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Korean Carbon Society (한국탄소학회)
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Characterization of chemical vapor deposition-grown graphene films with various etchants

  • Choi, Hong-Kyw (Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute and Advanced Device Technology Major, University of Science and Technology) ;
  • Kim, Jong-Yun (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology) ;
  • Jeong, Hu-Young (Central Research Facilities, Ulsan National Institute of Science and Technology) ;
  • Choi, Choon-Gi (Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute and Advanced Device Technology Major, University of Science and Technology) ;
  • Choi, Sung-Yool (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology)
  • Received : 2011.08.31
  • Accepted : 2011.12.07
  • Published : 2012.01.31
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Abstract

We analyzed the effect of etchants for metal catalysts in terms of the characteristics of resulting graphene films, such as sheet resistance, hall mobility, transmittance, and carrier concentration. We found the residue of $FeCl_3$ etchant degraded the sheet resistance and mobility of graphene films. The residue was identified as an iron oxide containing a small amount of Cl through elemental analysis using X-ray photoelectron spectroscopy. To remove this residue, we provide an alternative etching solution by introducing acidic etching solutions and their combinations ($HNO_3$, HCl, $FeCl_3$ + HCl, and $FeCl_3+HNO_3$). The combination of $FeCl_3$ and acidic solutions (HCl and $HNO_3$) resulted in more enhanced electrical properties than pure etchants, which is attributed to the elimination of left over etching residue, and a small amount of amorphous carbon debris after the etching process.

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References

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