• Title/Summary/Keyword: aligned structure

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Novel offset gated poly-Si TFTs with folating sub-gate (부동 게이트를 가진 새로운 구조의 오프셋 다결정 실리콘 박막 트랜지스터)

  • 박철민;민병혁;한민구
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.7
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    • pp.127-133
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    • 1996
  • In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photoresist reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate form both sides of the main gate. The poly-Si channel layer below the offset oxide is protected form the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of oru new device is the offset region due to the offset oxide. our experimental reuslts show that the offset region, due to the photoresist reflow process, has been sucessfully obtained in order to fabricate the offset gated poly-Si TFTs. The maximum ON/OFF ratio occurs at the L$_{off}$ of 1.1${\mu}$m and exceeds 1X10$^{6}$.

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High Performance Azimuthaly Continuous Nematic Domain Mode for TFT-LCD application

  • Bae, Kwang-Soo;Gwag, Jin-Seog;Han, In-Young;Lee, You-Jin;Jin, Min-Young;Kim, Jae-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.306-309
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    • 2008
  • We proposed azimuthally continuous nematic domain mode characterized by a cone field induced from patterned electrode structure with a circular slit. This mode has good optical performances such as higher transmittance and wider viewing angle through decreasing the demerits caused by domain walls. We could confirm to these optical characteristics by the manufactured sample.

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Strategic Learning Organization in the Digital Era : The Case Study of D-Corporation

  • Yum, Ji-Hwan;Cho, Nam-Jae
    • Journal of Information Technology Applications and Management
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    • v.15 no.3
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    • pp.261-273
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    • 2008
  • The starting point of knowledge generation and management is the enhancement of learning capability and capacity of organizational members. Organizational change for learning environment should be aligned with the change of organizational strategy, structure and processes. The study employed action learning methodology to constitute learning organization processes. The treatment effect to institute learning organization has been successful thanks to the members' zeal and consensus to change the processes. However, not every learning team has been so successful. Some cases complained time consuming where others expect to be helpful for their incentives. The researchers concluded that the most important point for success of the learning organization project should be the support of top management.

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Fabrication of excimer laser annealed poly-Si thin film transistor using polymer substrates

  • Kang, Soo-Hee;Kim, Yong-Hoon;Han, Jin-Woo;Seo, Dae-Shik;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1162-1165
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    • 2006
  • In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly- Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ${\sim}30\;cm^2/Vs$, on/off ratio of $10^5$ and threshold voltage of 5 V.

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Selective Growth of Carbon Nanotubes and Its Electron Emission Properties

  • Ryu, Je-Hwang;Kim, Ki-Seo;Yu, Yi-Yin;Moon, Jong-Hyun;Park, Kyu-Chang;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1229-1232
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    • 2006
  • We have grown well-aligned carbon nanotube arrays on the selective areas by plasma enhanced chemical vapor deposition at the substrate temperature of $580\;^{\circ}C$. The selective areas for CNTs growth can be defined by photo lithography technology. The CNTs are uniformly grown on the areas regardless of island diameters. Electron emission currents were measured in a vacuum with a diode structure at room temperature. Uniform electron emission currents were achieved with $40\;{\mu}m$ island spacing with $5{\mu}m$ island diameter.

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LCD with Tunable Viewing Angle by Thermal Modulation of Optical Layer

  • Gwag, Jin-Seog;Lee, You-Jin;Han, In-Young;Yu, Chang-Jae;Kim, Jae-Hoon
    • Journal of Information Display
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    • v.10 no.1
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    • pp.19-23
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    • 2009
  • In this paper, we review the proposed liquid crystal display (LCD) with a tunable viewing angle consisting of a conventional liquid crystal display (LCD) panel and a thermally variable retardation layer (TVRL) characterized by uniformly aligned LC film with transparent indium-tin-oxide electrodes for Joule heating. In the TVRL, nematic phase is transitioned into isotropic by Joule heating. The numerical calculation showed that the intrinsic wide viewing angle was achieved at the isotropic phase of the TVRL by Joule heating, whereas the narrow viewing angle was obtained at the nematic phase of the TVRL. The simulated and experimental results of the proposed LCD show continuous and symmetrical viewing angle characteristics by tuning the retardation of TVRL using Joule heating. The structure of the viewing angle control proposed here is adoptable to all LCD modes with wide viewing angle characteristics.

