• Title/Summary/Keyword: aluminum-silicon system

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Development of ELID Monitoring System and its Application to ELID Grinding of Structural Ceramics (ELID 연삭 모니터링 시스템의 개발과 구조 세라믹스 적용 사례)

  • Kwak, Tae-Soo;Kim, Gyung-Nyun;Kwak, Ihn-Sil
    • Journal of the Korean Society for Precision Engineering
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    • v.30 no.12
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    • pp.1245-1251
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    • 2013
  • This study has focused on development of ELID monitoring system and its application to ELID grinding of structural ceramics. ELID monitoring system was consisted of grinding equipment, ELID power supply, grinding wheel, electrode and monitoring program. It can give a real time data to check spindle grinding resistance, wheel revolution, dressing current and voltage in ELID grinding process. The performance of developed system was evaluated by applying to grinding of structural ceramics, silicon carbide and alumina. As the results of experiments, monitored data for spindle resistance and ELID dressing current was useful to check steady-state ELID grinding process. From the comparison of spindle resistance between ELID grinding and conventional grinding process according to change of depth of cut, it could be confirmed that the spindle resistance in ELID grinding was lower than conventional grinding process.

A Measurement Apparatus of Lateral Restoring Force Exerted on Electrostatically Suspended Object (정전부상체에 작용하는 횡방향 복원력 측정장치)

  • Jeon Jong Up;Park Ki-Tae;Park Kyu-Yeol
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.2
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    • pp.60-69
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    • 2005
  • In electrostatic suspension system of thin plates like a silicon wafer or an aluminum disk for hard disk applications, the lateral restoring force exerted on a suspended object plays an important role since the lateral motion of the suspended object, owing to the inherently stable restoring forces, can be passively stabilized without any active control of it. This paper reports about the measurement apparatus of the lateral restoring force originating from a relative translation of the suspended object with respect to the electrodes-for-suspension. An approximate calculation of the lateral force in disk-shaped objects, the structure of the measurement apparatus, a measurement method, stabilization condition and the guideline in designing the measurement apparatus are described. Experimental results obtained by using a 3.5-inch aluminum disk as a suspended object are presented as well in order to assess the magnitude of lateral force and stiffness, and also verify the usefulness of the measurement apparatus.

Improved electrode pattern design for lateral force increase in electrostatic levitation system

  • Woo, Shao-Ju;Jeon, Jong-Up;higuchi, Toshiro
    • 제어로봇시스템학회:학술대회논문집
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    • 1996.10a
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    • pp.311-314
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    • 1996
  • In contactless disk handling systems based on electrostatic suspension in which the stator is to be transferred, the limited stiffness in lateral direction severely restricts the achievable translational acceleration. In existing stator electrode pattern designs, the magnitude of the lateral force is determined by the magnitude of the control voltages which are applied to the individual electrodes to levitate the disk stably. As a result, the lateral force cannot be set arbitrarily. A new stator electrode pattern is presented for the electrostatic levitation of disk-shaped objects, in particular silicon wafers and aluminum hard disks, which allows the lateral forces to be controlled independently from the levitation voltages. Therefore, greater lateral forces can be obtained, compared with the existing stator designs. Experimental results will be presented for a 4-inch silicon wafer that clearly reveal the increased lateral stiffness by using the proposed stator electrode compared to the conventional electrode pattern.

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Aluminum alloys and their joining methods (알루미늄 합금과 그 접합 방법)

  • Jung, Do-hyun;Jung, Jae Pil
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.2
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    • pp.9-17
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    • 2018
  • Aluminum (Al) and its alloys have been used widely in a variety of industries such as structural, electronic, aerospace, and particularly automotive industries due to their lightweight characteristic, outstanding ductility, formability, high oxidation and corrosion resistance, and high thermal and electrical conductivity. Al have different kinds of alloys according to the various additional elements system and they should be selected properly depending on their effectiveness and suitability for their particular purpose. The major elements for Al alloys are silicon (Si), magnesium (Mg), manganese (Mn), copper (Cu), and zinc (Zn). In order for Al alloys to use for each industry, it is necessary to study of Al to Al joining and/or the Al to dissimilar materials joining to combine the individual parts into one. Many studies on joining technologies about Al to Al and Al to dissimilar materials have been performed such as press joining, bolted joint, welding, soldering, riveting, adhesive bonding, and brazing. This study reviews a variety of Al alloys and their joining method including its principles and properties with recent trends.

Effect of Precipitation and Dissolution of Si on the Thermal Diffusivity in the Al-Si Alloy System (열처리를 통한 Si 고용 및 석출 반응이 Al-Si 합금의 열확산도에 미치는 영향)

  • Kim, Yumi;Kim, Youngchan;Choi, Seweon
    • Korean Journal of Materials Research
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    • v.30 no.9
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    • pp.474-479
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    • 2020
  • The effect of precipitation and dissolution of Si on the thermal diffusivity in the Al-Si alloy system is reported in this study and solution heat treatment followed by aging treatment is carried out to determine the effects of heat treatment on the thermal characteristics. The solution treatment is performed at 535 ℃ for 4 and 10 h and then the specimens are cooled by rapid quenching. The samples are aged at 300 ℃ for 4 h to precipitate Si solute. The addition of 9 wt% silicon contents makes the thermal diffusivity decrease from 78 to 74 mm/s2 in the cases of solid solution treated and quenched samples. After quenching and aging, the Si solute precipitates on the Al matrix and increases the thermal diffusivity compared with that after the quenched state. In particular, the increase of the thermal diffusivity is equal to 10 mm/s2 without relation to the Si contents in the Al-Si alloy, which seems to corresponded to solute amount of Si 1 wt% in the Al matrix.

