• 한국세라믹학회지
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• 제26권1호
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• pp.132-138
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• 1989

High purity(99.99%) spherical particles of hydrated Basic Aluminum Salts(BAS) were prepared by a homogeneous precipitation process utilizing the urea decomposition reaction and characterized by XRD, SEM, TG-DTA, IR and PSA methods. Amorphous hydrated BAS was precipitated in the range of pH 4~6. The molar ratio [Al3+]/[SO42-] for the precipitate particles was about 3.7. With increasing the concentration of aluminum sulfate the precipitation of the hydrated BAS occurred slowly and the precipitate particles with a narrow size distribution were fine(1-2${\mu}{\textrm}{m}$ in diameter). At temperatures in the range 400$^{\circ}$to 95$0^{\circ}C$, desulfurization and dehydroxylization resulted in weight loss with 22%. When the precipitate particles were thermally treated, the crystlline ${\gamma}$-Al2O3 was identifited by XRD at 50$0^{\circ}C$ and ${\gamma}$-Al2O3 particles were transformed into $\alpha$-Al2O3 at 100$0^{\circ}C$. A vermicular network was produced by calcining at 125$0^{\circ}C$ for 30min.

• 한국세라믹학회지
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• 제28권5호
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• pp.399-405
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• 1991

Mullite-PSZ powders were synthesized by the sol-gel process using Al(sec-OC4H9)3, Si(OC2H5)4, ZrOCl2$.$8H2O and YCl3 solution and the characteristics of synthesized powders were studied. The sinterability and mechanical properties of powder compacts sintered at 1670$^{\circ}C$ for 4hr were also studied for various PSZ contents. ${\gamma}$-Al2O3(Al-Si spinel) formed at 980$^{\circ}C$ from amorphous dried gel, and mullite as well as ZrO2 formed above 1200$^{\circ}C$. At the room temperature, ZrO2 was a mixture of tetragonal and monoclinic phases. The specimens were densified to 97∼98% except the specimen containing 25 vol% PSZ which showed the relative density of 94%. The K1c value increased with the PSZ content and showed a maximum value of 4.1 MN/m3/2 at 25 vol% PSZ; this value was about 50% higher than that of the mullite without PSZ. Flexural strength had a maximum value of 280 Mn/㎡ at 20 vol% PSZ. In contrast, at 25 vol%, the flexural strength was even lower than that of the mullite possibly due to higher porosity of 6%.

• 한국재료학회지
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• 제9권6호
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• pp.630-634
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• 1999

$Al(OH)_3$와 비정질 $SiO_2$를 출발원료로 사용하여 반응소결을 통한 다공성 뮬라이트를 제조하였다. $Al(OH)_3$와 $SiO_2$의 몰비를 뮬라이트의 화학양론적 조성과 실리카와 얄루미나가 많은 조성으로 변화시키고, 각 조성에 $AlF_3$를 0, 1, 5, 10wt% 첨가하여 뮬라이트의 생성에 미치는 조성과 첨가제의 영향을 살펴보았다. 첨가한 $AlF_3$의 양이 많아질수록 낮은 온도에서 뮬라이트가 생성됨을 보였고, 첨가된 $AlF_3$의 양이 5wt%인 경우, 화학량론적 뮬라이트 조성에서 율라이트가 $1250^{\circ}C$에서부터 생성되기 시작하였으 며 $1300^{\circ}C$ 이상 열처리한 경우 충분히 발달한 침상형의 다공성 뮬라이트가 합성되었다. $AlF_3$의 양이 5wt% 이상 첨가한 경우 열 처리 온도의 영향은 크게 나타나지 않았으며, 소성체의 수축도 거의 일어냐지 않았다.

• 한국세라믹학회지
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• 제28권5호
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• pp.365-372
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• 1991

LAS (lithium aluminosilicate) sol was synthesized using the hydrolysis-condensation reaction of TEOS, chelated Al(OBus)3 and Li-salt with H2O in alcohol (EtOH+2-Propanol) medium. Effects of important reaction parameters on the properties of sol and gel-derived LAS were examined. The crystallization of the sol-gel derived LAS with ${\beta}$-spodumene composition began at ∼600$^{\circ}C$, and a series of polymorphic transformations occurred as temperature was increased to 1100$^{\circ}C$: amorphous LAS\longrightarrowhexagonal LiAl(SiO3)2\longrightarrow${\beta}$-spodumene. Lowering Li content in the gel enhanced densification and retarded the crystallization significantly. Optimum reaction conditions of LAS sol formation for thin coating applications were derived from rheological measurements, and these can be summarized as: H2O/total alkoxides molar ratio=4, pH=∼2.5, and aging time of ∼250h.

• Bulletin of the Korean Chemical Society
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• 제33권4호
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• pp.1141-1146
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• 2012

Ce-doped $Y_3Al_5O_{12}$ (YAG:Ce) phosphor powder was prepared using a ${NO_3}^-$-malonic acid-$NH_4NO_3-NH_3{\cdot}H_2O$ system. The YAG:Ce precursor was ignited at $240^{\circ}C$ and the resulting powder contained YAG:Ce crystallites (42%) - active in the visible region at 460 nm - amorphous particles (53%) - inactive at visible wavelengths - and less than 3% oxide (3%) crystallite impurities. The impurities transformed to acitive YAG:Ce crystallites at above $800^{\circ}C$. At above $1000^{\circ}C$, the amorphous phase became YAG phase and isolated $Ce_2O$ crystallites emerged. The powder particles comprised < $4{\mu}m$ secondary aggregates of 20 nm primary particles. The thermal dusting of the secondary particles coincided with the aggregation of the secondary particles at above $900^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.75.2-75.2
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• 2010