The Formation and Phase Stability of Cobalt-aluminide(CoAl) Thin Films on GaAs

  • Ko, Dae-Hong;Robert Sinclair
    • The Korean Journal of Ceramics
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    • v.4 no.1
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    • pp.43-46
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    • 1998
  • We have investigated the formation and thermal stability of cobalt aluminide(CoAl) thin films on GaAs. In order to obtain cobalt-aluminide thin films, we deposited a multilayer of Co/Al on GaAs, and subsequently annealed the samples at 80$0^{\circ}C$ for 30 min. After annealing, single-phase cobalt aluminide was produced showing a flat and uniform interface with GaAs. which indicates that cobalt aluminide (CoAl) is thermally stable with GaAs. In addition, the adherence and mechanical properties of the as-deposited, and annealed Co/Al multilayer structure on GaAs are compatible with those required for device fabrication processes. The electrical property of the CoAl/GaAs contact shows rectifying characteristics, indicating that the diodes were usable as rectifying gate electrodes.

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Method of Beam Alignment with the Rotation Axis for Laser Fabrication of Micro Cylindrical Structures (레이저를 이용한 미세 원통 구조물 제조를 위한 빔과 회전축 정렬 방법)

  • 정성진;정성호;이선규
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.10a
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    • pp.1056-1060
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    • 1997
  • An optical technique to align the laser beam with the rotation axis of a cylindrical microstructure is developed for laser microfabrication. The sample surface is first set normal to the rotation axis by applying a simple reflection law of geometrical optics and then the laser beam is aligned with the rotation axis using translation stages with quadrant photodiodes. Principle and the configuration of the alignment technique are described. An application of the present technique to laser microstereolithography showed that it could be effectively used for fabrication of micro cylindrical structures.

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POLARIZATION OF FIR EMISSION FROM T TAURI DISKS

  • Cho, Jung-Yeon;Lazarian, A.
    • Journal of The Korean Astronomical Society
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    • v.40 no.4
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    • pp.113-118
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    • 2007
  • Recently far infra-red (FIR) polarization of the $850{\mu}m$ continuum emission from T Tauri disks has been detected. The observed degree of polarization is around 3 %. Since thermal emission from dust grains dominates the spectral energy distribution at the FIR regime, dust grains might be the cause of the polarization. We explore alignment of dust grains by radiative torque in T Tauri disks and provide predictions for polarized emission for disks viewed at different wavelengths and viewing angles. In the presence of magnetic field, these aligned grains produce polarized emission in infrared wavelengths. When we take a Mathis-Rumpl-Nordsieck-type distribution with maximum grain size of $500-1000{\mu}m$, the degree of polarization is around 2-3 % level at wavelengths larger than ${\sim}100{\mu}m$. Our study indicates that multifrequency infrared polarimetric studies of protostellar disks can provide good insights into the details of their magnetic structure.

10Gbit/s AlGaAs/GaAs HBT limiting amplifier (AlGaAs/GaAs HBT를 사용한 10Gbit/s 리미팅증폭기)

  • 곽봉신;박문수
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.7
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    • pp.15-22
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    • 1997
  • A 10Gbit/s limiting amplifier IC for optical transmission system was implemented with AlGaAs HBT (heterojunction bipolar transistor) technology. HBTs with 2x10.mu. $m^{2}$ and 6x20.mu. $m^{2}$ emitter size were used. The HBT structures are based on metal-organic chemical vapor deposition (MOCVD) epitxy and employ a mesa structure with self-aligned emitter/base and sidewall dielectric passivation. IC was designed to support differnetial input and output. Small signal performance of the packaged IC showed 26dB gain and $f_{3dB}$ of 8GHz. A single ouput has 800m $V_{p-p}$ swing with more than 26dB dynamic range. The performance of the limiting amplifier was verified through single mode fiber320km transmission link test.est.

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