• Title/Summary/Keyword: adaptive biasing

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A Power-Efficient CMOS Adaptive Biasing Operational Transconductance Amplifier

  • Torfifard, Jafar;A'ain, Abu Khari Bin
    • ETRI Journal
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    • v.35 no.2
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    • pp.226-233
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    • 2013
  • This paper presents a two-stage power-efficient class-AB operational transconductance amplifier (OTA) based on an adaptive biasing circuit suited to low-power dissipation and low-voltage operation. The OTA shows significant improvements in driving capability and power dissipation owing to the novel adaptive biasing circuit. The OTA dissipates only $0.4{\mu}W$ from a supply voltage of ${\pm}0.6V$ and exhibits excellent high driving, which results in a slew rate improvement of more than 250 times that of the conventional class-AB amplifier. The design is fabricated using $0.18-{\mu}m$ CMOS technology.

A Novel Adaptive Biasing Scheme for CMOS Op-Amps

  • Kurkure Girish;Dutta Aloke K.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.3
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    • pp.168-172
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    • 2005
  • In this paper, we present a new adaptive biasing scheme for CMOS op-amps. The designed circuit has been used in an Operational Transconductance Amplifier (OTA) with ${\pm}1$ V power supply, and it has improved the positive and negative slew rates from 2.92 V/msec to 1242 V/msec and from 1.56 V/msec to 133 V/msec respectively, while maintaining all the small-signal performance parameter values the same as that without adaptive biasing (as expected), however, there was a marginal decrease of the dynamic range. The most useful features of the proposed circuit are that it uses a very low number of components (thus not creating severe area penalty) and requires only 25 nW of extra stand-by power.

1.9-GHz CMOS Power Amplifier using Adaptive Biasing Technique at AC Ground

  • Kang, Inseong;Yoo, Jinho;Park, Changkun
    • Journal of information and communication convergence engineering
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    • v.17 no.4
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    • pp.285-289
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    • 2019
  • A 1.9-GHz linear CMOS power amplifier is presented. An adaptive bias circuit (ABC) that utilizes an AC ground to detect the power level of the input signal is proposed to enhance the linearity and efficiency of the power amplifier. The ABC utilizes the second harmonic component as the input to mitigate the distortion of the fundamental signal. The input power level of the ABC was detected at the AC ground located at the VDD node of the power amplifier. The output of the ABC was fed into the inputs of the power stage. The input signal distortion was mitigated by detecting the input power level at the AC ground. The power amplifier was designed using a 180 nm RFCMOS process to evaluate the feasibility of the application of the proposed ABC in the power amplifier. The measured output power and power-added efficiency were improved by 1.7 dB and 2.9%, respectively.

Integrated Rail-to-Rail Low-Voltage Low-Power Enhanced DC-Gain Fully Differential Operational Transconductance Amplifier

  • Ferri, Giuseppe;Stornelli, Vincenzo;Celeste, Angelo
    • ETRI Journal
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    • v.29 no.6
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    • pp.785-793
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    • 2007
  • In this paper, we present an integrated rail-to-rail fully differential operational transconductance amplifier (OTA) working at low-supply voltages (1.5 V) with reduced power consumption and showing high DC gain. An embedded adaptive biasing circuit makes it possible to obtain low stand-by power dissipation (lower than 0.17 mW in the rail-to-rail version), while the high DC gain (over 78 dB) is ensured by positive feedback. The circuit, fabricated in a standard CMOS integrated technology (AMS 0.35 ${\mu}m$), presents a 37 V/${\mu}s$ slew-rate for a capacitive load of 15 pF. Experimental results and high values of two quality factors, or figures of merit, show the validity of the proposed OTA, when compared with other OTA configurations.

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Design of a new adaptive circuit to compensate for aging effects of nanometer digital circuits (나노미터 디지털회로의 노화효과를 보상하기위한 새로운 적응형 회로 설계)

  • Kim, Kyung Ki
    • Journal of Korea Society of Industrial Information Systems
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    • v.18 no.6
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    • pp.25-30
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    • 2013
  • In nanoscale MOSFET technology, aging effects such as Negative Bias Temperature Instability(NBTI), Hot carrier Injection(HCI), Time Dependent Dielectric Breakdown (TDDB) and so on which affect circuit reliability can lead to severe degradation of digital circuit performance. Therefore, this paper has proposed the adaptive compensation circuit to overcome the aging effects of digital circuits. The proposed circuit deploys a power gating structure with variable power switch width and variable forward body-biasing voltage in order to adaptively compensate for aging induced performance degradation, and has been designed in 45nm technology.