We studied the fabrication of polycrystalline silicon (pc-Si) films as seed layers for application of pc-Si thin film solar cells, in which amorphous silicon (a-Si) films in a structure of glass/Al/$Al_2O_3$/a-Si are crystallized by the aluminum-induced layer exchange (ALILE) process. The properties of pc-Si films formed by the ALILE process are strongly determined by the oxide layer as well as the various process parameters like annealing temperature, time, etc. In this study, the effects of the oxide film thickness on the crystallization of a-Si in the ALILE process, where the thickness of $Al_2O_3$ layer was varied from 4 to 50 nm. For preparation of the experimental film structure, aluminum (~300 nm thickness) and a-Si (~300 nm thickness) layers were deposited using DC sputtering and PECVD method, respectively, and $Al_2O_3$ layer with the various thicknesses by RF sputtering. The crystallization of a-Si was then carried out by the thermal annealing process using a furnace with the in-situ microscope. The characteristics of the produced pc-Si films were analyzed by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer, and X-ray diffractometer (XRD). As results, the crystallinity was exponentially decayed with the increase of $Al_2O_3$ thickness and the grain size showed the similar tendency. The maximum pc-Si grain size fabricated by ALILE process was about $45{\mu}m$ at the $Al_2O_3$ layer thickness of 4 nm. The preferential crystal orientation was <111> and more dominant with the thinner $Al_2O_3$ layer. In summary, we obtained a pc-Si film not only with ${\sim}45{\mu}m$ grain size but also with the crystallinity of about 75% at 4 nm $Al_2O_3$ layer thickness by ALILE process with the structure of a glass/Al/$Al_2O_3$/a-Si.

• 한국재료학회지
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• 제2권1호
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• pp.3-11
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• 1992

점토 광물로부터 황산 처리법을 이용하여 수화 황산 알루미늄을 제조하였다. 하동 카올린 을 황산 처리하였을 때 수화 황산 알루미늄 형성에 미치는 카올린의 하소 온도와 하소 시간, 산처리 반응 온도와 반응 시간 및 황산의 농도의 영향을 조사하였다. 또한, 황산 처리된 용액으로부터 수화 황산 알루미늄이 석출되는 최적 조건을 구하였으며, 생성된 수화 황산 알루미늄을 상온에서 $1200^{\circ}C$ 까지 각각의 온도 구간에서 열처리한 분말에 대해서 XRD, TG-DTA, FT-IR, SEM, 입도 분석 및 불순물 분석을 하였다. 최적 조건 하에서, 카올린 중의 알루미나가 수화 황산 알루미늄으로 생성되는 전화율은 약 60%였고, XRD, TG-DTA, FT-IR 등의 분석 결과로 부터 생성된 수화 황산 알루미늄의 열분해 반응은 $Al_2(SO_4)_3{\cdot}18H_2O{\rightarrow}Al_2(SO_4)_3{\cdot}6H_2O{\rightarrow}Al_2(SO_4){\rightarrow}\;amorphous\;alumina{\rightarrow}{\gamma}-alumina{\rightarrow}{\delta}-alumina{\rightarrow}{\theta}-alumina{\rightarrow}{\alpha}-alumina$이었다. 또한 생성된 수화 황산 알루미늄을 $1200^{\circ}C$에서 하소 하여 얻은 알루미나 분말의 순도는 99.99%였다.

• 한국결정성장학회지
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• 제29권2호
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• pp.50-53
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• 2019

박막 태양전지에 주로 적용되는 다결정 규소층을 AIC(Aluminum Induced Crystallization) 공정을 이용하여 제조하였다. 결정립의 확대를 위하여 selective diffusion barrier 사용하였다. 이 diffusion barrier는 $Al_2O_3$ 막을 사용하였다. 공정시간의 단축을 위하여 열처리는 RTA(Rapid Thermal Annealing) 공정으로 진행하였다. 비정질 실리콘의 결정화는 XRD 측정을 통해 분석했다. 그 결과 $500^{\circ}C$에서 결정화되었으며, 결정 크기는 $15.9{\mu}m$로 계산되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• 한국표면공학회지
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• 제54권5호
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• pp.230-237
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• 2021

In this study, the influence of silicon contents on the microstructure, mechanical and tribological properties of Ti-Al-Si-N coatings were systematically investigated for application of cutting tools. The composition of the Ti-Al-Si-N coatings were controlled by different combinations of TiAl₂ and Ti₄Si composite target powers using an arc ion plating technique in a reactive gas mixture of high purity Ar and N₂ during depositions. Ti-Al-Si-N films were nanocomposite consisting of nanosized (Ti,Al,Si)N crystallites embedded in an amorphous Si₃N₄/SiO₂ matrix. The instrumental analyses revealed that the synthesized Ti-Al-Si-N film with Si content of 5.63 at.% was a nanocomposites consisting of nano-sized crystallites (5-7 nm in dia.) and a three dimensional thin layer of amorphous Si₃N₄ phase. The hardness of the Ti-Al-Si-N coatings also exhibited the maximum hardness value of about 47 GPa at a silicon content of ~5.63 at.% due to the microstructural change to a nanocomposite as well as the solid-solution hardening. The coating has a low friction coefficient of 0.55 at room temperature against an Inconel alloy ball. These excellent mechanical and tribological properties of the Ti-Al-Si-N coatings could help to improve the performance of machining and cutting tool applications.