• 제목/요약/키워드: activation annealing

검색결과 159건 처리시간 0.038초

비질량 분리 이온 질량 주입법으로 도핑시킨 다결정 박막의 도판트 활성화 거동 (Phenomenal study on the dopant activation behavior in polysilicon thin films doped by non-mass separated ion mass doping technique)

  • 윤진영;최덕균
    • 한국결정성장학회지
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    • 제7권1호
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    • pp.143-150
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    • 1997
  • 본 연구는 수소로 희석된 $B_2H_6$를 도판트 소스 가스로 사용하여 이온 질량 주입(ion mass doping)을 하였을 때 다결정 박막의 전기적 특성과 도판트의 활성화시 방사 손상(radiation damage)의 효과에 대하여 고찰하였다. 다결정 박막에서 보론(boron)의 SIMS 분석과 컴퓨터 시뮬레이션인 TRIM92를 비교해서 가장 주입 확률이 높은 이온의 종류는 $B_2H_x\;^+$(x=1, 2, 3‥‥) 형태의 분자 이온임을 알았다. 높은 에너지의 질량 이온 주입 결과 시간에 따라 변화하는 비정질화된 층의 분율이 다결정 박막 내에 연속적인 비정질 충으로 존재하였다. 주입 이온의 질량 분리가 일어나지 않는 이온 질량 주입법(ion mass doping technique)에 의해 비정질화는 유발된다. 손상된 시편의 중간 열처리 온도 범위에서 도판트 활성화 거동과 역 열처리(reverse annealing) 효과가 관찰되었다. 이와 같은 연구의 결과 p-채널 다결정 박막 트랜지스터의 오프 스테이트(off-state) 전류는 방사 손상(radiation damage)에 의존한다.

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Implant Anneal Process for Activating Ion Implanted Regions in SiC Epitaxial Layers

  • Saddow, S.E.;Kumer, V.;Isaacs-Smith, T.;Williams, J.;Hsieh, A.J.;Graves, M.;Wolan, J.T.
    • Transactions on Electrical and Electronic Materials
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    • 제1권4호
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    • pp.1-6
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    • 2000
  • The mechanical strength of silicon carbide dose nor permit the use of diffusion as a means to achieve selective doping as required by most electronic devices. While epitaxial layers may be doped during growth, ion implantation is needed to define such regions as drain and source wells, junction isolation regions, and so on. Ion activation without an annealing cap results in serious crystal damage as these activation processes must be carried out at temperatures on the order of 1600$^{\circ}C$. Ion implanted silicon carbide that is annealed in either a vacuum or argon environment usually results in a surface morphology that is highly irregular due to the out diffusion of Si atoms. We have developed and report a successful process of using silicon overpressure, provided by silane in a CAD reactor during the anneal, to prevent the destruction of the silicon carbide surface, This process has proved to be robust and has resulted in ion activation at a annealing temperature of 1600$^{\circ}C$ without degradation of the crystal surface as determined by AFM and RBS. In addition XPS was used to look at the surface and near surface chemical states for annealing temperatures of up to 1700$^{\circ}C$. The surface and near surface regions to approximately 6 nm in depth was observed to contain no free silicon or other impurities thus indicating that the process developed results in an atomically clean SiC surface and near surface region within the detection limits of the instrument(${\pm}$1 at %).

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상압 플라즈마를 이용한 고속 실리콘 웨이퍼 직접접합 공정 (High Speed Direct Bonding of Silicon Wafer Using Atmospheric Pressure Plasma)