A Study on the Manufacture of Aluminum Tie-Rod End by Casting/Forging Process (주조/단조 기술을 이용한 알루미늄 타이로드 엔드 제조에 관한 연구)

  • Kim, Hyo-Ryang;Seo, Myung-Kyu;You, Min-Su;Bae, Won-Byong
    • Journal of the Korean Society for Precision Engineering
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    • v.19 no.1
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    • pp.180-185
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    • 2002
  • Aluminum casting/forging process is used to produce an aluminum tie-rod end for the steering system of automobiles. Firstly, casting experiments were carried out to get a good preform for forging the tie-rod end. In the casting experiment, the effects of additives, Ti+B, Zr, Sr, and Mg, on the mechanical properties and the microstructure of a cast preform were investigated. And a finite element analysis was performed to determine an optimal configuration of the cast preform. Lastly, a forging experiment was carried out to make the final product of aluminum tie-rod end by using the above cast preform. In the casting experiments, when 0.2% Ti+B and 0.25% Zr were simultaneously added into molten Al-Si alloy, the highest values of tensile strength and elongation of the cast preform were obtained. When 0.04% Sr were added into the molten aluminum alloy, the finest silicon-structure was observed in the cast preform. The highest hardness was obtained when 0.2% Mg was added. In the forging experiment, It was confirmed that the optimal configuration of a cast preform predicted by FE analysis was very useful. The hardness of a cast/forged product using designed preform was superior to that of required specification.

Development of Force/Displacement Sensing System for Nanomachining (나노 가공을 위한 힘.변위 검출시스템 개발)

  • Bang, Jin-Hyeok;Kwon, Ki-Hwan;Park, Jae-Jun;Cho, Nahm-Gyoo
    • Proceedings of the KSME Conference
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    • 2004.11a
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    • pp.777-781
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    • 2004
  • This paper presents a force/displacement sensing system to measure penetration depths and machining forces during pattering operation. This sensing system consists of a leaf spring mechanism and a capacitive sensor, which is mounted on a PZT driven in-feed motion stage with 1nm resolution. The sample is moved by a xy scanning motion stage with 5nm resolution. The constructed system was applied to nano indentation experiments, and the load-displacement curves of silicon(111) and aluminum were obtained. Then, the indentation samples were measured by AFM. Experimental results demonstrated that the developed system has the ability of preforming force/depth sensing indentations

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Chip-scale Integration Technique for a Microelectromechnical System on a CMOS Circuit (CMOS 일체형 미세 기계전자시스템을 위한 집적화 공정 개발)

  • ;Michele Miller;Tomas G. Bifano
    • Journal of the Korean Society for Precision Engineering
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    • v.20 no.5
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    • pp.218-224
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    • 2003
  • This paper describes a novel MEMS integration technique on a CMOS chip. MEMS integration on CMOS circuit has many advantages in view of manufacturing cost and reliability. The surface topography of a CMOS chip from a commercial foundry has 0.9 ${\mu}{\textrm}{m}$ bumps due to the conformal coating on aluminum interconnect patterns, which are used for addressing each MEMS element individually. Therefore, it is necessary to achieve a flat mirror-like CMOS chip fer the microelectromechanical system (MEMS) such as micro mirror array. Such CMOS chip needs an additional thickness of the dielectric passivation layer to ease the subsequent planarization process. To overcome a temperature limit from the aluminum thermal degradation, this study uses RF sputtering of silicon nitride at low temperature and then polishes the CMOS chip together with the surrounding dummy pieces to define a polishing plane. Planarization reduces 0.9 ${\mu}{\textrm}{m}$ of the bumps to less than 25 nm.

Development of a Real-time Radiation Level Monitoring Sensor for Building an Underwater Radiation Monitoring System (수중 방사선 감시체계 구축을 위한 실시간 방사선 준위 모니터링 센서 개발)

  • Park, Hye Min;Joo, Koan Sik
    • Journal of Sensor Science and Technology
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    • v.24 no.2
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    • pp.96-100
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    • 2015
  • In the present study, we developed a real-time radiation-monitoring sensor for an underwater radiation-monitoring system and evaluated its effectiveness using reference radiation sources. The monitoring sensor was designed and miniaturized using a silicon photomultiplier (SiPM) and a cerium-doped-gadolinium-aluminum-gallium-garnet (Ce:GAGG) scintillator, and an underwater wireless monitoring system was implemented by employing a remote Bluetooth communication module. An acrylic water tank and reference radiation sources ($^{137}Cs$, $^{90}Sr$) were used to evaluate the effectiveness of the monitoring sensor. The underwater monitoring sensor's detection response and efficiency for gamma rays and beta particles as well as the linearity of the response according to the gammaray intensity were verified through an evaluation. This evaluation is expected to contribute to the development of base technology for an underwater radiation-monitoring system.

Characteristics on Silicon Oxynitride Stack Layer of ALD-Al2O3 Passivation Layer for c-Si Solar Cell (결정질 실리콘 태양전지 적용을 위한 ALD-Al2O3 패시베이션 막의 산화질화막 적층 특성)

  • Cho, Kuk-Hyun;Cho, Young Joon;Chang, Hyo Sik
    • Korean Journal of Materials Research
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    • v.25 no.5
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    • pp.233-237
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    • 2015
  • Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) $Al_2O_3$. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect $Al_2O_3$ passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD $Al_2O_3$ film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. $Al_2O_3$/SiON stacks coated at $400^{\circ}C$ showed higher lifetime values in the as-stacked state. In contrast, a high quality $Al_2O_3$/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of $200^{\circ}C$ after the firing process. The best lifetime was achieved with stack films fired at $850^{\circ}C$. These results demonstrated the potential of the $Al_2O_3/SiON$ passivated layer for crystalline silicon solar cells.