• 한국표면공학회지
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• 제40권3호
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• pp.138-143
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• 2007

The effects of texturing and anti-reflection coating on the reflection properties of multi-crystalline silicon solar cell have been investigated. The chemical solutions of alkaline and acidic etching solutions were used for texturing at the surface of multi-crystalline Si wafer. Experiments were performed with various temperature and time conditions in order to determine the optimized etching condition. Alkaline etching solution was found inadequate to the texturing of multi-crystalline Si due to its high reflectance of about 25%. The reflectance of Si wafer texturing with acidic etching solution showed a very low reflectance about 10%, which was attributed to the formation of homogeneous. Also, deposition of ITO anti-reflection coating reduced the reflectance of multi-crystalline si etched with acidic solution($HF+HNO_3$) to 2.6%.

• 한국표면공학회지
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• 제49권3호
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• pp.301-306
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• 2016

The effects of nanotexturing and post-etching on the reflection and quantum efficiency properties of diamond wire sawn (DWS) multicrystalline silicon (mc-Si) solar cell have been investigated. The chemical solutions, which are acidic etching solution (HF-$HNO_3$), metal assisted chemical etching (MAC etch) solutions ($AgNO_3$-HF-DI, HF-$H_2O_2$-DI) and post-etching solution (diluted KOH at $80^{\circ}C$), were used for micro- and nano-texturing at the surface of diamond wire sawn (DWS) mc-Si wafer. Experiments were performed with various post-etching time conditions in order to determine the optimized etching condition for solar cell. The reflectance of mc-Si wafer texturing with acidic etching solution showed a very high reflectance value of about 30% (w/o anti-reflection coating), which indicates the insufficient light absorption for solar cell. The formation of nano-texture on the surface of mc-Si contributed to the enhancement of light absorption. Also, post-etching time condition of 240 s was found adequate to the nano-texturing of mc-Si due to its high external quantum efficiency of about 30% at short wavelengths and high short circuit current density ($J_{sc}$) of $35.4mA/cm^2$.

• 한국표면공학회지
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• 제49권3호
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• pp.231-237
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• 2016

This article reports a new chemical bath for preparing a mirror-like surface of AZ31 Mg alloy. In order to find an appropriate chemical polishing solution, four different acidic solutions of sulphuric acid, nitric acid, acetic acid and a specially designed mixture of nitric acid and acetic acid were investigated in view of the changes in surface appearance, roughness and dissolution rate of AZ31 Mg alloy. The surface scales on AZ31 Mg alloy were readily removed by all the acidic solutions, but a reflective surface was produced only by etching in the specially designed solution, and only after a specific etching time. The surface roughness increased with etching time in sulphuric acid, nitric acid, and acetic acid, but it lowered after a specific etching time in the specially designed mixture of nitric acid and acetic acid. Dissolution rate of the alloy in the specially designed mixture of nitric acid and acetic acid appeared to be more than twice than that in separate nitric acid or acetic acid. In this work, we recommend the mirror-like surface of AZ31 Mg alloy obtained by polishing for an optimum time in a mixture of nitric acid and acetic acid for following surface finishings, chemical conversion coating, electroplating, electrophoretic painting and anodizing treatment.

• 멤브레인
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• 제23권1호
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• pp.92-99
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• 2013

본 연구는 인쇄회로기판(PCB) 제조 시 에칭공정에서 발생되는 구리이온($Cu^{+2}$)을 고농도로 함유한 황산 폐에칭액을 NF 막분리법을 사용하여 에칭액 회수와 구리이온 처리를 효율적으로 수행하기 위한 NF 막여과 공정의 운전 조건을 설정하기 위한 기본 자료를 확보하는데 있다. 이를 위해 미국 Koch사의 SelRO MPS-34 4040 NF 막을 대상으로 구리이온을 고농도(5~25 g/L)로 함유한 모의 황산 폐에칭액의 회분식(dead-end) 나노여과 실험을 수행하여 투과 플럭스와 구리이온의 총괄 배제도를 측정하였다. 이 결과 황산용액에의 막 보관기간이 길수록, 황산용액의 pH가 낮을수록 황산에 의한 NF 막의 손상이 더 크게 발생하여 순수 투과 플러스가 증가하였다. 황산 폐에칭액의 투과 플럭스는 황산용액 내 구리이온의 농도가 증가할수록 막 표면에의 구리이온 농축(농도분극)의 증가에 따라 감소하였으며, 구리이온의 배제도는 구리이온의 농도가 높을수록, pH가 낮을수록, 황산용액 내의 막 보관기간이 길수록 낮아져 초기 37%에서 최소 15% 수준으로까지 감소하였다.