  • 차용원;박상수;신호준;김용택;이정훈;서일웅;좌성훈
    • 마이크로전자및패키징학회지
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    • 제22권3호
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    • pp.31-38
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    • 2015
  • 본 연구에서는 실리콘 웨이퍼의 고속 직접접합 공정을 위하여 상압 플라즈마와 함께 에어로젤 형태의 초순수 분사를 이용하여 표면처리 활성화 및 결함이 없는 실리콘 직접접합 공정을 개발하였다. 플라즈마 공정의 다양한 인자, 즉 $N_2$ 가스의 유량, CDA(clean dry air)의 유량, 플라즈마 헤드와 기판 간의 간격, 플라즈마의 인가전압이 플라즈마 활성화, 즉 친수화 처리에 미치는 영향을 접촉각 측정을 통하여 관찰하였다. 또한 열처리 온도 및 열처리 시간이 접합 강도에 미치는 영향을 연구하였으며, 접합 강도의 측정은 crack opening 방법을 이용하였다. 접합 강도가 제일 높은 최적의 열처리 조건은 $400^{\circ}C$의 열처리 온도 및 2 시간의 열처리 시간이었다. 플라즈마 스캔 속도 및 스캔 횟수를 실험계획법을 이용하여 최적화한 결과, 스캔 속도는 30 mm/sec, 스캔 횟수는 4 회에서 최적의 접합 강도를 나타내고 있었다. 열처리 조건과 플라즈마 활성화 조건을 최적화 한 후 직접접합을 하여 적외선투과현미경 등을 이용하여 관찰한 결과, 접합된 웨이퍼에서 접합 공정으로 인한 공극이나 결함은 관찰되지 않았다. 접합된 웨이퍼의 접합 강도는 평균 $2.3J/m^2$의 접합 강도를 나타내고 있었다.

Oxygen이 주입된 $p^+$-InGaAs층에서의 compensation 특성 (The characteristics of $p^+$-InGaAs layer implanted with oxygen)

  • 시상기;김성준
    • 한국진공학회지
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    • 제6권4호
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    • pp.343-347
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    • 1997
  • 전기적 고립(isolation) 효과를 알아보기 위해 $P^+$-InGaAs층에 oxygen을 이온 주입하 여 annealing 온도에 따른 compensation mechnism을 조사하였다. $500^{\circ}C$이하에서는 전도도 가 손상에 관련된 트랩들에 의해 지배되며 500~$600^{\circ}C$영역에서는 oxygen의 활성화로 acceptor를 compensate시키는 화학적 효과를 나타냈으며 특히 $600^{\circ}C$에서 type conversion(p $\longrightarrow$n-type)이 일어났다. 이는 annealing온도가 증가함에 따라 oxygen의 화학적 작용에 의해 생성된 donor로 작용하는 결함들의 증가에 기인하며, 이때 면 저항의 활성화 에너지는 24.2meV로 shallow donor로 작용하는 In interstitial과 같은 native defect들이 형성되기 때 문이라 생각된다. Type conversion이 일어난 $600^{\circ}C$ 이상의 영역에서는 이온 주입에 의해 형 성된 interstitial Be의 재활성화로 인해 n형 전도도가 감소하는 경향을 보였다.

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TFT-LCDs에 적용 가능한 Cu-Ag 박막에 대한 Mo 기판 위에서의 특성조사 (Characteristic of Cu-Ag Added Thin Film on Molybdenum Substrate for an Advanced Metallization Process)

  • 이현민;이재갑
    • 한국재료학회지
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    • 제16권4호
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    • pp.257-263
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    • 2006
  • We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.

NH3 분위기에서 후속 열처리에 의한 p형 ZnO 형성 (Formation of N Doped, p-type ZnO Films by Post-annealing in NH3 Ambient)

  • 정은수;김홍승;조형균
    • 한국전기전자재료학회논문지
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    • 제19권7호
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    • pp.611-617
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    • 2006
  • We report the preparation of N doped, p-type ZnO films by post-annealing in $NH_3$ ambient. The properties were examined by XRD, Hall-effect measurement, PL, and SIMS. ZnO films showed better crystallinity and electron concentration of $10^{15}-10^{17}/cm^3$ with post-annealing in $NH_3$ ambient. These films were converted to p-type ZnO by activation thermal annealing process at $800^{\circ}C$ under $N_2$ ambient. The electrical properties of the p-type ZnO showed a hole concentration of $1.06\times10^{16}/cm^3$, a mobility of $15.8cm^2/V{\cdot}s$, and a resistivity of $40.18\Omega{\cdot}cm$. The N doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO:N. In the SIMS spectra, the incorporation of nitrogen was confirmed.

