• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.37-40
• /
• 2003

Amorphous $Al_2O_3$ nanotubes have been fabricated by utilizing the ZnO nanowires as template with wet etching method. ZnO nanowires synthesized by thermal evaporation are conformally coated with $Al_2O_3$ by atomic-layer deposition(ALD) method. The $Al_2O_3$-coated ZnO nanowires are of core-shell structure; ZnO core nanowires and $Al_2O_3$ shells. When the $ZnO/Al_2O_3$ core-shell structure is dipped in $H_3PO_4$ solution at $25^{\circ}C$ for a 6 min, the core ZnO materials are completely etched, and only $Al_2O_3$ nanotubes are remained. This nanotube fabrication is technically easier than others, and simply approachable. Transmission electron microscopy shows that the $Al_2O_3$ nanotubes have various thicknesses that can be controlled.

• 한국세라믹학회지
• /
• 제39권7호
• /
• pp.617-621
• /
• 2002

Calcium aluminosulfate (3CaO.3Al$_2$O$_3$.CaSO$_4$or $C_4$A$_3$S) was prepared by chemical synthesis from the nitrate salts and aluminum sulfate. $C_4$A$_3$S was the main phase after calcination at 110$0^{\circ}C$. The specific surface areas after calcination at 110$0^{\circ}C$ and 130$0^{\circ}C$ were about 2.5 and 1.0 $m^2$/g, respectively. Hydration was investigated by XRD, DSC, SEM, EDS, conduction calorimetry and analysis of the liquid phase. Calorimetry showed that the induction period was longer than that of a sample prepared by conventional solid state sintering and this was attributed to the formation of amorphous coatings in abundance of $Al_2$O$_3$ and SO$_3$. Crystalline hydration products, principally calcium monosulfoaluminate hydrate and Al(OH)$_3$, appeared subsequently.

• 한국결정성장학회지
• /
• 제9권1호
• /
• pp.113-118
• /
• 1999

$AlCl_3{\cdot}6H_2O$를 출발원료로 침전법에 의해 알루미늄 수화물을 합성하였다. 용액의 pH에 따라 amorphous, boehimite, bayerite, nordstrandite 상을 얻었고, 수산화 알루미늄은 열처리 온도가 증가함에 따라 $\gamma$, $\delta$, $\theta$를 거쳐${\alpha}-Al_2O_3$로 전이되었으며, 입자크기도 증가하였다. ${\gamma}-Al_2O_3$ 를 담금피막법(dip-coating method)으로 중간층 위에 코팅하였고, 비교를 위해 비지지체 분리막도 준비하였다. 지지체 분리막은 작은 입자(grain)들로 구성된 다공질 구조(porous structure)를 나타내었지만, 비지지체 분리막에서는 상호 연결된 큰 입자(grain)들이 나타났다. 지지체 분리막에서 보다 비지지체 분리막에서 결정립 성장이 명백하게 나타났다.

• 한국재료학회지
• /
• 제30권7호
• /
• pp.359-368
• /
• 2020

This study is aimed at improving the plasma resistance of Al₂O₃ ceramics on which plasma resistant YAS(Y₂O₃-Al₂O₃-SiO₂) frit is melt-coated using a simple heat-treatment process. For this purpose, the results of phase analysis and microstructural observations of the prepared YAS frits and the coating layers on the Al₂O₃ ceramics according to the batch compositions are compared and discussed with regard to the results of plasma resistance test. The prepared YAS frits consist of crystalline or amorphous or co-existing crystalline and amorphous phases according to the batch compositions, depending on the role and content of each raw material. The prepared YAS frit is melt-coated on the densely sintered Al₂O₃ ceramics, resulting in a dense coating layer with a thickness of at least ~ 80 ㎛. The YAS coating layer consists of crystalline YAG(Y₃Al₅O₁₂), Y₂Si₂O₇, and Al₂O₃ phases, and YAS glass phase. Plasma resistance of YAS coated Al₂O₃ ceramics is strongly dependent on the content of the YAG(Y₃Al₅O₁₂) and Y₂Si₂O₇ crystalline phases in the coating layer, especially on the content of the YAG phase. Comparing the weight loss of YAS coating ceramics with values obtained for commercial Y₂O₃, Al₂O₃, and quartz ceramics, the plasma resistance of the YAS coating ceramics is 6 times higher than that of quartz, 2 times higher than that of Al₂O₃, and 50 % of the resistance of Y₂O₃.

• Applied Microscopy
• /
• 제43권4호
• /
• pp.173-176
• /
• 2013

The oxidation behavior of the crystallized $Al_{87}Ni_3Y_{10}$ alloy has been investigated with an aim to compare with that of the amorphous $Al_{87}Ni_3Y_{10}$ alloy. The oxidation at 873 K occurs as follows: (1) growth of an amorphous aluminum-yttrium oxide layer (~10 nm) after heating up to 873 K; and (2) formation of $YAlO_3$ crystalline oxide (~220 nm) after annealing for 30 hours at 873 K. Such an overall oxidation step indicates that the oxidation behavior in the crystallized $Al_{87}Ni_3Y_{10}$ alloy occurs in the same way as in the amorphous $Al_{87}Ni_3Y_{10}$ alloy. The simultaneous presence of aluminum and yttrium in the oxide layer significantly enhances the thermal stability of the amorphous structure in the oxide phase. Since the structure of aluminum-yttrium oxide is dense due to the large difference in ionic radius between aluminum and yttrium ions, the diffusion of oxygen ion through the amorphous oxide layer is limited thus stabilizing the amorphous structure of the oxide phase.

