric natures. The fabricated MTFTs exhibited sufficiently encouraging device characteristics even on the elastomeric substrate to realize mechanically stretchable nonvolatile memory devices.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.575-582
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• 2012

Medium carbon steel was aluminized by hot dipping into molten Al or Al-1 at% Si baths. After hot-dipping in these baths, a thin Al-rich topcoat and a thick alloy layer rich in $Al_5Fe_2$ formed on the surface. A small amount of FeAl and $Al_3Fe$ was incorporated in the alloy layer. Silicon from the Al-1 at% Si bath was uniformly distributed throughout the entire coating. The hot dipping increased the microhardness of the steel by about 8 times. Heating at $700-1000^{\circ}C$, however, decreased the microhardness through interdiffusion between the coating and the substrate. The oxidation at $700-1000^{\circ}C$ in air formed a thin protective ${\alpha}-Al_2O_3$ layer, which provided good oxidation resistance. Silicon was oxidized to amorphous silica, exhibiting a glassy oxide surface.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.795-799
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• 1995

The magnetostriction versus field (${\lambda}-H$) curves for the melt-spun ribbons of $Dy_{x}{(Fe_{1-y}B_{y})}_{1-x}$ (x=0.2, 0.25, 0.3; y=0, 0.05, 0.1, 0.15, 0.2) alloys are measured systematically at various wheel speeds ranging from 10 to 50 m/sec. The ${\lambda}-H$ curves in most cases vary sensitively with the wheel speed and, in the wheel speed range where no amorphous phase is formed, the magnetic softness improves rather continuously with the wheel speed. This result is considered to be due to the reduced grain size with increasing wheel speed, which was confirmed by X-ray diffraction and transmission electron microscopy. In particular, homogeneous and ultrafine grains with size of about 10 nm are formed even in the as-spun state when the $Dy_{0.3}{(Fe_{1-y}B_{y})}_{0.7}$ alloys are quenched at the wheel speed of 30 m/sec (for the alloy with y=0.2) or 40 m/sec (for the alloys with $y{\leq}0.15$) and the ribbons having the nanocrystalline grain structure exhibit good magnetostrictive characteristics.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.237-242
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• 1997

The microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced at $P_{O2}=10%$ by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, is investigated. Newly developed $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits good soft magnetic properties with $4{\pi}M_s=17.7$ kG, $H_c=0.7$ Oe and ${\mu}_{eff}$(0.5~100MHz)=2,500, respectively. The Fe-Hf-O films are composed of $\alpha$-Fe nanograins and amorphous phase with larger amounts of Hf and O elements which chemically combine each other. With increasing Hf area fraction, Hf and O contents increased proportionally. It was considered that O content in films was determined by Hf contents, because O was chemically combined with Hf. It results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity. The $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits the quality factor (Q=$\mu$'/$\mu$") of 25 at 20 MHz. These good frequency characteristics are considered to be superior to other films already reported.o other films already reported.

• Journal of Powder Materials
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• v.13 no.4 s.57
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• pp.256-262
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• 2006

The amorphous $Fe_{73}Si_{16}B_7Nb_3Cu_1$ alloy strip was pulverized to get a flake-shaped powder after annealing at $425^{\circ}C$ for 90 min and subsequently ground to obtain finer flake-shaped powder by using a ball mill. The powder was mixed with polyimide-based binder of $0.5{\sim}3wt%$, and then the mixture was cold compacted to make a toroidal powder core. After crystallization treatment for 1 hour at $380{\sim}600^{\circ}C$, the powder was transformed from amorphous to nanocrystalline with the grain size of $10{\sim}15nm$. Soft magnetic characteristics of the powder core was optimized at $550{\sim}600^{\circ}C$ with the insulating binder of 3wt%. As a result, the powder core showed the outstanding magnetic properties in terms of core loss and permeability, which were originated from the optimization of the grain size and distribution of the insulating binder.

• Journal of the Korean Magnetics Society
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• v.10 no.2
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• pp.49-52
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• 2000

The changes of magnetic properties in neutron irradiated F $e_{81}$ $B_{13.5}$S $i_{3.5}$ $C_2$ amorphous ribbon were studied by X-ray diffraction, hysteresis loop, temperature dependence of magnetization and complex permeability. The fluences of thermal ( $n_{th}$) and fast ( $n_{f}$) neutron were 6.95$\times$10$^{18}$ $n_{th}$ c $m^{-2}$ and 4.56$\times$10$^{16}$ $n_{f}$c $m^{-2}$ , respectively. The changes of XRD Profiles were not observable at the neutron irradiated sample. The complex permeability spectra showed that the permeability from domain wall motion decreased due to the increase of pinning force against domain motion by the neutron irradiation, and the relaxation frequency of rotational magnetization moved to higher frequency region. The measurement of hysteresis loop showed the increase of magnetic softness, related to rotational magnetization, but saturation magnetization was decreased in neutron irradiation sample. The Curie temperature was decreased in the neutron irradiated sample.e.e.e.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.55-57
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• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.