• Carbon letters
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• 제13권1호
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• pp.44-47
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• 2012

We analyzed the effect of etchants for metal catalysts in terms of the characteristics of resulting graphene films, such as sheet resistance, hall mobility, transmittance, and carrier concentration. We found the residue of $FeCl_3$ etchant degraded the sheet resistance and mobility of graphene films. The residue was identified as an iron oxide containing a small amount of Cl through elemental analysis using X-ray photoelectron spectroscopy. To remove this residue, we provide an alternative etching solution by introducing acidic etching solutions and their combinations ($HNO_3$, HCl, $FeCl_3$ + HCl, and $FeCl_3+HNO_3$). The combination of $FeCl_3$ and acidic solutions (HCl and $HNO_3$) resulted in more enhanced electrical properties than pure etchants, which is attributed to the elimination of left over etching residue, and a small amount of amorphous carbon debris after the etching process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.319.1-319.1
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• 2016

Recently, the Al-doped ZnO (ZnO:Al) films are intensively used in thin film a-Si solar cell applications due to their high transmittance and good conductivity. The textured ZnO:Al films are used to enhance the light trapping in thin film solar cells. The wet etch process is used to texture ZnO:Al films by dipping in diluted acidic solutions like HCl or HF. During that process the glass substrate could be damaged by the acidic solution and it may be difficult to apply it for the inline mass production process since it has to be done outside the chamber. In this paper we report a new technique to control the surface morphology of RF-sputtered ZnO:Al films. The ZnO:Al films are textured with vaporized HF formed by the mixture of HF and H2SiO3 solution. Even though the surface of textured ZnO:Al films by vapor etching process showed smaller and sharper surface structures compared to that of the films textured by wet etching, the haze value was dramatically improved. We achieved the high haze value of 78% at the wavelength of 540 nm by increasing etching time and HF concentration. The haze value of about 58% was achieved at the wavelength of 800 nm when vapor texturing was used. The ZnO:Al film texture by HCl had haze ratio of about 9.5 % at 800 nm and less than 40 % at 540 nm. In addition to low haze ratio, the texturing by HCl was very difficult to control etching and to keep reproducibility due to its very fast etching speed.

• 한국세라믹학회지
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• 제46권6호
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• pp.685-688
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• 2009

Surface Texturing is very important process for high cell efficiency in crystalline silicon solar cell. Anisotropic texturing with an alkali etchant was known not to be able to produce uniform surface morphology in multi-crystalline silicon (mc-Si), because of its different etching rate with random crystal orientation. In order to reduce surface reflectance of mc-Si wafer, the general etching tendency was studied with HF/HN$O_3$/De-ionized Water acidic solution. And the surface structures of textured mc-Si in various HF/HN$O_3$ ratios were compared. The surface morphology and reflectance of textured silicon wafers were measured by FE-SEM and UVvisible spectrophotometer, respectively. We obtained average reflectance of $16{\sim}19$% for wavelength between 400 nm and 900 nm depending on different etching conditions.

• 멤브레인
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• 제19권4호
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• pp.317-323
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• 2009

