• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2009년도 공동학술대회
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• pp.496-497
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• 2009

This paper describes about the realization of a remote RF sensor system and its applications. RF Sensor System was designed and realized on DSP over the range of high frequency such as about 200[KHz]. It should be "wireless", "implantable" and "batteryless". Futhermore, the system should be consist of passive components such as R, Land C. The measurement was given using the inductive coupling principle between primary source part and secondary sensor part. This newly developed parameter estimation system can be easily applied to the Ambient Intelligent System including the ubiquitous computing and the sensitive environmental changes.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.260-264
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• 2012

We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of IZO thin films intended for use as anode contacts in the organic light emitting diodes (OLED) devices. These IZO thin films were deposited on the PES film by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar + O2, and Ar + H2) at room temperature. In order to investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon has been changed from 0.1 sccm to 0.5 sccm, respectively. All the IZO thin film has an (222) preferential orientation regardless of ambient gases. The electrical resistivity of the IZO film increased with increasing O2 flow rate, whereas the electrical resistivity decreased sharply under an Ar + H2 atmosphere and was nearly similar regardless of the H2 flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made with the configuration of IZO/α-NPD/DPVB/Alq3/LiF/Al in order to elucidate the performance of the IZO substrate. The current density and the luminance of OLED devices with IZO thin films deposited in 0.5 sccm H2 ambient gas are the highest amongst all other films.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1134-1139
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• 2006

Electrical, optical, and structural properties of indium zinc oxide (IZO) anode films grown by a RF magnetron sputtering were investigated as functions of RF power and working pressure in pure Ar ambient. To investigate electrical, optical and structural properties of IZO anode films, 4-point probe and UV/VIS spectrometry, and X-ray diffraction (XRD) were performed, respectively. A sheet resistance of $15.2{\Omega}/{\square}$, average transmittance above 80 % in visible range, expecially above 85 % in 550 nm, and root mean square roughness of 1.13 nm were obtained from optimized IZO anode films grown in oxygen free ambient. All samples show amorphous structure regardless of RF power and working pressure due to low substrate temperature. In addition, XPS depth profile obtained from IZO/PES exhibits that there is no obvious evidence of interfacial reaction between IZO and PES substrate. Furthermore, current-voltage-luminance of the flexible phosphorescent flexible OLEDs fabricated on IZO anode shows dependence on sheet resistance of the IZO anode. These results indicate that the IZO anode is a promising candidate to substitute conventional ITO anode for high-quality flexible displays.

• 한국인터넷방송통신학회논문지
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• 제19권4호
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• pp.7-12
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• 2019

주변 후방산란 통신은 송신 전력효율 문제로 기존 RF통신에서 채널 추정방법인 파일럿(pilot) 신호를 통한 채널 추정기법이 제한된다. 제한된 송신 전력 환경에서 기존 주변 후방산란통신의 연구는 채널 상태로 인한 신호 변동을 고려하지 않은 이상적인 채널로 가정을 하고 연구되어 왔다. 본 논문은 주변 후방산란 통신 시스템에서 정규분포를 따르는 채널 상태인 주변 후방산란 통신 시스템에서 채널 추정 방법으로 블라인드 채널 추정기법 중 하나인 기댓값-최대화 알고리즘을 제안한다. 모의실험은 제안한 시스템 모델에서 기댓값-최대화 알고리즘과 추정값의 최소 분산을 나타내는 Bayesian Cramer-Rao 하한 경계를 이용하여 평균 제곱 오차(Mean Square Error, MSE)값이 하한 경계와 근접해 가는 것을 확인하고, 주변 후방산란 통신 시스템에서 채널 파라미터의 추정이 가능함을 증명한다.

• 한국재료학회지
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• 제13권10호
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• pp.640-644
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• 2003

NiCr thin films were fabricated by rf magnetron sputtering for applying to both the top electrode and absorption layer on Pb(Zr, Ti)O$_3$(PZT) thin films for infrared sensors. The rms roughness and resistivity of NiCr films prepared with Ni power of 80 W and Cr power of 50 W showed the most stable oxidation resistance after annealing at $600^{\circ}C$ for 5 min in oxygen ambient. The rms roughness and resistivity of NiCr films annealed at $V^{\circ}C$ in oxygen ambient were about 2$0\AA$ and $70 \mu$Ω-cm, respectively. As-deposited Ni/PZT/Pt and NiCr (Ni 80 W, Cr 50 W)/PZT/Pt structures showed well saturated hysteresis loops. However, in case of the samples annealed at $500^{\circ}C$ in oxygen ambient, only NiCr/PZT/Pt showed saturated loops having a remanent polarization of 20$\mu$C/$\textrm{cm}^2$. Ultra-thin NiCr films showed a possibility as a top electrode for infrared sensors.