실리콘 박막에서 이온 질량 도핑에 의해 주입된 인의 전기적 활성화에 관한 연구 (A study on the electrical activation of ion mass doped phosphorous on silicon films)

  • 김진호;주승기;최덕균
    • 전자공학회논문지A
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    • 제32A권1호
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    • pp.179-184
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    • 1995
  • Phosphorous was deped in silicon thin films by Ion Mass Doping and Changes in the electrical resistance with respect tko heat treatments were investigated. SOI(Silicon On Insulator) thin films which contain few grain boundaries prepared by ZMR(Zone Melting Recrystallization) of polysilicon films, polysilicon films which have about 1500 $A^{\rarw}$ of grain size prepared by LPCVD at 625.deg. C, and amorphous silicon thin films prepared by LPCVD at low temperature were used as substrates and thermal behavior of phosphorous after RTA(Rapid Thermal Annealing) and furnace annealing was carefully studied. Amorphous thin films showed about 10$^{6}$ .OMEGA./ㅁbefore any heat treatment, while polycrystalline and SOI films about 10$^{3}$.OMEGA./¤. All these films, however, showed about 10.OMEGA./ㅁafter furnace annealing at 700.deg. C for 3hrs and RTA showed about the same trend. Films with grain boundaries showed a certain range of heat treatment which rendered increase of the electrical resistance upon annealing, which could not be observed in amorphous films and segregation of doped phosphorous by diffusion with annealing was thought to be responsible for this abnormal behavior.

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Hydrothermal Growth and Characteristics of ZnO Nanorods on R-plane Sapphire Substrates

  • 김민수;김소아람;남기웅;박형길;윤현식;임재영
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2012년도 춘계학술발표회 논문집
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    • pp.236-237
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    • 2012
  • ZnO nanorods were grown on R-plane sapphire substrates with the seed layers annealed at different temperature. The effects of annealing temperature for the seed layers on the properties of the ZnO nanorods were investigated by scanning electron microscopy, X-ray diffraction, UV-visible spectroscopy, and photoluminescence. For the as-prepared seed layers, the ZnO nanorods and the ZnO nanosheets were observed. Only the ZnO nanorods were grown as the annealing temperature was above $700^{\circ}C$. The optical transmittance in the UV region was almost zero while that in the visible region was gradually increased as the annealing temperature increased to $700^{\circ}C$. The optical band gap of the ZnO nanorods was increased as the annealing temperature increased to $700^{\circ}C$. In the visible region, the refractive index was decreased with increasing the wavelength, and the extinction coefficient was decreased as the annealing temperature increased to $700^{\circ}C$. The non-linear exciton radiative life time of the FX emission peak was established by cubic equation. The values of Varshni's empirical equation fitting parameters were ${\alpha}=4{\times}10^{-3}eV/K$, ${\beta}=1{\times}10^4K$, and $E_g(0)=3.335eV$ and the activation energy was found to be about 94.6 meV.

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급속 열처리 온도에 따른 자발 형성된 InAs 양자점의 구조 및 광학 특성 (Structural and Optical Properties of Self-assembled InAs Quantum Dots as a Function of Rapid Thermal Annealing Temperature)

  • 조신호
    • 한국재료학회지
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    • 제16권3호
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    • pp.183-187
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    • 2006
  • We present the effects of rapid thermal annealing (RTA) temperature on the structural and optical properties of self-assembled InAs quantum dot (QD) structures grown on GaAs substrates by molecular beam epitaxy (MBE). The photoluminescence (PL) measurements are performed in a closed-cycle refrigerator as a function of temperature for the unannealed and annealed samples. RTA at higher temperature results in the increase in island size, the corresponding decrease in the density of islands, and the redshift in the PL emission from the islands. The temperature dependence of the PL peak energy for the InAs QDs is well expressed by the Varshni equation. The thermal quenching activation energies for the samples unannealed and annealed at $600^{\circ}C$ are found to be $25{\pm}5meV$ and $47{\pm}5$ meV, respectively.

실리콘에 MaV로 이온주입된 인의 결함분포와 profile에 관한 연구 (A Study of defect distribution and profiles of MeV implanted phosphorus in silicon)

  • 정원채
    • E2M - 전기 전자와 첨단 소재
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    • 제10권9호
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    • pp.881-888
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    • 1997
  • This study demonstrats the profiles of phosphorus ions in silicon by MeV implantation(1∼3 MeV). Implanted profiles could be measured by SIMS(Cameca 4f) and compared with simulation results(TRIM program and analytical description method only using on Pearson function). The experimental result in the peak concentration region has a little bit deviation from simulation data. By RBS and Channeling measurements the defect distribution of implanted samples could be measured and spectrum are calibrated depth with RUMP simulation By XTEM measurement the thickness of defect zone also could be measured. Finally thermal annealing for the electrical activation of implanted ions carried out by RTA(rapid thermal annealing). The concentration-depth profiles after heat treatment was measured by SR(spreading resistance)-method.

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