본 연구는 전자 및 반도체 산업의 각종 에칭공정에서 발생되는 중금속 함유 산성 폐에칭액을 NF 막분리법을 이용하여 에칭액 회수와 중금속 처리를 효율적으로 수행하기 위한 NF 막공정의 운전조건을 설정하기 위한 기본 자료를 확보하는데 있다. 이를 위해 3가지 종류의 상용 NF 막(General Electric Co. Duraslick NF-4040 막, Dow Co. Filmtec LP-4040 막 및 Koch Co. SelRO MPS-34 4040 막)을 대상으로 $Pb^{+2}$ 중금속을 함유한 모의 질산 폐에칭액의 회분식(dead-end) 막여과 실험을 수행하여 폐에칭액의 투과 플럭스와 $Pb^{+2}$ 중금속 이온의 총괄 배제도를 측정하여 폐에칭액 처리에 우수한 NF 막을 선정하였다. 실험결과 질산용액에의 막 보관기간이 길수록, 질산용액의 pH가 낮을수록 산에 의한 막의 손상이 심해졌으며, 질산에 의한 막의 손상은 SelRO MPS-34 4040 < Duraslick NF-4040 < Filmtec LP-4040 막의 순서로 심하게 일어났다. 또한 질산용액에의 막 보관기간이 길수록, 질산용액의 pH가 낮을수록 $Pb^{+2}$ 이온의 배제도가 낮아졌으며, 배제도 값은 Duraslick NF-4040 막의 경우에는 95% 수준의 초기 배제도 값에서 질산용액에의 4달 보관 후에는 20% 수준으로, SelRO MPS-34 4040 막의 경우에는 초기 85% 수준에서 4달 후 65% 수준으로, Filmtec LP-4040 막의 경우에는 초기 90% 수준에서 4달 후 10% 이하 수준으로까지 감소하였다. 3종류의 상용 NF 막 중 내산성 용도로 개발된 SelRO MPS-34 4040 막이 중금속 함유 산성 폐에칭액의 재생에 가장 적합하였다.

• 전기학회논문지
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• 제56권8호
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• pp.1436-1440
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• 2007

Beryllium copper has been known to be an important material for the various fields of industry because it can be used for mechanical and electrical/electronic components that are subjected to elevated temperatures (up to $400^{\circ}C$ for short times). Blade type tip for probing the cells of liquid crystal display(LCD) was fabricated using beryllium copper foil. The dry film resist was employed as a mask for patterning of the blade type tip. The beryllium copper foil was etched using hydrochloric acidic iron-chloride solution. The concentration, temperature, and composition ratio of hydrochloric acidic iron-chloride solution affect the etching characteristics of beryllium copper foil. Nickel with the thickness of $3{\mu}m$ was electroplated on the patterned copper beryllium foil for enhancing its hardness, followed by electroplating gold for increasing its electrical conductivity. Finally, the dry film resist on the bridge was removed and half of the nickel was etched to complete the blade type tip.

• 대한소아치과학회지
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• 제35권2호
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• pp.216-224
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• 2008

자가 산부식 접착제는 산부식 과정 후 수세없이 와동을 충전할 수 있다. 움직임이 많고 행동 조절이 어려운 환자의 경우 시술의 절차를 줄일 수 있는 자가 산부식 접착제가 치면열구전색제의 사용을 보다 용이하게 할 수 있다. 그러나 법랑질에 대한 산부식 능력이 인산에 비해 낮아서 충분한 부식이 일어나는지에 대해 논란이 되고 있다. 이에 대해 자가 산부식 접착제의 약한 산부식능을 감안하여 열구성형술과 acidic primer의 도포 시간을 증가시키는 등의 임상 술식을 시행하고 자가 산부식 접착제의 단점이 보완되는지를 알아보고자 하였다. 35% 인산으로 산부식 후 전색술을 시행한 경우와 자가 산부식 접착제를 사용하여 도포한 경우의 미세 누출도를 염색액의 침투도를 비교하고 주사전자현미경을 이용한 산부식상 관찰을 통하여 다음과 같은 결론을 얻었다. 1. 열구 성형술을 시행 후 자가산부식접착제를 도포한 군은 인산 부식 20초를 시행한 군과 자가산부식접착제를 20초, 40초 도포한 군보다 미세누출도가 더 낮았다. 2. 자가산부식접착제를 제조 회사의 지시에 따라 20초간 도포한 군과 40초로 늘려 도포한 군 간에 미세누출도의 유의차가 없었다. 3. 주사전자현미경 관찰 시 전형적인 산부식 양상은 인산부식 20초군에서만 관찰되었으며 열구성형술을 시행하고 자가산부식접착제를 도포한 군이 자가산부식접착제만 20, 40초 도포한 군보다는 표면 거칠기가 증가하였다.