• 한국광물학회지
• /
• 제25권4호
• /
• pp.283-293
• /
• 2012

지구가 마그마 바다 상태에서 현재의 층상화된 내부 구조로 분화되는 진화과정의 체계적인 이해를 위하여 규산염 용융체와 같은 비정질 산화물의 결정화과정 메커니즘 규명이 필요하다. 이를 위하여 결정화 과정에서 수반하는 용융체의 원자구조 변화를 실험적으로 측정하여 결정화 과정을 정량적으로 정립할 수 있다. 본 연구에서는 고상 핵자기 공명 분광분석(NMR)을 이용하여 졸겔법으로 합성한 비정질 알루미나($Al_2O_3$)의 온도-가열 시간 변화에 따른 원자구조 변화로부터, 비정질-결정질 상전이 과정을 원자 단위에서 규명하였다. 비정질 $Al_2O_3$의 $^{27}Al$ 3QMAS NMR 실험 결과 다량의 배위수 4, 5의 알루미늄($^{[4,5]}Al$)과 소량의 배위수 6인 알루미늄($^{[6]}Al$)이 명확히 구분되어 관찰되었고, 973 K와 1,073 K에서 각각 가열시간을 증가시킬수록 배위수 5인 알루미늄($^{[5]}Al$)이 감소하였다. 본 연구에서는 $^{[5]}Al$의 분율을 결정화의 지표로 이용하여 $^{27}Al$ 3QMAS NMR 결과를 정량 분석하였다. 분석을 통해 점진적인 원자구조의 변화로 관찰되는 비정질 산화물의 상전이 과정이 결정화 혹은 비정질 내 구조적 무질서도의 변화와 같은 복합적인 단계로 구성될 수 있음을 확인하였다. 이러한 연구 결과는 다양한 자연계의 다성분계 규산염 용융체 결정화 과정 및 마그마 바다의 분화와 지구의 화학적 진화에 대한 원자 단위의 이해증진에 도움을 줄 것이다.

• 한국세라믹학회지
• /
• 제27권4호
• /
• pp.501-512
• /
• 1990

Al2O3 and 0.25wt% MgO-doped Al2O3 powders were made from the alcohol solution of Al(NO3)3.9H2O and Mg(NO3)2.6H2O by spray pyrolysis method. Each powder was prepared at 900 and 100$0^{\circ}C$. Powders prepared at 90$0^{\circ}C$ were amorphous phase, but prepared at 100$0^{\circ}C$ wre mainly ${\gamma}$-Al2O3 crystalline form. Particle size of the MgO-doped Al2O3 powders was in the range of 0.2-2${\mu}{\textrm}{m}$, but undooped powders shwoed comparatively wider range of particle size. All the powders prepared at 900 and 100$0^{\circ}C$ were transformed to $\alpha$-Al2O3 crystalline form by calcination at 110$0^{\circ}C$ for 1hr. Each powder was sintered at 1600, 1650 and 1$700^{\circ}C$ for 2hrs. MgO-doped Al2O3 body sintering at 1$650^{\circ}C$ showed 99% of relative density but undooped Al2O3 showed 95% of relative density, even sintered at higher temperature of 1$700^{\circ}C$.

• 한국세라믹학회지
• /
• 제20권1호
• /
• pp.3-12
• /
• 1983

In the present study an attempt was made to synthesize the $Al_2O_3$.$2SiO_2$ glass in which atomic ratio is Al:Si=1:1 by sol-gel process. And at such a low temperature as 55$0^{\circ}C$ clear amorphous gel derived glass with Si-O-Al bonding was obtained. $Si(OC_2H_5)_4$ and $Al(NO_3)_3$.$9H_2O$ were used as the precursor and among the mutual solvents only n-butanol gave good results for the synthesis of the gel derived glass. Partial hydrolysis of TEOS with one-fold mol of $H_2O$ prior to the reaction with aluminum nitrate gave the better results., Total oxide content to the total reactants by weight was affective to the results.

• 신재생에너지
• /
• 제2권3호
• /
• pp.31-36
• /
• 2006

Superstrate pin amorphous silicon thin-film(a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides(TCO) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage VOC than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer(${\mu}c-Si:H$) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{OC}$ of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{OC}$ of 994mV while keeping fill factor(72.7%) and short circuit current density $J_{SC}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{OC}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• 한국전기전자재료학회논문지
• /
• 제31권5호
• /
• pp.273-277
• /
• 2018

This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed $Al_2O_3$ diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed $Al_2O_3$ diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed $Al_2O_3$-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.