Capacitor Ratio-Independent and OP-Amp Gain-Insensitive Algorithmic ADC for CMOS Image Sensor (커패시터의 비율과 무관하고 OP-Amp의 이득에 둔감한 CMOS Image Sensor용 Algorithmic ADC)

  • Hong, Jaemin;Mo, Hyunsun;Kim, Daejeong
    • Journal of IKEEE
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    • v.24 no.4
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    • pp.942-949
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    • 2020
  • In this paper, we propose an improved algorithmic ADC for CMOS Image Sensor that is suitable for a column-parallel readout circuit. The algorithm of the conventional algorithmic ADC is modified so that it can operate as a single amplifier while being independent of the capacitor ratio and insensitive to the gain of the op-amp, and it has a high conversion efficiency by using an adaptive biasing amplifier. The proposed ADC is designed with 0.18-um Magnachip CMOS process, Spectre simulation shows that the power consumption per conversion speed is reduced by 37% compared with the conventional algorithmic ADC.

Design of CMOS Op Amps Using Adaptive Modeling of Transistor Parameters

  • Yu, Sang-Dae
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.1
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    • pp.75-87
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    • 2012
  • A design paradigm using sequential geometric programming is presented to accurately design CMOS op amps with BSIM3. It is based on new adaptive modeling of transistor parameters through the operating point simulation. This has low modeling cost as well as great simplicity and high accuracy. The short-channel dc, high-frequency small-signal, and short-channel noise models are used to characterize the physical behavior of submicron devices. For low-power and low-voltage design, this paradigm is extended to op amps operating in the subthreshold region. Since the biasing and modeling errors are less than 0.25%, the characteristics of the op amps well match simulation results. In addition, small dependency of design results on initial values indicates that a designed op amp may be close to the global optimum. Finally, the design paradigm is illustrated by optimizing CMOS op amps with accurate transfer function.

Non-parametric Adaptive Importance Sampling for Fast Simulation Technique (속산 시뮬레이션을 위한 적응형 비모수 중요 샘플링 기법)

  • 김윤배
    • Journal of the Korea Society for Simulation
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    • v.8 no.3
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    • pp.77-89
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    • 1999
  • Simulating rare events, such as probability of cell loss in ATM networks, machine failure in highly reliable systems, requires huge simulation efforts due to the low chance of occurrence. Importance Sampling (IS) has been applied to accelerate the occurrence of rare events. However, it has a drawback of effective biasing scheme to make the estimator of IS unbiased. Adaptive Importance Sampling (AIS) employs an estimated sampling distribution of IS to the system of interest during the course of simulation. We propose Nonparametric Adaptive Importance Sampling (NAIS) technique which is nonparametrical version of AIS. We test NAIS to estimate a probability of rare event in M/M/1 queueing model. Comparing with classical Monte Carlo simulation, the computational efficiency and variance reductions gained via NAIS are substantial. A possible extension of NAIS regarding with random number generation is also discussed.

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A CMOS Voltage Driver for Voltage Down Converter (전압 강하 변환기용 CMOS 구동 회로)

  • 임신일;서연곤
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.25 no.5B
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    • pp.974-984
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    • 2000
  • A CMOS voltage driver circuit for voltage down converter is proposed. An adaptive biasing technique is used to enhance load regulation characteristics. The proposed driver circuit uses the NMOS transistor as a driving transistor, so it does not suffer from large Miller capacitances which is one of the problems with conventional PMOS driving transistor, and hence achieves good phase margin and stable frequency response. No additional complex circuit for frequency compensation such as compensation capacitor is required in this implementation. For the same current capability, the size of NMOS transistor in driver circuit is smaller than that of PMOS counterpart. So the smaller die area can be achieved. The circuits is implemented using a 0.8 ${\mu}{\textrm}{m}$ CMOS process and has a die area of 150 ${\mu}{\textrm}{m}$ x 360 ${\mu}{\textrm}{m}$. Proposed circuit has a quiescent power of 60 . In the current driving range from 100 $mutextrm{A}$ to 50 ㎃, load regulation of 5.6 ㎷ is measured.

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A New Fast Simulation Technique for Rare Event Simulation

  • Kim, Yun-Bae;Roh, Deok-Seon;Lee, Myeong-Yong
    • Proceedings of the Korea Society for Simulation Conference
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    • 1999.04a
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    • pp.70-79
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    • 1999
  • Importance Sampling (IS) has been applied to accelerate the occurrence of rare events. However, it has a drawback of effective biasing scheme to make the estimator from IS unbiased. Adaptive Importance Sampling (AIS) employs an estimated sampling distribution of IS to the systems of interest during the course of simulation. We propose Nonparametric Adaptive Importance Sampling (NAIS) technique which is nonparametrically modified version of AIS and test it to estimate a probability of rare event in M/M/1 queueing model. Comparing with classical Monte Carlo simulation, the computational efficiency and variance reductions gained via NAIS are substantial. A possible extension of NAIS regarding with random number generation is also discussed.

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