• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.365-366
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• 2005

PZT films are the most intensively investigated because PZT has advantages such as low processing temperature and large remnant values. In this paper, the microstructure and electric properties of $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ heterolayered thick films with Zr mole ranging from 30 to 70 % screen printed onto a alumina substrate were studied. $Pb(Zr_x,Ti_{(1-x)})O_3$ and $BaTiO_3$ powders were prepared by the sol-gel method. The $BaTiO_3$ powders were calcined at $700^{\circ}C$ for 2 hours. Structural properties of $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ multilayered thick films were investigated. As a result of the X-ray diffraction (XRD) analysis, $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ exhibited a perovskite polycrystalline phase without pyrochlore phase or any preferred orientation.

• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.948-952
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• 2001

PZT thick films were fabricated on alumina substrates by a screen printing method. They were sintered at $750^{\circ}C{\sim}1050^{\circ}C$ for 1 h under air or Pb atmosphere. Pyrochlore was observed as a second phase in PZT thick films sintered in air at temperatures of $950^{\circ}C$ and higher. PZT thick films sintered under Pb atmosphere showed denser microstructure, higher dielectric constant, and better-developed P-E hysteresis curve than the films sintered in air. PZT thick films sintered at $900^{\circ}C$ under Pb atmosphere showed the typical ferroelectric hysteresis with remanent polarization of $29.8{\mu}C/cm^2$ and coercive field of 48.4 kV/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.3
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• pp.170-174
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• 2015

Composite ceramics of alumina-TZP(3Y) have good mechanical and electrical properties. So, They have been used as high strength refractory materials and thick film substrates, etc. In this study, Composite ceramics of alumina-TZP(3Y) were fabricated by uniaxial pressing and sintering at 1,400, 1,500, and $1,600^{\circ}C$, and their microstructures and mechanical properties were investigated. As the TZP(3Y) content in composite ceramics increases from 20 wt.% to 80 wt.%, the fracture toughness increases monotonically, which seems to be related to the higher relative density and/or toughening mechanism by means of stabilized tetragonal zirconia phase at room temperature. In contrast to the fracture toughness, Vickers hardness of the composite ceramics shows maximum value (1,938 Hv) at a 40 wt.% of TZP(3Y). The result of Vickers hardness is likely to be due to more dense sintered microstructure of composite ceramics than pure alumina and reinforcement of composite ceramics with TZP(3Y), considering that Vickers hardness of pure $Al_2O_3$ is greater than that of TZP(3Y). It is also shown that the $ZrO_2$ particles are $l^{\circ}Cated$ between $Al_2O_3$ grains and suppress grain growth each other.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.63.1-63
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• 2003

Catalytic chemical vapor deposition (Cat-CVD) has been developed to deposit alumina(Al$_2$O$_3$) thin films on silicon (Si) crystal using N$_2$ bubbled tir-methyl aluminium [Al(CH$_3$)$_3$, TMA] and molecular oxygen (O$_2$) as source species and tungsten wires as a catalyzer. The catalyzer dissociated TMA at approximately 600$^{\circ}C$ The maximum deposition rate was 18 nm/min at a catalyzer temperature of 1000 and substrate temperature of 800$^{\circ}C$. Metal oxide semiconductor (MOS) diodes were fabricated using gates composed of 32.5-nm-thick alumina film deposited as a substrate temperature of 400oC. The capacitance measurements resulted in a relatively dielectric constant of 7, 4, fixed charge density of 1.74*10e12/$\textrm{cm}^2$, small hysteresis voltage of 0.12V, and very few interface trapping charge. The leakage current was 5.01*10e-7 A/$\textrm{cm}^2$ at a gate bias of 1V.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.912-918
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• 2002

Ni-Mn-Co-Fe oxide thick films were coated on an alumina substrate by screening printing technique. The microstructure and electrical properties of the thick films, as a function of composition and sintering temperature, were investigated. The components of the NTC thick films sintered at 1150${\circ}C$ were distributed homogeneously. On the other hand, in the case of the NTC thick films sintered at 1200 and 1250${\circ}C$, Co element was distributed homogeneously, but Ni, Mn and Fe elements were distributed heterogeneously, resulting in the formation of Ni rich and Mn-Fe rich regions. All the thick film NTC thermistors prepared showed a linear relationship between log resistance (log R) and the reciprocal of absolute temperature (1/T), indicative of NTC characteristics. At a given NiO and $Mn_3O_4$ content, the resistance, B constant and activation energy of $(Ni_{1.0}Mn_{1.0}Co_{1-x}Fe_x)O_4$ (0.25${\le}$x${\le}$0.75) and $(Ni_{0.75}Mn_{1.25}Co_{1-x}Fe_x)O_4$ (0.25${\le}$x${\le}$0.75) thermistors increased with increasing $Fe_2O_3$ content.

• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.454-460
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• 1999

$LaCoO_3$ thick-films for gas sensing layers were prepared on alumina substrate by screen printing method. The sensitivities to $C_4H_{10}$, $NH_3$, NO and CO gases were investigated for different heat treatment temperatures of the films. Their structural properties were examined by X-Ray Diffraction measurements and SEM photographs. The sensitivity of $LaCoO_3$ thick-film to CO gas was much higher than those of $C_4H_{10}$, $NH_3$, and NO gases. The optimal heat treatment and operating temperatures were $800^{\circ}C$ and $150^{\circ}C$, respectively. The sensitivities of $LaCoO_3$ thick-films to 500ppm and 1250ppm CO gas were 72% and 95%, respectively.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.408-411
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• 2010

Indium doped $SnO_2$ thick films for gas sensors were fabricated by a screen printing method on alumina substrates. The effects of indium concentration on the structural and morphological properties of the $SnO_2$ were investigated by X-ray diffraction and Scanning Electron Microscope. The structural properties of the $SnO_2$:In by X-ray diffraction showed a (110) dominant $SnO_2$ peak. The size of $SnO_2$ particles ranged from 0.05 to $0.1\;{\mu}m$, and $SnO_2$ particles were found to contain many pores, according to the SEM analysis. The thickness of the indium-doped $SnO_2$ thick films for gas sensors was about $20\;{\mu}m$, as confirmed by cross sectional SEM image. Sensitivity of the $SnO_2$:In gas sensor to 2000 ppm of $CO_2$ gas and 50 ppm of H2S gas was investigated for various indium concentrations. The highest sensitivity to $CO_2$ gas and H2S gas of the indium-doped $SnO_2$ thick films was observed at the 8 wt% and 4 wt% indium concentration, respectively. The good sensing performances of indium-doped $SnO_2$ gas sensors to $CO_2$ gas were attributed to the increase of oxygen vacancies and surface area in the $SnO_2$:In. The $SnO_2$:In gas sensors showed good selectivity to $CO_2$ gas.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.117-123
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• 1998

The $In_{2}O_{3}$ thin films were fabricated on a alumina substrate by spin-coating method and the gas sensing properties were tested. The coating solution was synthesized by the mixing of aqueous solution of $In(OH)_{3}$ and acetic acid, and ammonium carboxymethyl cellulose as a binder. The $In_{2}O_{3}$ thin films between 71 and 210nm thick were obtained by spin-coating between 1 and 7 times followed by drying at $110^{\circ}C$ and calcining at $600^{\circ}C$. The films consisted of a dense stack of tiny $In_{2}O_{3}$ particles between 23 and 27nm in diameter and covered well large grains of the alumina substrate. Then film thickness was well controlled by the number of spin-coating. The fabricated $In_{2}O_{3}$ films showed high sensitivity and very fast response property to CO and $H_{2}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.206-209
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• 1994

This paper has been researched bondability of electronic devices, such as lead frame and thick film of Ag/Pd on an alumina substrate by different heat sources. To obtain the bonds with high quality, it is very important to control both the thermal distribution of the bonds and it stability, because electronics components is consist of different materials. Therefore, this paper clarifies not only heat mechanism of micro parallel gap resistance bonding method and pulse heat tip bonding method but also investigates selection of heat sources with micro-electronic materials for bonding. Finally, it is realzed fluxless bonding process with filler metal such as plating layers.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1246-1247
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• 2008

With recent advanced in portable electric devices, wireless sensor, MEMS and bio-Mechanics device, the new typed power supply, not conventional battery but self-powered energy source is needed. Particularly, the system that harvests from their environments are interests for use in self powered devices. For very low powered devices, environmental energy may be enough to use power source. Therefore, in other to made piezoelectric energy harvesting device, PMN-PZT thick film was formed by the screen printing method on the Ag/Pd coated alumina substrate. The layer was 8 layers and slurry where a-terpineol, ethycellulose, ferro B-75001 as Vehicle, PMN-PZT powder used are fabricated by ball mill. The output power quality was be also investigated by changing the load resistance, weight and frequency. The made piezoelectric energy harvesting device was resulted from the conditions of 33$k{\Omega}$, 0.25g, 197Hz respectively. The thick film was prepared at the condition of 2.75Vrms, and its power was 230${\mu} W$ and its thickness was 56${mu}m$. The piezoelectric energy harvesting device output voltage was increased, when the load weight, load resistance was increasing and resonance frequency was diminishing. The other side, resonance frequency was diminished, when the weight was increasing. And output power was continuously it changed by load resistance, output voltage, weight and resonance frequency.