• 한국전기전자재료학회논문지
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• 제22권4호
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• pp.318-322
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• 2009

In this paper, to establish growth technology of ZnO:Al thin films at low temperature applied to photoelectronic devices, ZnO:Al were prepared by RF magnetron sputtering on glass substrate at room temperature using different RF power with subsequent annealing process at different temperature in $H_2$ ambient. The resistivity of hydrogen-annealed ZnO:Al thin film at temperature of $300^{\circ}C$ was reduced to $8.32{\times}10^{-4}{\Omega}cm$ from $9.44{\times}10^{-4}{\Omega}cm$ which was optimal value for as-grown films. X-ray photoelectron spectroscopy(XPS) revealed that improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing process.

• 한국통신학회논문지
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• 제35권11A호
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• pp.1091-1096
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• 2010

Stiction in microelectromechanical systems (MEMS) has been a major failure mechanism. Especially, in RF MEMS switches, moving parts often suffered in-use and release related stiction problems. Some materials and methods have been used to prevent this problem. Diamond-like carbon (DLC) has not only been used as a protective material owing to its good mechanical properties but also has been used as a hydrophobic material. Its properties could be controlled by post annealing treatment in various conditions. We synthesized DLC films using a radio frequency plasma enhanced chemical vapor deposition (RF PECVD) method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas. Then, the change of the hydrophobic property of the films was investigated undervarious annealing temperatures in nitrogen and in oxygen ambient. The films, that were annealed above $700^{\circ}C$ in nitrogen ambient, showed a high contact angle of water (> $90^{\circ}$) even though their mechanical property was sacrificed to some degree. The structural variation and the changes of the hydrophobic and mechanical properties of the DLC films were analyzed by Raman spectrum, contact angle measurement, surface profiler, and a nanoindentation test.

• 한국위성정보통신학회논문지
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• 제10권3호
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• pp.6-10
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• 2015

무선 에너지 하비스팅 기술은 주로 무선 통신 네트워크에서 전력소모가 적은 무선 통신 장치들을 동작시키기 위해 주변 환경으로부터 RF 신호를 수집, 에너지로 변환하는 기술로 최근 각광을 받고 있다. 이와 같은 기술과 기존의 인지무선(Cognitive Radio) 네트워크 모델을 기반으로, 본 논문에서는 적은 파워 소비를 하는 2차 유저(Secondary User)가 근처에서 동작 중인 1차 유저(Primary User)의 특정 거리 안에 존재할 때 1차 유저가 전송한 통신 신호로부터 무선에너지 하비스팅을 하고 특정 거리 밖에 존재할 때 우선 사용자에게 할당되어 있는 허가대역을 주기적으로 센싱, 선택적으로 접근하는 무선에너지 하비스팅 인지무선 네트워크 모델을 제시한다. 이 때 1차 유저와 2차 유저는 Poisson pont process로 분포되어있고 통신을 하고 있는 수신자들과 일정한 거리로 떨어져있다. 위와 같은 네트워크 모델에서 주어진 여러 가지 조건하에 2차 유저 네트워크 처리량을 최대화할 수 있는 최적의 프레임 주기, 전송파워, 2차 유저 밀도 제안하고 앞으로의 연구방향을 제시한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.755-758
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• 2000

YMnO$_3$films have been deposited with different Rf powers of 60W, 80W, 100W, and 120W. The structural properties of YMnO$_3$films on Si(100) were analysed by XRD(X-ray diffraction). The c-axis oriented peaks of YMnO$_3$were observed deposited in YMnO$_3$/Si(100) structure of RF power at 87$0^{\circ}C$ in oxygen ambient, and the peaks were enlarged by increasing The RF powers. The dielectric constant of the film deposited at 100W and 120W of RF power were about 19, 20 respectively.

• 반도체디스플레이기술학회지
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• 제8권1호
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• pp.33-38
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• 2009

We have investigated the effect of the ambient gases on the characteristics of AZO thin films for the OLED (organic light emitting diodes) devices. These AZO thin films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at 300. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.2sccm to 1sccm and from 0.5sccm to 5sccm, respectively. The AZO thin films were preferred oriented to (002) direction regardless of ambient gases. The electrical resistivity of AZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while under Ar+$H_2$ atmosphere the electrical resistivity showed minimum value near 1sccm of $H_2$. All the films showed the average transmittance over 80% in the visible range. The OLED device was fabricated with different AZO substrates made by configuration of AZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of AZO substrate.